Shengyong Qin

Superconductivity at the Two-Dimensional Limit

Superconducting Limits An electron wave function extends in three dimensions. Pairing up into Cooper pairs and reducing the temperatures can induce superconductivity in a material. How robust is an inherently three-dimensional effect when the dimensions are restricted? Qin et al. (p. 1314, published online 30 April) looked at the thickness dependence of superconductivity in thin lead films. In contrast to earlier, less direct measurements, superconductivity was robust, even down to films of only two monolayers. Superconductivity persists in lead films down to just two monolayers thick. Superconductivity in the extreme two-dimensional limit is studied on ultrathin lead films down to two atomic layers, where only a single channel of quantum well states exists. Scanning tunneling spectroscopy reveals that local superconducting order remains robust until two atomic layers, where the transition temperature abruptly plunges to a lower value, depending sensitively on the exact atomic structure of the film. Our result shows that Cooper pairs can still form in the last two-dimensional channel of electron states, although their binding is strongly affected by the substrate.

Room‐Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots

One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

Quantum size effects on the work function of metallic thin film nanostructures

In this paper, we present the direct observation of quantum size effects (QSE) on the work function in ultrathin Pb films. By using scanning tunneling microscopy and spectroscopy, we show that the very existence of quantum well states (QWS) in these ultrathin films profoundly affects the measured tunneling decay constant κ, resulting in a very rich phenomenon of “quantum oscillations” in κ as a function of thickness, L, and bias voltage, Vs. More specifically, we find that the phase of the quantum oscillations in κ vs. L depends sensitively upon the bias voltage, which often results in a total phase reversal at different biases. On the other hand, at very low sample bias (|Vs| < 0.03 V) the measurement of κ vs. L accurately reflects the quantum size effect on the work function. In particular, the minima in the quantum oscillations of κ vs. L occur at the locations where QWS cross the Fermi energy, thus directly unraveling the QSE on the work function in ultrathin films, which was predicted more than three decades ago. This further clarifies several contradictions regarding the relationship between the QWS locations and the work function.

Correlating Electronic Transport to Atomic Structures in Self-Assembled Quantum Wires

Quantum wires, as a smallest electronic conductor, are expected to be a fundamental component in all quantum architectures. The electronic conductance in quantum wires, however, is often dictated by structural instabilities and electron localization at the atomic scale. Here we report on the evolutions of electronic transport as a function of temperature and interwire coupling as the quantum wires of GdSi(2) are self-assembled on Si(100) wire-by-wire. The correlation between structure, electronic properties, and electronic transport are examined by combining nanotransport measurements, scanning tunneling microscopy, and density functional theory calculations. A metal-insulator transition is revealed in isolated nanowires, while a robust metallic state is obtained in wire bundles at low temperature. The atomic defects lead to electron localizations in isolated nanowire, and interwire coupling stabilizes the structure and promotes the metallic states in wire bundles. This illustrates how the conductance nature of a one-dimensional system can be dramatically modified by the environmental change on the atomic scale.

Ferroelectric Gated Electrical Transport in CdS Nanotetrapods

Complex nanostructures such as branched semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we report on the electrical transport properties of individual CdS tetrapods in a field effect transistor (FET) configuration with a ferroelectric Ba(0.7)Sr(0.3)TiO(3) film as high-k, switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods at different temperatures. A p-type field effect is observed at room temperature, owing to the enhanced gate capacitance coupling. And the reversible remnant polarization of the ferroelectric gate dielectric leads to a well-defined nonvolatile memory effect. The field effect is shown to originate from the channel tuning in the arm/core/arm junctions of nanotetrapods. At low temperature (8.5 K), the nanotetrapod devices exhibit a ferroelectric-modulated single-electron transistor (SET) behavior. The results illustrate how the characteristics of a ferroelectric such as switchable polarization and high dielectric constant can be exploited to control the functionality of individual three-dimensional nanoarchitectures.

Nanomanipulation and nanofabrication with multi-probe scanning tunneling microscope: From individual atoms to nanowires

The wide variety of nanoscale structures and devices demands novel tools for handling, assembly, and fabrication at nanoscopic positioning precision. The manipulation tools should allow for in situ characterization and testing of fundamental building blocks, such as nanotubes and nanowires, as they are built into functional devices. In this paper, a bottom-up technique for nanomanipulation and nanofabrication is reported by using a 4-probe scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM). The applications of this technique are demonstrated in a variety of nanosystems, from manipulating individual atoms to bending, cutting, breaking carbon nanofibers, and constructing nanodevices for electrical characterizations. The combination of the wide field of view of SEM, the atomic position resolution of STM, and the flexibility of multiple scanning probes is expected to be a valuable tool for rapid prototyping in the nanoscience and nanotechnology.

