Shinichi Watabe

Growth of GaInP thick layers by the modified yo-yo solute feeding method

Abstract A new process for the yo-yo solute feeding method has been developed to grow a thick Ga x In 1−x P alloy layer. In this process, we lowered the temperature of every cycle by 5°C. Only after three cycles was a Ga 0.69 In 0.31 P layer of about 70 μm in thickness epitaxially grown on a GaAsP(100) substrate. The thick layer shows the FWHM of PL (photoluminescence) peaks of 37.2 meV at 300 K and 13.7 meV at 4 K, which indicates high quality comparable with normal LPE-grown thin layers.

The effect of indium-bismuth solvent on the composition of InGaP grown by the “yo-yo” solute feeding method

Abstract In the “yo-yo” solute feeding method, growth is promoted by the difference between the specific gravities of the solute and the solvent. An indium-bismuth mixture was used as solvent in this study because the density of bismuth is about 1.3 times higher than that of indium. The GaP substrate and the InP source were placed above and below the melt, respectively. As a result, an InGaP epitaxial layer in which InP increases along with its thickness was grown on the GaP substrate. The thickness and the rate of increase of the InP in the growth layer obtained from one “yo-yo” cycle with In-Bi solvent exceeded that with In solvent only. These results suggest that the difference between the specific gravities of the solute greatly affects not only the extent of the grown but also the alloy composition.