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Dive into the research topics where Shinya Asami is active.

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Featured researches published by Shinya Asami.


Light-emitting diodes : research, manufacturing, and applications. Conference | 1997

GaInN/GaN multiple quantum wells green LEDs

Masayoshi Koike; Norikatsu Koide; Shinya Asami; Junichi Umezaki; Seiji Nagai; Shiro Yamasaki; Nobuyuki Shibata; Hiroshi Amano; Isamu Akasaki

The high-efficient blue, green light-emitting diodes (LEDs) using GaInN/GaN multiple quantum wells (MQW) have been successfully developed. The peak wavelength of MQW blue and green LEDs are approximately 460nm and 520nm, respectively. The full width at half-maximum of the MQW blue LEDs is 40nm at a forward current of 20mA which is much narrower than 70nm of the conventional blue LEDs. The degrees of shift in peak wavelength of the MQW blue and green LEDs are less than 5nm in the current ranging from 5mA to 50mA.


Archive | 2002

Semiconductor light emitting device and manufacturing method thereof

Norikatsu Koide; Shinya Asami; Junichi Umezaki; Masayoshi Koike; Shiro Yamasaki; Seiji Nagai


Archive | 1996

Light-emitting semiconductor device using group III nitride compound

Shinya Asami; Masayoshi Koike


Archive | 2001

Group III nitride compound semiconductor device and method for producing the same

Naoki Shibata; Jun Ito; Toshiaki Chiyo; Shizuyo Asami; Hiroshi Watanabe; Shinya Asami


Archive | 1995

Light-emitting semiconductor device using group III nitrogen compound

Norikatsu Koide; Shiro Yamazaki; Junichi Umezaki; Shinya Asami


Archive | 2003

Light-emitting semiconductor device using gallium nitride compound semiconductor

Hisaki Kato; Hiroshi Watanabe; Norikatsu Koide; Shinya Asami


Archive | 2000

Group III nitride compound semiconductor device and method for producing

Naoki Shibata; Jun Ito; Toshiaki Chiyo; Shizuyo Asami; Hiroshi Watanabe; Shinya Asami


Archive | 2000

Group III nitride compound semiconductor device and method of producing the same

Naoki Shibata; Jun Ito; Toshiaki Chiyo; Shizuyo Asami; Hiroshi Watanabe; Masanobu Senda; Shinya Asami


Archive | 1997

Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed

Michinari Sassa; Naoki Shibata; Shinya Asami; Masayoshi Koike; Junichi Umezaki; Takahiro Kozawa


Archive | 1996

Iii group nitride semiconductor light emitting element

Shinya Asami; Norikatsu Koide; Masayoshi Koike; Junichi Umezaki; 典克 小出; 正好 小池; 潤一 梅崎; 慎也 浅見

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