Shoujun Zheng

Monolayers of WxMo1−xS2 alloy heterostructure with in-plane composition variations

We report the fabrication of single-crystal monolayer WxMo1−xS2 alloy triangles using chemical vapor deposition method. Raman and photoluminescence property are investigated in correlation to the composition. In the monolayer triangles, the photoluminescence peak shifts continuously from 687.4 nm at the triangle center to 633.6 nm at the edge, corresponding to a switch from MoS2 to WS2 across the heterojunction. This composition-graded alloy may have interesting functions in broadband photodetection and multi-color light emission.

2D Black Phosphorus/SrTiO3‐Based Programmable Photoconductive Switch

A novel heterostructure is designed by stacking 2D black phosphorus (BP) on a SrTiO3 substrate. The device demonstrates programmable photoconductive switching under illumination of UV and red light. The light-tunable persistent photoconductivity exhibits a large on/off ratio exceeding 10(5) . The persistent state shows almost no relaxation or decay at low temperature. These features are suitable for a new generation of optoelectronic devices for memory application.

Giant enhancement of cathodoluminescence of monolayer transitional metal dichalcogenides semiconductors

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar cells, photo-detectors, light-emitting diodes and photo-transistors, capacitive energy storage, photodynamic cancer therapy and sensing on flexible platforms. While light-induced luminescence has been widely studied, luminescence induced by injection of free electrons could promise another important applications of these new materials. However, cathodoluminescence is inefficient due to the low cross-section of the electron-hole creating process in the monolayers. Here for the first time we show that cathodoluminescence of monolayer chalcogenide semiconductors can be evidently observed in a van der Waals heterostructure when the monolayer semiconductor is sandwiched between layers of hexagonal boron nitride (hBN) with higher energy gap. The emission intensity shows a strong dependence on the thicknesses of surrounding layers and the enhancement factor is more than 1000 folds. Strain-induced exciton peak shift in the suspended heterostructure is also investigated by the cathodoluminescence spectroscopy. Our results demonstrate that MoS2, WS2 and WSe2 could be promising cathodoluminescent materials for applications in single-photon emitters, high-energy particle detectors, transmission electron microscope displays, surface-conduction electron-emitter and field emission display technologies.Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2, and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for optoelectronic applications including solar cells, photodetectors, light-emitting diodes and phototransistors, capacitive energy storage, photodynamic cancer therapy, and sensing on flexible platforms. While light-induced luminescence has been widely studied, luminescence induced by injection of free electrons could promise another important applications of these new materials. However, cathodoluminescence is inefficient due to the low cross-section of the electron-hole creating process in the monolayers. Here for the first time we show that cathodoluminescence of monolayer chalcogenide semiconductors can be evidently observed in a van der Waals heterostructure when the monolayer semiconductor is sandwiched between layers of hexagonal boron nitride (hBN) with higher energy gap. The emission intensity shows a strong dependence on the thicknesses of surrounding layers and the enhancement factor is more than 500-fold. Strain-induced exciton peak shift in the suspended heterostructure is also investigated by the cathodoluminescence spectroscopy. Our results demonstrate that MoS2, WS2, and WSe2 could be promising cathodoluminescent materials for applications in single-photon emitters, high-energy particle detectors, transmission electron microscope displays, surface-conduction electron-emitter, and field emission display technologies.

Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS 2

The stronger photoluminescence (PL) in chemical vapor deposition (CVD) grown monolayer MoS2 has been attributed to its high crystal quality compared with that in mechanically exfoliated (ME) crystal, which is contrary to the cognition that the ME crystal usually have better crystal quality than that of CVD grown one and it is expected with a better optical quality. In this report, the reason of abnormally strong PL spectra in CVD grown monolayer crystal is systematically investigated by studying the in-situ opto-electrical exploration at various environments for both of CVD and ME samples. High resolution transmission electron microscopy is used to investigate their crystal qualities. The stronger PL in CVD grown crystal is due to the high p-doping effect of adsorbates induced rebalance of exciton/trion emission. The first principle calculations are carried out to explore the interaction between adsorbates in ambient and defects sites in MoS2, which is consistent to the experimental phenomenon and further confirm our proposed mechanisms.

Light-Tunable 1T-TaS2 Charge-Density-Wave Oscillators

External stimuli-controlled phase transitions are essential for fundamental physics and design of functional devices. Charge density wave (CDW) is a metastable collective electronic phase featured by the periodic lattice distortion. Much attention has been attracted to study the external control of CDW phases. Although much work has been done in the electric-field-induced CDW transition, the study of the role of Joule heating in the phase transition is insufficient. Here, using the Raman spectroscopy, the electric-field-driven phase transition is in situ observed in the ultrathin 1T-TaS2. By quantitative evaluation of the Joule heating effect in the electric-field-induced CDW transition, it is shown that Joule heating plays a secondary role in the nearly commensurate (NC) to incommensurate (IC) CDW transition, while it dominants the IC-NC CDW transition, providing a better understanding of the electric field-induced phase transition. More importantly, at room temperature, light illumination can modulate the CDW phase and thus tune the frequency of the ultrathin 1T-TaS2 oscillators. This light tunability of the CDW phase transition is promising for multifunctional device applications.