Shigeyuki Uzawa

Study of system performance in SFET

We shipped a small field exposure tool (SFET) to Selete (Semiconductor Leading Edge Technologies, Japanese Consortium) in 2006. The SFET was founded for the purpose of EUVL mask and resist development. We have been working on the exposure test and the tool evaluation in collaboration with Selete. In the development of the SFET, We have experienced to connect two types of light source to the SFET, LPP light source and DPP light source. And now we operate the SFET with DPP light source. On exchanging light source for DPP light source from LPP light source, we planed to apply the new illuminator unit optimized for DPP light source. The new illuminator unit of the SFET will improve dose uniformity on the imaging surface. We have installed the new illuminator unit of the SFET at Selete in 2007, and evaluated the effects of dose uniformity. In EUV lithography, the system performance reflects sensitively to the exposure results. We have been evaluating the SFET quantitatively on mainly sensitive factors, in the system performance, to exposure result. We try to take a correlation between the system performance and exposure results. In the system performance, the synchronization error between the wafer and mask stages is one of the main factors to exposure sensitivity. We continue to evaluate the relations between the system performance and the exposure results.

Canon's development status of EUVL technologies

Canon has been developing the EUVL technologies for more than ten years. The current development status of EUVL technologies is presented. The small field exposure tool (SFET) is positioned as a cornerstone of the manufacturing technologies for the EUVL beta tool. LPP source and the DPP source are the most expecting methods for the EUVL beta tools.

0.85-NA ArF scanner: advancing features and performances

In response to the age of full-scale ArF implementation in commercial production lines, we developed an 80 nm generation exposure tool, the FPA-6000AS4. This system is equipped with a 0.85 NA projection optics and an illuminator which provides a wide variety of illumination modes required in actual processes, such as variable annular and optional quadrupole and dipole. To meet the increasingly severe CD requirements, the projection optics is designed to have extremely low aberration with schemes to prevent flares. For enhanced focus accuracy, increased number of focus sensor channels and higher optics magnification are provided, coupled with Z-axis interferometer which directly measures the height of the stage. A new focus correction capability is incorporated based on direct measurement of reticle surface shape. The 6000 platform features the reaction-less stage system which significantly improves MA and MSD, the important indices of the stage performance. The platform also achieves throughput 1.4 times as high as the previous systems. This paper discusses the FPA-6000AS4’s imaging performance, reaction-less stage capability, reticle focusing, overlay, and throughput, showing some data.

Next-generation scanner to sub-100-nm lithography

The paper presents the Canon new scanner 6000 platform, incorporated in FPA-6000ES5 KrF scanner and FPA-6000AS4 ArF scanner, realizing both high productivity and high stage controllability for the sub 100nm lithography. We run aerial simulations and estimate process window criteria called CD-window to assess a focus budget and a CD budget meeting the requirement for CD uniformity at the MPU gate patterning in the 80 nm lithography node. The two budget are defined to be composed of image field deviation (IFD), dispersion of moving standard deviation (MSD) in scanning synchronization control, focusing accuracy, wafer chuck flatness, reticle flatness. These items are determined by experiments and the 6000 platform can be proven to be suitable for the 80 nm lithography node. Above all, reticle flatness is can be compensated adequately by the new focusing system and the real time z/tilt-image field curvature correcting system. Additionally, the result of overlay accuracy at the 6000 platform is also reported.

Development status of Canon's full-field EUVL tool

EUVL is the most promising candidate of 32 nm generations and beyond. In this paper, we present Canons development status of EUVL technologies. The system design of the EUV full field high volume manufacturing tool (VS2) is under way. The specification of VS2 is presented in this paper. The fabrication of six-aspheric-mirror prototype projection optics (PO1) of NA 0.3 has been started. The PO1 is fabricated to evaluate and improve our technologies of polishing and measuring the figure of mirrors. We present some results of the figuring accuracy of the mirror. EUVL will be required to resolve sub-twenty nm L&S patterns. We are studying off-axis illumination technologies and high- NA technologies. The simulation results of the resolution capability and the DOF are presented.

150-nm generation lithography equipment

Lithography by step-and-scan exposure is expected to be the mainstream for semiconductor manufacturing below 180 nm resolution patterns. We have developed a scanner for 150 nm features on either 200 mm or 300 mm wafers. For this system, the synchronous stage system has been redesigned which makes it possible to improve imaging performance and overlay accuracy. A new 300 mm wafer stage enhances productivity while weighting almost the same as the stage for 200 mm wafers. The mainbody mechanical frame incorporates reactive force receiver system to counter the inertial energy and vibrational issues associated with high speed wafer and reticle stage scanning. This report outlines the total system design, new technologies and performance data of the Cannon FPA-5000ES2 step-and-scan exposure tool developed for the 150 nm generation lithography.

Canon's Development Status of EUVL Technologies

Canon has been developing the EUVL technologies for more than ten years. The current development status of EUVL technologies is presented. The small field exposure tool (SFET) is positioned as a cornerstone of the manufacturing technologies for the EUVL beta tool. LPP source and the DPP source are the most expecting methods for the EUVL beta tools.