Shuangtao Liu

Growing process of CdS nanoclusters in zeolite Y studied by positron annihilation

Zeolite Y has been used as the host to generate CdS nanoclusters. The location of CdS nanoclusters inside zeolite hosts was confirmed by the blue-shifted reflection absorption spectra with respect to that of bulk CdS materials. But which kind of cage inside zeolite Y, sodalite cage or supercage, was preferred for the CdS clusters remained unclear. In this paper, we conducted positron annihilation spectroscopy (PAS) measurements for the first time on a series of CdS/Y zeolite samples and concluded that CdS clusters were not located in supercages but in smaller sodalite cages. The stability of CdS clusters inside the sodalite units was due to the coordination of Cd atoms with the framework oxygen atoms of the double six-ring windows. Moreover, PAS revealed some important information of surface states existing on the interfacial layers between CdS clusters and zeolite Y.

Trends in land surface evapotranspiration across China with remotely sensed NDVI and climatological data for 1981–2010

Abstract Using satellite observations of Normalized Difference Vegetation Index (NDVI) from NOAA-AVHRR and Terra-MODIS, together with climatic data in a physical evapotranspiration (ET) model, the spatio-temporal variability of ET is investigated in terrestrial China from 1981 to 2010. The model predictions of actual ET (ETa) are validated with ET values from in situ eddy covariance flux measurements and from basin water balance calculations. The national averaged crop reference ET (ETp) and ETa values are 916 ± 21 and 415 ± 12 mm year-1, respectively. The annual ETa pattern is closely associated with vegetation conditions in the eastern part of China, whereas ETa is low in the sparsely-vegetated areas and deserts in the northwestern region, corresponding to scarce rainfall events and amounts. The trends of ETp and ETa are remarkably different over the country, and the complementary relationship between ETp and ETa is revealed for the study period. Averaged over the whole country, ETa showed an increasing trend from the 1980s to the mid-1990s, followed by a decreasing trend, consistent with the precipitation anomaly. Across the main vegetation types, annual ETa amounts are found to correspond clearly with the bands of precipitation and ETp.

The residual C concentration control for low temperature growth p-type GaN*

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration: (i) the C concentration decreases with the increase of growth pressure; (ii) we have found there exists a Ga memory effect when changing the Cp2Mg flow which will lead the growth rate and C concentration increase along the increase of Cp2Mg flow; (iii) annealing outside of metal–organic chemical vapor deposition (MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide*

The upper waveguide (UWG) has direct influences on the optical and electrical characteristics of the violet laser diode (LD) by changing the optical field distribution or barrier of the electron blocking layer (EBL). In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power (OLP) under an injecting current of 120 mA or the threshold current (I th) is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/Al x Ga1−x N (0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor (OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.

Synchronized 4 × 12 GHz hybrid harmonically mode-locked semiconductor laser based on AWG.

We report a monolithically integrated synchronized four wavelength channel mode-locked semiconductor laser chip based on arrayed waveguide grating and fabricated in the InP material system. Device fabrication was completed in a multiproject wafer foundry run on the Joint European Platform for Photonic Integration of Components and Circuits. The integrated photonic chip demonstrated 5th harmonic electrical hybrid mode-locking operation with four 400 GHz spacing wavelength channels and synchronized to a 12.7 GHz RF clock, for nearly transform-limited optical pulse trains from a single output waveguide. A low timing jitter of 0.349 ps, and RF frequency locking range of ~50 MHz were also achieved.

Curved focal plane extreme ultraviolet detector array for a EUV camera on CHANG E lander

A novel curved focal plane extreme ultraviolet (EUV) detector array designed for a moon-based EUV camera is demonstrated. The curved focal plane detector array operating in a pulse-counting mode consists of a curved microchannel plate (MCP) stack and an induced charge wedge-strip anode (WSA). The curved MCP is fabricated by firstly thermally slumping of the MCPs, and then followed by optical polishing and core glass etching. By using this technology, curved MCPs with a length-to-diameter (L/D) ratio of 80:1 and a radius of curvature of 150 mm have been successfully achieved. The performance of the curved MCP detector is fully characterized in terms of the background noise, pulse height distribution, gain, image linearity and spatial resolution. It is measured that a spatial resolution of 7.13 lp/mm can be achieved with a background noise of less than 0.3 counts/cm2⋅s. The characterization results indicate that the curved focal plane detector can fulfill the requirements of the moon-based EUV camera.

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) are investigated. It is observed from the room temperature (RT) photoluminescence (PL) measurements that the YL band is enhanced in the PL spectra of those samples if their MOCVD growth is carried out with a decrease of pressure, temperature, or flow rate of NH3. Furthermore, a strong dependence of YL band intensity on the carbon concentration is found by secondary ion mass spectroscopy (SIMS) measurements, demonstrating that the increased carbon-related defects in these samples are responsible for the enhancement of the YL band.

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In x Ga1–x N/GaN multiple-quantumwell (MQW) laser diode (LD), the Al composition of inserted p-type Al x Ga1–x N electron blocking layer (EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In0.04Ga0.96N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al x Ga1–x N hole blocking layer (HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al x Ga1–x N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al x Ga1–x N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

A series of samples with a different InGaN/GaN shallower-quantum well (SQW) interlayer are grown, and their effects on optical properties of InGaN/GaN multi-quantum wells and optical confinement factor of laser diodes (LDs) are investigated. It is found that when an SQW interlayer is inserted below InGaN/GaN green multiquantum wells (GMQWs), the emission intensity of the GMQW active region increases. This is attributed to the reduction of quantum confined stark effect and the V-pit density due to the decreased strain in GMQWs. In addition, we also find that inserting an SQW interlayer theoretically results in a weak leakage of the optical mode for green LDs. Therefore, their performance will be improved.

Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells

We experimentally investigate the influence of indium composition on the photovoltaic performance of InGaN/GaN multiple-quantum-well (MQW) solar cells. Three MQW structures with different In content are grown via metal-organic chemical vapor deposition, and then fabricated into solar cell devices. The solar cells with lower In content show stronger photovoltaic response, which may be ascribed to both smaller piezoelectric fields in InGaN well layers and better material quality of MQW active region. In addition, based on the capacitance–voltage measurements by which the profiles of apparent carrier concentration can be determined, we find that in the higher-In-content solar cells the background electron concentration in unintentionally doped InGaN QWs is higher. Consequently, the effective volume of active region, or the width of depletion region, may become smaller at zero bias and correspondingly the light absorption by InGaN active layers is reduced. This may be attributed to the increased nitrogen vacancy-related defects which are easier induced into In-rich InGaN alloys as a source of shallow donors.