Sheng-Shiuan Yeh

1/f noise in micrometer-sized ultrathin indium tin oxide films

We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1/f law in the frequency range f ≈ 0.1–20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries.

Two-channel Kondo effects in Al/AlO(x)/Sc planar tunnel junctions

We have measured the differential conductances

Probing nanocrystalline grain dynamics in nanodevices

G(V,T)

Structural order and melting of a quasi-one-dimensional electron system

in several

Ultralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Silicon

\text{Al}/{\text{AlO}}_{x}/\text{Sc}

Electrical Transport in Transparent Conducting Tin‐doped Indium Oxide Films

planar tunnel junctions between 2 and 35 K. As the temperature decreases to

Electron-phonon-impurity interference effect in disordered Au56Pd44 and IrO2 thick films

\ensuremath{\sim}16\text{ }\text{K}

Conductivity and tunneling density of states in granular Cr films

, the zero-bias conductance

Negative correlation between charge carrier density and mobility fluctuations in graphene

G(0,T)

Activation Energy Distribution of Dynamical Structural Defects in RuO2 Films

crosses over from a standard