Shin-ichi Takahashi

Development of projection optics set-3 for high-numerical-aperture extreme ultraviolet exposure tool (HiNA)

We have developed a high-numerical-aperture extreme ultraviolet exposure tool (HiNA). HiNA is equipped with an illumination system, projection optics, a mask stage, and a wafer stage in the vacuum chamber. The projection optics consist of two aspherical mirrors (M1 and M2). The numerical aperture of the optics is 0.3. Thus far, we fabricated two sets of projection optics (set-1 and set-2). The wave-front errors of set-1 and set-2 were 7.5 and 1.9nm rms, respectively. We developed a third set of projection optics (set-3), the target wave-front error of which was less than 1nm rms. In set-3, we also attempted to reduce flare. We completed the mirror polishing, coating, and mirror adjustment of set-3. By using a recently developed polishing method, we reduced low-spatial-frequency roughness (LSFR), mid-spatial-frequency roughness (MSFR), and high-spatial-frequency roughness, simultaneously. The predicted wave-front error calculated from the LSFR number was 0.69nm rms. MSFR, which strongly affects the flare o...

Pattern displacement measurements for Si stencil reticles

We have fabricated Si stencil reticles that are employed by a new type of e-beam projection lithography system (EB stepper). We applied a stress reduction technique to the Si membrane to improve the pattern placement accuracy. The residual stress of Si membranes which were fabricated by anisotropic etching of B-doped Si wafers in KOH aqueous solution was reduced by annealing at 1150 °C. We carried out pattern-displacement measurements for a Si stencil reticle made of a Si membrane where the residual stress was reduced to 10 MPa, and we observed that the pattern displacement error was reduced to less than 20 nm. Furthermore, the pattern displacement in the stencil reticle had a high correlation with the displacement determined from a simulation based on a finite element model. However in the same reticle, we discovered additional, comparatively small displacements in random directions, which was not expected in a membrane that had a homogeneous tensile stress. As a cause of the pattern displacement in rand...

First dynamic exposure results from an electron projection lithography tool

Electron projection lithography (EPL) is one of the promising technologies below the 65 nm node, especially for contact hole and gate layers. Nikon is developing an EPL exposure tool as an electron beam (EB) stepper and the first generation EB stepper is now being manufactured. The voltage of 100 kV is adopted for electron beam acceleration. The subfield size is 0.25 mm×0.25 mm on the wafer and the deflection width of the electron beam is 5 mm on the wafer. The magnification of the projection optics is 1/4. A 5 mm×25 mm area from the φ200 mm reticle can be exposed by the combination of beam deflection and stage scanning motion (dynamic exposure). This area is called “a mechanical stripe.” After one mechanical stripe exposure, the reticle and wafer stages turn around and the next exposure of the adjacent mechanical stripe starts as a scan and stitch stage motion. Finally, a 20 mm×25 mm exposure field from the φ200 mm reticle is exposed. We report the first dynamic exposure in the history of EPL although on...

Pattern distortion of the stencil reticle caused by stress of silicon membrane and resist on the reticle

Silicon stencil reticle has been developing for the EB stepper, which is the electron beam projection lithography system for 70nm node generation and beyond. The reticle distortion is affected by stress such as silicon membrane stress and resist stress on a reticle in their fabrication. To analyze pattern distortion using finite element method (FEM), the image placement (IP) and the critical dimension (CD) errors of the stencil reticle were measured at every step of reticle fabrication processes. It was found that the resist stress is the key factor of IP error in the membrane process. In the wafer process, the IP errors are mainly related to silicon membrane stress. IP and CD errors of 200mm stencil reticle in both processes are discussed using FEM. The calculation results show CD errors are caused by the stress of silicon membrane. Moreover, it is discussed that CD error depends on pattern shape and density even on the stress-controlled reticle blanks.

EPL reticle technology

Nikon, in collaboration with IBM, has been developing EB stepper, which is the electron beam projection lithography (EPL) system for 70 nm node generation and below. As the standard reticle for EB stepper, the scattering silicon stencil type is used to obtain highest performance. The EB reticle has thin silicon membranes of thickness 2 micrometers and membrane size 1.13 mm square with stencil opening patterns, which are supported by a grid-grillage structure. The development of the EB reticle is one of key issues in the EB stepper development. We had accomplished 76nm reticle development using silicon-on-insulator wafer with a stress- controlled membrane. Now we are in the 200 mm reticle development phase. We have curried out experiments in cleaning, inspection and repair for the EB reticle, which are very important issues for the EB reticle fabrication. We showed possibilities of Ar aerosol cleaning, a reticle repair using Focused Ion Beam, pattern defect inspection with DUV microscope and so on.

Fabrication of aspherical mirrors for EUV projection optics set-3 of HiNA

We developed a high-numerical-aperture EUV exposure tool (HiNA). HiNA is equipped with an illumination system, projection optics, a mask stage and a wafer stage in the vacuum chamber. The projection optics consist of two aspherical mirrors (M1 and M2). The numerical aperture of the optics is 0.3. Thus far, we fabricated two sets of projection optics (set-1 and set-2). The wavefront errors of set-1 and set-2 were 7.5nm rms and 1.9nm rms, respectively. We developed the third set of projection optics (set-3), the target wavefront error of which was less than 1nm rms. In set-3, we also attempted to reduce flare. We completed the mirror polishing, coating and mirror adjustment of set-3. Using a new polishing method, we successfully reduced low-spatial-frequency roughness (LSFR), mid-spatial-frequency roughness (MSFR) and high-spatial-frequency roughness (HSFR) simultaneously. The predicted wavefront error calculated from the LSFR number was 0.69nm rms. MSFR, which strongly affects the flare of the optics, was significantly reduced to less than 0.2nm rms. The estimated flare was 7%, which is significantly reduced to one-fourth that of set-2. The wavefront error of set-3 was measured with the visible-light point diffraction interferometer (PDI) after coating and assembly. The wavefront error measured after adjustment and cramping of the adjustment system was 0.90nm rms, which is less than one-half the wavefront error of set-2.

Electron Optics Properties of Electron Beam Stepper

Electron projection lithography (EPL) is one of the most reliable lithography tools for 65 nm node generation and below. An electron optics (EO) subsystem, which has been developed in collaboration with IBM, and Nikons original stage/body are integrated into an electron beam (EB) stepper. The latest EO properties of the EB stepper are discussed. Experimentally, the curvilinear variable axis lens (CVAL) adjustment is established. Therefore, good resolution (better than 80 nm) and low nonlinear distortion (approximately 10 nm) is obtained at the maximum (2.5 mm) deflected sub-field on the test stand. After docking with body and stages, good resolution (better than 90 nm) is achieved for the on-axis beam.