Shengwu Chang

Medium Energy High Dose Ion Implanter

The fabrication of Power Switching Devices (IGBT, MOSFET, BCD) requires Ion Implants in the Medium Energy Range (70-200keV) and at high doses (>1E15 Ion/cm2) . These Medium Energy High Dose (MEHD) implants have traditionally been supported by stationary spot beam spinning disk batch tools on 200mm (and smaller) substrates. Power Device Manufacturers are increasingly migrating to Single Wafer tools and 300mm substrates for increased performance, more accurate angle control, productivity and lower cost of ownership. Currently, the MEHD dose/energy space is not well supported by Single Wafer 300mm tools. The Varian Business Unit of Applied Materials has developed a Medium Energy High Dose Ion Implanter based on the VIISta Medium Current Architecture to address this need. Modifications to the Medium Current VIISta Architecture will be discussed. Overall system productivity and process results will be presented.

High energy hydrogen and helium ion implanter

High energy hydrogen and helium ion implants are required for enhancing performance of advanced power devices, such as improving breakdown voltage and switching response for IGBT products. The Varian Semiconductor Equipment business unit of Applied Materials has employed the VIISta platform architecture to provide production level throughputs of high energy hydrogen and helium for both standard and thin wafer substrates. Improvements to the implanter architecture will be described. The beam optics optimization, including the charge-exchange resonance and light species transport, will be discussed. The design and implementation of the radiation mitigation system, which meets industry standards for radiation limits and allows for operation in a typical production environment, will be described. Overall productivity and thin wafer implant capability are presented.

Varian semiconductor indirectly heated cathode sources

Indirectly heated cathode ion sources have been developed for the VIISta 3000 and 810HP series ion implanters. The sources greatly increase lifetime and maintain or improve beam current output for all species and charge states. The sources are designed with common consumables. Source lifetime, beam current, stability, and tuning data are presented.