Shi-ng Li

Optical properties of stoichiometric LiNbO3 waveguides formed by low-dose oxygen ion implantation

The planar waveguides in z-cut stoichiometric LiNbO3 crystal have been fabricated by 3.0 MeV oxygen ion implantation with the dose of 6×1014ions∕cm2 at room temperature. The modes of the waveguides were measured by the prism-coupling method with the wavelength 633 and 1539 nm, respectively. The refractive index profiles of the waveguides were reconstructed using reflectivity calculation method. The Rutherford backscattering/channeling technique was used to investigate the damage produced by the ion implantation, the minimum yield of the spectra was 4.52%. The propagation loss of waveguide was 0.61 dB/cm obtained by fiber probe technique. It was found that positive changes of extraordinary refractive indices happened in the guiding regions, and such change increased after the annealing treatment at 260 °C for 60 min.

Monomode optical waveguide excited at 1540 nm in LiNbO(3) formed by MeV carbon ion implantation at low doses.

The monomode enhanced-index LiNbO(3) waveguide excited at 1540 nm is reported. X-cut LiNbO(3) crystals were implanted at room temperature by 6.0 MeV C(3+) ions with a dose of 2.0x10(15) ions/cm(2). Low loss planar optical waveguides were obtained and characterized by the prism coupling technique. Four dark modes were observed for extraordinary light at 633 nm, while only one enhanced-index mode was observed at 1540 nm. The propagation loss of the waveguide is 1.01 dB/cm measured with the moving fiber method. Reflectivity calculation method (RCM) was applied to simulate the refractive index profiles in waveguide. The width of waveguide structure induced by carbon ion implantation is ~3.6 microm.

Low-loss optical planar waveguides in YVO4 produced by silicon ion implantation at low doses

Planar waveguides in x-cut YVO4 crystals were produced by ion-implanted Si+ ions with energies from 2.6 to 3.0 MeV at doses of 1×1013−1.5×1014 ions/cm2. The number of propagation modes varied from 1 to 3 as the doses of the implanted ions increased. The effective refractive indices of all the observed waveguide modes were higher than the refractive index of the substrate, which meant an index-enhanced guiding layer with thickness of ∼2 μm formed to confine the light propagation. The minimum propagation loss of the measured YVO4 waveguide was 0.27 dB/cm after annealing under suitable conditions.

Formation of waveguides by implantation of 3.0MeV Ni2

3.0MeV Ni2+ in the beam doses from 1×1013to9×1014ions∕cm2 are implanted into LiNbO3 single crystals at room temperature. After 300°C annealing for 30min in air ambient, dark mode measurement is done by the prism-coupling technique. Waveguides from both raised extraordinary index layer and barrier-confined are formed by low and high beam dose implantation, respectively. In the samples implanted by mediate beam doses, a phenomenon of “missing mode” is observed. The experimental results are analyzed and compared with the simulated results from a theoretical model, which is based on the assumption that the change of index induced by implantation is mainly governed by degradation of polarization and reduction of material density. With a fiber probe, the waveguide loss from single transverse magnetic mode is measured, which is about 3dB∕cm.

Optical planar waveguide fabricated in Nd:LuVO4 crystal by MeV oxygen implantation.

We report the first time optical planar waveguide fabricated in vanadate laser crystal Nd:LuVO4 by 3.0 MeV oxygen ion implantation with the dose of 6x1014 ions/cm2 at room temperature. After the implantation, an enhanced ordinary refractive index region was formed with a width of about 2.1 microm beneath the sample surface to act as a waveguide structure. The modes were observed at 633 nm, while only one mode was observed at 1539 nm after annealing at 300 degrees C for 60 min in air. The changes of ordinary refractive index in the guiding region were about 4.42% and 4.07% before and after annealing.

Property studies of optical waveguide formed by 6.0 MeV carbon ion implantation into Nd:silicate glass

Nd:silicate glass was implanted at room temperature by 6.0 MeV C3+ ions with a dose of 2.0 x 10(15) ions cm(-2). A waveguide with thickness of about 6.3 mu m was formed. The prism-coupling method was used to observe the dark modes of the waveguide at 633 nm and 1539 nm, respectively. There are three dark modes at 633 nm, of which one is the enhanced-index mode. The propagation loss of the enhanced-index mode in the waveguide measured at 633 nm is 0.42 dB cm(-1) after annealing at 217 degrees C for 35 min. The reflectivity calculation method was applied to simulate the refractive index profiles in the waveguide. The mode optical near-field output at 633 nm was presented.