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Dive into the research topics where Shigeaki Zaima is active.

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Featured researches published by Shigeaki Zaima.


Journal of Applied Physics | 1986

Piezoresistance in n‐channel inversion layers of silicon films on sapphire

Shigeaki Zaima; Yukio Yasuda; Seiji Kawaguchi; Manabu Tsuneyoshi; Tetsuro Nakamura; Akira Yoshida

The piezoresistance effect in n‐channel inversion layers of (001) silicon films on sapphire (SOS) and (001) bulk silicon has been studied at room temperature using metal‐oxide‐semiconductor field‐effect transistors radially arranged on a diaphragm with 36 mm in diameter. The piezoresistance characteristics of inversion layers are markedly different between SOS and bulk silicon. Main features of the experimental results are interpreted on the basis of the deformation potential theory and the surface quantization effect in inversion layers, and it is concluded that the difference between SOS and bulk silicon can be mainly explained by the effect of residual strain in SOS. The piezoresistance coefficients of inversion layers on SOS have been determined experimentally, and have been found that π11≂−π12. In addition, the comparison of the experimental value of π11/π12 with the calculated value is suggested that the transverse mobility of electrons in the valley which have its longitudinal axis of ellipsoid per...


Meeting Abstracts | 2013

Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary Alloy

Takashi Yamaha; Osamu Nakatsuka; Shotaro Takeuchi; Wakana Takeuchi; Noriyuki Taoka; Koji Araki; Koji Izunome; Shigeaki Zaima


Materia Japan | 1994

Development of Contact Materials for Semiconductor Devices. Electrical Properties and Crystallographic Stuctures of Transition Metal/Silicon Interfaces.

Shigeaki Zaima; Yukio Yasuda


ECS Transactions | 2018

(Invited) A New Application of Ge1−xSnx: Thermoelectric Materials

Masashi Kurosawa; Yukihiro Imai; Taisei Iwahashi; Kouta Takahashi; Mitsuo Sakashita; Osamu Nakatsuka; Shigeaki Zaima


Archive | 2015

Influence of precursor gas source on defect properties in Si1xGex epitaxial thin films

Shinichi Ike; Eddy Simoen; Yosuke Shimura; Andriy Hikavyy; Wilfried Vandervorst; Roger Loo; Wakana Takeuchi; Osamu Nakatsuka; Shigeaki Zaima


Journal of the Japanese Association of Crystal Growth | 2014

Crystal Growth and Interface Engineering of Group-IV Semiconductor Materials for Multi-Junction Solar Cells( Novel Solar Cells Utilizing Nano- and Hetero-Structure)

Osamu Nakatsuka; Shigeaki Zaima


59th Spring Meeting of the Japan Society of Applied Physics | 2012

Impact of Sn on Ga activation in heteroepitaxial Ge1-xSnx layer

Yosuke Shimura; Osamu Nakatsuka; Benjamin Vincent; Federica Gencarelli; Trudo Clarysse; Wilfried Vandervorst; Matty Caymax; Roger Loo; A Jensen; Dirch Petersen; Shigeaki Zaima


Archive | 2011

MBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers

Yosuke Shimura; Marika Nakamura; Takanori Asano; Shotaro Takeuchi; Osamu Nakatsuka; Benjamin Vincent; Federica Gencarelli; Trudo Clarysse; Wilfried Vandervorst; Matty Caymax; Roger Loo; Shigeaki Zaima


Archive | 2011

Molecular beam passivation of Ge compounds: surface, interface & gate stack studies

Clement Merckling; Xiao Sun; Yosuke Shimura; Alexis Franquet; Benjamin Vincent; Shotaro Takeuchi; Wilfried Vandervorst; Osamu Nakatsuka; Shigeaki Zaima; Roger Loo; Matty Caymax


Archive | 2011

Towards an understanding of the atomic-scale surface properties of Ge1-xSnx films

Claudia Fleischmann; Felix Seidel; Clement Merckling; Benjamin Vincent; Federica Gencarelli; Roger Loo; Yosuke Shimura; Osamu Nakatsuka; Shigeaki Zaima; Matty Caymax; Wilfried Vandervorst; K. Temst; André Vantomme

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Yukio Yasuda

Kochi University of Technology

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Wilfried Vandervorst

Katholieke Universiteit Leuven

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Roger Loo

Katholieke Universiteit Leuven

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Matty Caymax

Katholieke Universiteit Leuven

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Benjamin Vincent

Katholieke Universiteit Leuven

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Federica Gencarelli

Katholieke Universiteit Leuven

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