Nanochannel-Directed Growth of Multi-Segment Nanowire Heterojunctions of Metallic Au1–xGex and Semiconducting Ge

We report on the synthesis of multi-segment nanowire (NW) junctions of Au(1-x)Ge(x) and Ge inside the nanochannels of porous anodic aluminum oxide template. The one-dimensional heterostructures are grown with a low-temperature chemical vapor deposition process, assisted by electrodeposited Au nanowires (AuNWs). The Au-catalyzed vapor-liquid-solid growth process occurs simultaneously in multiple locations along the nanochannel, which leads to multi-segment Au(1-x)Ge(x)/Ge heterojunctions. The structures of the as-grown hybrid NWs, analyzed by using transmission electron microscopy and energy-dispersive X-ray spectroscopy elemental mapping, show clear compositional modulation with variable modulation period and controllable junction numbers. Remarkably, both GeNW and Au(1-x)Ge(x)NW segments are single crystalline with abrupt interfaces and good crystallographic coherences. The electronic and transport properties of individual NW junctions are measured by using a multi-probe scanning tunneling microscope, which confirms the semiconducting nature of Ge segments and the metallic behavior of Au(1-x)Ge(x) segments, respectively. The high yield of multiple segment NW junctions of a metal-semiconductor can facilitate the applications in nanoelectronics and optoelectronics that harness multiple functionalities of heterointerfaces.

Compact low temperature scanning tunneling microscope with in-situ sample preparation capability

We report on the design of a compact low temperature scanning tunneling microscope (STM) having in-situ sample preparation capability. The in-situ sample preparation chamber was designed to be compact allowing quick transfer of samples to the STM stage, which is ideal for preparing temperature sensitive samples such as ultra-thin metal films on semiconductor substrates. Conventional spring suspensions on the STM head often cause mechanical issues. To address this problem, we developed a simple vibration damper consisting of welded metal bellows and rubber pads. In addition, we developed a novel technique to ensure an ultra-high-vacuum (UHV) seal between the copper and stainless steel, which provides excellent reliability for cryostats operating in UHV. The performance of the STM was tested from 2 K to 77 K by using epitaxial thin Pb films on Si. Very high mechanical stability was achieved with clear atomic resolution even when using cryostats operating at 77 K. At 2 K, a clean superconducting gap was observed, and the spectrum was easily fit using the BCS density of states with negligible broadening.

Contacting nanowires and nanotubes with atomic precision for electronic transport

Making contacts to nanostructures with atomic precision is an important process in the bottom-up fabrication and characterization of electronic nanodevices. Existing contacting techniques use top-down lithography and chemical etching, but lack atomic precision and introduce the possibility of contamination. Here, we report that a field-induced emission process can be used to make local contacts onto individual nanowires and nanotubes with atomic spatial precision. The gold nano-islands are deposited onto nanostructures precisely by using a scanning tunneling microscope tip, which provides a clean and controllable method to ensure both electrically conductive and mechanically reliable contacts. To demonstrate the wide applicability of the technique, nano-contacts are fabricated on silicide atomic wires, carbon nanotubes, and copper nanowires. The electrical transport measurements are performed in situ by utilizing the nanocontacts to bridge the nanostructures to the transport probes.

Adsorbate-induced restructuring of Pb mesas grown on vicinal Si(111) in the quantum regime

Using scanning tunneling microscopy and spectroscopy, we demonstrate that the adsorption of a minute amount of Cs on a Pb mesa grown in the quantum regime can induce dramatic morphological changes in the mesa, characterized by the appearance of populous monatomic-layer-high Pb nanoislands on top of the mesa. The edges of the Pb nanoislands are decorated with Cs adatoms, and the nanoislands preferentially nucleate and grow on the quantum mechanically unstable regions of the mesa. Furthermore, first-principles calculations within density-functional theory show that the Pb atoms forming these nanoislands were expelled by the adsorbed Cs atoms via a kinetically accessible place-exchange process when the Cs atoms alloyed into the top layer of the Pb mesa.