Shinya Kasai

Electrical switching of the vortex core in a magnetic disk

A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate for a memory cell for future non-volatile data-storage devices. Thus, an understanding of the stability and dynamical behaviour of the magnetic vortex is a major requirement for developing magnetic data-storage technology. Since the publication of experimental proof for the existence of a nanometre-scale core with out-of-plane magnetization in a magnetic vortex, the dynamics of vortices have been investigated intensively. However, a way to electrically control the core magnetization, which is a key for constructing a vortex-core memory, has been lacking. Here, we demonstrate the electrical switching of the core magnetization by using the current-driven resonant dynamics of the vortex; the core switching is triggered by a strong dynamic field that is produced locally by a rotational core motion at a high speed of several hundred metres per second. Efficient switching of the vortex core without magnetic-field application is achieved owing to resonance. This opens up the potentiality of a simple magnetic disk as a building block for spintronic devices such as a memory cell where the bit data is stored as the direction of the nanometre-scale core magnetization.

Tdrd1/Mtr-1, a tudor-related gene, is essential for male germ-cell differentiation and nuage/germinal granule formation in mice

Embryonic patterning and germ-cell specification in mice are regulative and depend on zygotic gene activities. However, there are mouse homologues of Drosophila maternal effect genes, including vasa and tudor, that function in posterior and germ-cell determination. We report here that a targeted mutation in Tudor domain containing 1/mouse tudor repeat 1 (Tdrd1/Mtr-1), a tudor-related gene in mice, leads to male sterility because of postnatal spermatogenic defects. TDRD1/MTR-1 predominantly localizes to nuage/germinal granules, an evolutionarily conserved structure in the germ line, and its intracellular localization is downstream of mouse vasa homologue/DEAD box polypeptide 4 (Mvh/Ddx4), similar to Drosophila vasa-tudor. Tdrd1/Mtr-1 mutants lack, and Mvh/Ddx4 mutants show, strong reduction of intermitochondrial cement, a form of nuage in both male and female germ cells, whereas chromatoid bodies, another specialized form of nuage in spermatogenic cells, are observed in Tdrd1/Mtr-1 mutants. Hence, intermitochondrial cement is not a direct prerequisite for oocyte development and fertility in mice, indicating differing requirements for nuage and/or its components between male and female germ cells. The result also proposes that chromatoid bodies likely have an origin independent of or additional to intermitochondrial cement. The analogy between Mvh-Tdrd1 in mouse spermatogenic cells and vasa-tudor in Drosophila oocytes suggests that this molecular pathway retains an essential role(s) that functions in divergent species and in different stages/sexes of the germ line.

Current-driven resonant excitation of magnetic vortices.

A magnetic vortex core in a ferromagnetic circular nanodot has a resonance frequency originating from the confinement of the vortex core. By the micromagnetic simulation including the spin-transfer torque, we show that the vortex core can be resonantly excited by an ac (spin-polarized) current through the dot and that the resonance frequency can be tuned by the dot shape. The resistance measurement under the ac current successfully detects the resonance at the frequency consistent with the simulation.

Bulk and interfacial scatterings in current-perpendicular-to-plane giant magnetoresistance with Co2Fe(Al0.5Si0.5) Heusler alloy layers and Ag spacer

We report the transport properties of a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) device with Co2Fe(Al0.5Si0.5) (CFAS) Heusler alloy ferromagnetic layers and a Ag spacer layer. The CPP-GMR devices showed relatively high ΔRA values and MR ratios up to 17 m Ω μm2 and 80% at 14 K, and 8 m Ω μm2 and 34% at 290 K. The spin diffusion length ∼3 nm and the bulk spin asymmetry ∼0.77 for the CFAS alloy at 14 K were estimated by the Valet–Fert model, indicating a large contribution of the interfacial scattering.

Large positive magnetoresistive effect in silicon induced by the space-charge effect.

