Shiang Fang

Tuning the Kosterlitz-Thouless transition to zero temperature in anisotropic boson systems

This work is supported by NSC grants and also NCTS. M.A.C. gratefully acknowledges the hospitality of NCTS (Taiwan) and the financial support of the Spanish MEC through Grant No. FIS2010-19609-C02-02.

High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Greens functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e. WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analyzed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low subthreshold swings (<5 mV/decade) and I ON/I OFF ratios higher than 108 at a supply voltage of 0.3 V, making them ideal for ultra-low power consumption.

Enhanced Superconductivity and Suppression of Charge-density Wave Order in 2H-TaS 2 in the Two-dimensional Limit

As superconductors are thinned down to the 2D limit, their critical temperature

Quantitative studies of the critical regime near the superfluid-to-Mott-insulator transition

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Quantum fluctuations and condensate fraction during time-of-flight expansion

typically decreases. Here we report the opposite behavior, a substantial enhancement of

Observation of the nonlinear Hall effect under time reversal symmetric conditions.

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Dihedral-angle-corrected registry-dependent interlayer potential for multilayer graphene structures.

with decreasing thickness, in 2D crystalline superconductor 2H-TaS

Atomic and electronic reconstruction at van der Waals interface in twisted bilayer graphene.

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Pressure dependence of the magic twist angle in graphene superlattices

. Remarkably, in the monolayer limit,

Electronic structure theory of strained two-dimensional materials with hexagonal symmetry

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