Shin-ichiro Hayano

A Si bipolar 1.4-GHz time space switch LSI for B-ISDN

A 155-MB/s 32*32 Si bipolar switch LSI designed for wide application in the broadband ISDN was implemented. The operating speed is 1.4 GHz using an A-BSA Si bipolar process. Its throughput is 5.0 Gb/s by handling four 1.4-GHz interfaces, each of which supports an eight-channel multiplexed data stream. To realize a highly integrated high-speed bipolar LSI, power consumption and chip area should be reduced. Two technologies were developed for the LSI: (1) an active pull-down circuit with an embedded bias circuit in each gate, and (2) a modified standard cell with overlapped cell-channel structure. Using these technologies, total power consumption and chip area were reduced to 60% and 70%, respectively, of what is expected when conventional emitter-coupled logic (ECL) technologies and standard cell structures are used. The LSI evaluation results show that the developed LSI has sufficient performance to realize a large-scale B-ISDN switching system. >

A Si bipolar 1.4 GHz time space switch LSI for B-ISDN

The advanced active pull-down circuitry and the layout design technique to realize a high-speed, low-power LSI have been developed. A 32-channel broadband switch LSI operating at a 1.4-GHz clock-rate has been built to serve as a key component for B-ISDN systems. The total chip power dissipation is reduced by 60% compared with conventional ECL chips while avoiding the effect of cross talk noise. The chip area is reduced by 70% compared with a common standard cell structure.<<ETX>>