Shinji Uya

Analysis of Charge Transfer Loss in Dual Read-Out Registers Used for HDTV CCD Image Sensor

Dual read-out register structure is indispensable for high definition television (IIDTV) CCD inage sensors to realize high signal read-out frequency (74.25MH2). llowever, this structure would suffer from a charge transfer loss between two read-out registers, unless precise care was taken in designing the registers. This paper describes the charge transfer loss nechanisn and proposes a new dual register structure, which can elininate this problen. As a result, the charge transfer loss is conpletely suppressed.

A ½-Inch 792(H) × 492(V) Pixel Colour Synchro Vision CCD Image Sensor

Publisher Summary This chapter discusses a ½-inch 792(H) × 492(V) pixel color synchro vision charge-coupled devices (CCDs) image sensor. A black and white synchro vision (SV)-CCD with CCD swing operation realizes a doubling in resolution. CCD swing operation was also applied to a one-chip color CCD with a checkerboard pixel layout. A new high-resolution SV-CCD image sensor using a ½-inch 792(H) × 492(V) pixel CCD chip has been fabricated. This device has achieved simultaneous resolution enhancement for both luminance and color signals. In addition, aliasing and Moire effects have been significantly reduced without using an optical low-pass filter. The pixel unit is composed of a photodiode and a vertical CCD register, which is optically shielded. The area of the photodiode is the aperture for incident light. A full-frame element comprises the signal stored at the first site during one field and that stored at the second, adjacent, site during the next field interval.