Yoshinobu Nakatani

Magnetization vector manipulation by electric fields

Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted–Ampère field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect—direct electrical control of magnetization—has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal–insulator–semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.

Electrical switching of the vortex core in a magnetic disk

A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate for a memory cell for future non-volatile data-storage devices. Thus, an understanding of the stability and dynamical behaviour of the magnetic vortex is a major requirement for developing magnetic data-storage technology. Since the publication of experimental proof for the existence of a nanometre-scale core with out-of-plane magnetization in a magnetic vortex, the dynamics of vortices have been investigated intensively. However, a way to electrically control the core magnetization, which is a key for constructing a vortex-core memory, has been lacking. Here, we demonstrate the electrical switching of the core magnetization by using the current-driven resonant dynamics of the vortex; the core switching is triggered by a strong dynamic field that is produced locally by a rotational core motion at a high speed of several hundred metres per second. Efficient switching of the vortex core without magnetic-field application is achieved owing to resonance. This opens up the potentiality of a simple magnetic disk as a building block for spintronic devices such as a memory cell where the bit data is stored as the direction of the nanometre-scale core magnetization.

Direct Solution of the Landau-Lifshitz-Gilbert Equation for Micromagnetics

A mathematical framework is presented for solving the Landau-Lifshitz-Gilbert equation expressed in Cartesian components of magnetization according to the backward difference method without conflicting with the constraint of constant magnetization. Test calculation shows that the method allows the use of a large time step almost independent of spatial mesh size and damping constant. The derived program is used to calculate the magnetization structure of a crosstie wall in a Permalloy film yielding calculated structures which closely resemble the electron-holography image of an actual cross-tie wall. It is also used to investigate magnetization reversal mechanisms in fine ferromagnetic particles by pursuing time dependent changes in magnetization structures. The paper gives detailed descriptions of the reversal mechanisms which differ depending on the size of the particle.

Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.

Current-driven resonant excitation of magnetic vortices.

A magnetic vortex core in a ferromagnetic circular nanodot has a resonance frequency originating from the confinement of the vortex core. By the micromagnetic simulation including the spin-transfer torque, we show that the vortex core can be resonantly excited by an ac (spin-polarized) current through the dot and that the resonance frequency can be tuned by the dot shape. The resistance measurement under the ac current successfully detects the resonance at the frequency consistent with the simulation.

Domain wall motion by spin-polarized current: a micromagnetic study

The effect of a spin-polarized current crossing a domain wall in a thin and narrow Permalloy™ strip is studied by micromagnetic simulations, supported by a one-dimensional model of wall dynamics. We use the simplest way to incorporate the spin-polarized current effect in the micromagnetic formalism; namely, a local momentum transfer under the assumption that the current polarization is in local equilibrium. We predict current influence on wall velocity and mobility under field. However, in order to reach agreement with recent experiments, more than ten times larger currents would be required within this simplest model. Thus, more elaborate models of spin transfer are needed.

Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire

Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowires with a stack structure of Ta(1.0 nm)/CoFeB(1.2 nm)/MgO(2.0 nm)/Ta(1.0 nm) was investigated. Domain wall motion driven by adiabatic spin-transfer torque was observed at a current of about 74 μA, corresponding to a current density of 6.2×107 A/cm2. The obtained results were compared with those of a micromagnetic simulation and the spin polarization of the CoFeB was estimated to be 0.72.

Current-induced magnetic vortex motion by spin-transfer torque

We investigate the dynamics of a magnetic vortex driven by spin-transfer torque due to spin current in the adiabatic case. The vortex core represented by collective coordinate experiences a transverse force proportional to the product of spin current and gyrovector, which can be interpreted as the geometric force determined by topological charges. We show that this force is just a reaction force of Lorentz-type force from the spin current of conduction electrons. Based on our analyses, we propose analytically and numerically a possible experiment to check the vortex displacement by spin current in the case of single magnetic nanodot.

Control of Multiple Magnetic Domain Walls by Current in a Co/Ni Nano-Wire

All-electrical control and local detection of multiple magnetic domain walls in perpendicularly magnetized Co/Ni nano-wires were demonstrated. A series of domain walls was reproducibly shifted in the same direction by the current, keeping the distance between the walls almost the same. Furthermore, the walls can be shifted back and forth depending on the direction of the pulsed currents.

Domain Wall Motion Induced by Electric Current in a Perpendicularly Magnetized Co/Ni Nano-Wire

The authors show experimental results on domain wall motion induced by electric current in a Co/Ni nano-wire with perpendicular magnetic anisotropy. The motion was detected electrically by using the anomalous Hall effect. Threshold current density for the domain wall motion was found to decrease with decreasing the wire width, where the minimum threshold current density of approximately 5×1011 A/m2 was observed for the wire width of 70 nm.