Shawna M. Hollen

Observation of giant positive magnetoresistance in a Cooper pair insulator.

Ultrathin amorphous Bi films, patterned with a nanohoneycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs (CP) of electrons between localized states. Here, we show that the magnetoresistance (MR) of this Cooper pair insulator (CPI) phase is positive and grows exponentially with decreasing temperature T, for T well below the pair formation temperature. It peaks at a field estimated to be sufficient to break the pairs and then decreases monotonically into a regime in which the film resistance assumes the T dependence appropriate for weakly localized single electron transport. We discuss how these results support proposals that the large MR peaks in other unpatterned, ultrathin film systems disclose a CPI phase and provide new insight into the CP localization.

Cooper-pair insulator phase in superconducting amorphous Bi films induced by nanometer-scale thickness variations

Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed to the formation of inhomogeneous phases. Difficulty correlating the behaviors with observations of the inhomogeneities make these connections uncertain. Of primary interest here are proposals that insulating films near the IST, which show an activated resistance and giant positive magnetoresistance, contain islands of Cooper Pairs (CPs). Here we present evidence that these types of inhomogeneities are essential to such an insulating phase in amorphous Bi (a-Bi) films deposited on substrates patterned with nanometer-sized holes. The patterning induces film thickness variations, and corresponding coupling constant variations, that transform the composition of the insulator from localized electrons to CPs. Analyses near the thickness-tuned ISTs of films on nine different substrates show that weak links between SC islands dominate the transport. In particular, the ISTs all occur when the link resistance approaches the resistance quantum for pairs. These observations lead to a detailed picture of CPs localized by spatial variations of the superconducting coupling constant.

Collapse of the Cooper pair phase coherence length at a superconductor-to-insulator transition

We present investigations of the superconductor to insulator transition (SIT) of uniform a-Bi films using a technique sensitive to Cooper pair phase coherence. The films are perforated with a nanohoneycomb array of holes to form a multiply connected geometry and subjected to a perpendicular magnetic field. Film magnetoresistances on the superconducting side of the SIT oscillate with a period dictated by the superconducting flux quantum and the areal hole density. The oscillations disappear close to the SIT critical point to leave a monotonically rising magnetoresistance that persists in the insulating phase. These observations indicate that the Cooper pair phase coherence length, which is infinite in the superconducting phase, collapses to a value less than the interhole spacing at this SIT. This behavior is inconsistent with the gradual reduction of the phase coherence length expected for a bosonic, phase fluctuation driven SIT. This result starkly contrasts with previous observations of oscillations persisting in the insulating phase of other films implying that there must be at least two distinct classes of disorder tuned SITs.

Disorder influences the quantum critical transport at a superconductor-to-insulator transition

We isolated flux disorder effects on the transport at the critical point of the quantum magnetic field tuned Superconductor to Insulator transition (BSIT). The experiments employed films patterned into geometrically disordered hexagonal arrays. Spatial variations in the flux per unit cell, which grow in a perpendicular magnetic field, constitute flux disorder. The growth of flux disorder with magnetic field limited the number of BSITs exhibited by a single film due to flux matching effects. The critical metallic resistance at successive BSITs grew with flux disorder contrary to predictions of its universality. These results open the door for controlled studies of disorder effects on the universality class of an ubiquitous quantum phase transition.

Modification of Electronic Surface States by Graphene Islands on Cu(111)

We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using \emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of image potential states is shifted toward lower energy over the graphene islands relative to Cu(111), indicating a decrease in the local work function, and the resonances have a much smaller linewidth, indicating reduced coupling to the bulk. In addition, we show the dispersion of the occupied Cu(111) Shockley surface state is influenced by the graphene layer, and both the band edge and effective mass are shifted relative to bare Cu(111).

Impact of vacancies on electronic properties of black phosphorus probed by STM

Black phosphorus (BP) is receiving significant attention because of its direct 0.4–1.5 eV layer-dependent bandgap and high mobility. Because BP devices rely on exfoliation from bulk crystals, there is a need to understand the native impurities and defects in the source material. In particular, samples are typically p-doped, but the source of the doping is not well understood. Here, we use scanning tunneling microscopy and spectroscopy to compare the atomic defects of BP samples from two commercial sources. Even though the sources produced crystals with an order of magnitude difference in impurity atoms, we observed a similar defect density and level of p-doping. We attribute these defects to phosphorus vacancies and provide evidence that they are the source of p-doping. We also compare these native defects to those induced by air exposure and show that they are distinct and likely more important for the control of electronic structure. These results indicate that impurities in BP play a minor role compared to vacancies, which are prevalent in commercially available materials, and call for better control of vacancy defects.Black phosphorus (BP) is receiving significant attention because of its direct 0.4–1.5 eV layer-dependent bandgap and high mobility. Because BP devices rely on exfoliation from bulk crystals, there is a need to understand the native impurities and defects in the source material. In particular, samples are typically p-doped, but the source of the doping is not well understood. Here, we use scanning tunneling microscopy and spectroscopy to compare the atomic defects of BP samples from two commercial sources. Even though the sources produced crystals with an order of magnitude difference in impurity atoms, we observed a similar defect density and level of p-doping. We attribute these defects to phosphorus vacancies and provide evidence that they are the source of p-doping. We also compare these native defects to those induced by air exposure and show that they are distinct and likely more important for the control of electronic structure. These results indicate that impurities in BP play a minor role compare...

Driving a Superconductor to Insulator Transition with Random Gauge Fields

Typically the disorder that alters the interference of particle waves to produce Anderson localization is potential scattering from randomly placed impurities. Here we show that disorder in the form of random gauge fields that act directly on particle phases can also drive localization. We present evidence of a superfluid bose glass to insulator transition at a critical level of this gauge field disorder in a nano-patterned array of amorphous Bi islands. This transition shows signs of metallic transport near the critical point characterized by a resistance , indicative of a quantum phase transition. The critical disorder depends on interisland coupling in agreement with recent Quantum Monte Carlo simulations. We discuss how this disorder tuned SIT differs from the common frustration tuned SIT that also occurs in magnetic fields. Its discovery enables new high fidelity comparisons between theoretical and experimental studies of disorder effects on quantum critical systems.

Cooper pair insulator phase induced in amorphous Pb0.9Bi0.1 thin films

Abstract A Cooper pair insulator (CPI) phase emerges near the superconductor–insulator transitions of a number of strongly-disordered thin film systems. Much recent study has focused on a mechanism driving the underlying Cooper pair localization. We present data showing that a CPI phase develops in amorphous Pb 0.9 Bi 0.1 films deposited onto nano-porous anodized aluminum oxide surfaces just as it has been shown to develop for a-Bi films. This result confirms the assertion that this CPI phase emerges due to the structure of the substrate. It supports the picture that nanoscale film thickness variations induced by the substrate drive the localization. Moreover, it implies that the CPI phase can be induced in any superconducting material that can be deposited onto this surface.