Recent discoveries of large magnetoresistance in non-magnetic semiconductors have gained much attention because the size of the effect is comparable to, or even larger than, that of magnetoresistance in magnetic systems. Conventional magnetoresistance in doped semiconductors is straightforwardly explained as the effect of the Lorentz force on the carrier motion, but the reported unusually large effects imply that the underlying mechanisms have not yet been fully explored. Here we report that a simple device, based on a lightly doped silicon substrate between two metallic contacts, shows a large positive magnetoresistance of more than 1,000 per cent at room temperature (300 K) and 10,000 per cent at 25 K, for magnetic fields between 0 and 3 T. A high electric field is applied to the device, so that conduction is space-charge limited. For substrates with a charge carrier density below ∼1013 cm-3, the magnetoresistance exhibits a linear dependence on the magnetic field between 3 and 9 T. We propose that the observed large magnetoresistance can be explained by quasi-neutrality breaking of the space-charge effect, where insufficient charge is present to compensate the electrons injected into the device. This introduces an electric field inhomogeneity, analogous to the situation in other semiconductors in which a large, non-saturating magnetoresistance was observed. In this regime, the motions of electrons become correlated, and thus become dependent on magnetic field. Although large positive magnetoresistance at room temperature has been achieved in metal–semiconductor hybrid devices, we have now realized it in a simpler structure and in a way different from other known magnetoresistive effects. It could be used to develop new magnetic devices from silicon, which may further advance silicon technology.

Domain Wall Motion Induced by Electric Current in a Perpendicularly Magnetized Co/Ni Nano-Wire

The authors show experimental results on domain wall motion induced by electric current in a Co/Ni nano-wire with perpendicular magnetic anisotropy. The motion was detected electrically by using the anomalous Hall effect. Threshold current density for the domain wall motion was found to decrease with decreasing the wire width, where the minimum threshold current density of approximately 5×1011 A/m2 was observed for the wire width of 70 nm.

Large magnetoresistance in current-perpendicular-to-plane pseudospin valve using a Co2Fe"Ge0.5Ga0.5… Heusler alloy

Using a newly developed highly spin-polarized Heusler alloy, Co2Fe(Ga0.5Ge0.5) (CFGG), as ferromagnetic layers, we have fabricated a current-perpendicular-to-plane pseudospin valve with large resistance change-area product (ΔRA) of 9.5 mΩ μm2 and magnetoresistance (MR) ratio (100×ΔR/R) of 41.7% at 300 K. These values were further enhanced to ΔRA=26.4 mΩ μm2 and MR=129.1% at 10 K. The large MR values are attributed to the high spin polarization of the CFGG alloy confirmed by point contact Andreev reflection measurements.

Control of Domain Wall Position by Electrical Current in Structured Co/Ni Wire with Perpendicular Magnetic Anisotropy

We report the direct observation of the current-driven domain wall (DW) motion by magnetic force microscopy in a structured Co/Ni wire with perpendicular magnetic anisotropy. The wire has notches to define the DW position. It is demonstrated that single current pulses can precisely control the DW position from notch to notch with high DW velocity of 40 m/s.

Dynamics of coupled vortices in a pair of ferromagnetic disks.

We here experimentally demonstrate that gyration modes of coupled vortices can be resonantly excited primarily by the ac current in a pair of ferromagnetic disks with variable separation. The sole gyration mode clearly splits into higher and lower frequency modes via dipolar interaction, where the main mode splitting is due to a chirality sensitive phase difference in gyrations of the coupled vortices, whereas the magnitude of the splitting is determined by their polarity configuration. These experimental results show that the coupled pair of vortices behaves similar to a diatomic molecule with bonding and antibonding states, implying a possibility for designing the magnonic band structure in a chain or an array of magnetic vortex oscillators.

Switching magnetic vortex core by a single nanosecond current pulse

In a ferromagnetic nanodisk, the magnetization tends to swirl around in the plane of the disk and can point either up or down at the center of this “magnetic vortex.” This binary state can be useful for information storage. It is demonstrated that a single nanosecond current pulse can switch the core polarity. This method also provides the precise control of the core direction, which constitutes fundamental technology for realizing a vortex core memory.