Shintaro Yoshii

Grain growth of polycrystalline silicon films on SiO2 by cw scanning electron beam annealing

Reduced pressure, chemical vapor deposited polycrystalline silicon films (5000 A thick) over thermally grown SiO2 on (100) silicon wafers are recrystallized by a scanning electron microscope modified electron beam annealing system. On the basis of transmission electron microscope bright‐field images and electron diffraction patterns, large grained polycrystalline silicon films of 20‐μm average grain size are obtained after electron beam annealing. Electron beam current, scanning rate, and annealing repetition are found to be important parameters in the recrystallization. Optimum values for them are from 1.6 to 1.9 mA, from 40 to 80 cm/sec, and from 5 to 10 times, respectively.

Emission Characteristics for , and LaB6 Cathodes

Characteristics for electron beam emitted from , and axial orientation LaB6 cathodes after 100 hours of aging were studied. It is inferred from the emission pattern and cross-over image that electrons are emitted to a great extent from the top surface for the cathode and mainly from the conical surface for and cathodes at a bias voltage that gives maximum brightness. This inference clearly explains the electron beam characteristics such as brightness, emission angle and total beam current.