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Featured researches published by Shuji Nishimoto.


Microelectronics Reliability | 2018

Novel silver die-attach technology on silver pre-sintered DBA substrates for high temperature applications

Shuji Nishimoto; Seyed Ali Moeini; Toyo Ohashi; Yoshiyuki Nagatomo; Patrick McCluskey

Abstract Currently, Ag die-attach techniques, using nano-silver particles, are of high interest for manufacturing of wide-band-gap (WBG) power module due to their high-temperature operation capability. However, the high cost of silver and complicated processing requirements are the main driving force in the search for simpler and more cost-effective attached technologies. In this study, a new die-attach technique based on silver die-attach, without conventional Ag-paste, for high-temperature applications is developed. Glass containing Ag paste was pre-sintered on the DBA substrates, and later on, semiconductor dies were simply placed on this pre-sintered Ag layer and attached under heat and pressure. The samples were tested under shear and thermal cycling loadings (−45 °C/250 °C) to evaluate the quality and reliability. Destructive and non-destructive analysis methods, such as Scanning Acoustic Tomography and cross-section observation, were used to identify fracture modes. The samples demonstrated sufficient shear strength and high thermal reliability. Furthermore, the effects of Ag recrystallization, grain growth and rearrangement of the voids are considered to be the main fracture factor of conventional Ag die-attach joints based on samples cross-sections.


PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of | 2015

Development of direct bonded aluminum substrates with sintered Ag layer for SiC power modules

Shuji Nishimoto; Yoshiyuki Nagatomo; Toshiyuki Nagase


Archive | 2014

Metal member with ground layer, insulating circuit board, semiconductor device, insulating circuit board with heat sink, and method of manufacturing metal member with ground layer

修司 西元; Shuji Nishimoto; 長友 義幸; Yoshiyuki Nagatomo; 義幸 長友


Archive | 2013

Conductive composition and method for manufacturing solar battery using the same

Ryuji Uesugi; 隆二 植杉; Shuji Nishimoto; 修司 西元; Toshiharu Hayashi; 年治 林; Yoshio Kuromitsu; 祥郎 黒光


Archive | 2012

Solder joint structure, power module, substrate for power module with heat sink, method for manufacturing solder joint structure, method for manufacturing power module, and method for manufacturing substrate for power module with heat sink

Shuji Nishimoto; 修司 西元; Yoshiyuki Nagatomo; 義幸 長友


Archive | 2014

パワーモジュール用基板、およびその製造方法、パワーモジュール

修司 西元; Shuji Nishimoto; 長友 義幸; Yoshiyuki Nagatomo


Archive | 2013

はんだ接合構造、パワーモジュール、ヒートシンク付パワーモジュール用基板及びそれらの製造方法、並びにはんだ下地層形成用ペースト

Shuji Nishimoto; 修司 西元; Kimihito Nishikawa; 仁人 西川; Yoshiyuki Nagatomo; 長友 義幸


Archive | 2013

Dispositif à semi-conducteur, carte de circuit imprimé en céramique et procédé de fabrication de dispositif à semi-conducteur

Shuji Nishimoto; Yoshiyuki Nagatomo; Toshiyuki Nagase


Archive | 2013

Substrat pour module électrique, substrat pour module électrique à élément métallique, module électrique à élément métallique, procédé de fabrication de substrat pour module électrique, procédé de fabrication de substrat pour module électrique à élément métallique

Shuji Nishimoto; 修司 西元; Yoshiyuki Nagatomo; 長友 義幸


Archive | 2013

Lötverbindungsstruktur, leistungsmodul, an einem kühlkörper befestigtes substrat für ein leistungsmodul, verfahren zur herstellung dieses substrats und paste zur herstellung einer lötunterschicht

Shuji Nishimoto; Kimihito Nishikawa; Yoshiyuki Nagatomo

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Yoshiyuki Nagatomo

MITSUBISHI MATERIALS CORPORATION

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Kimihito Nishikawa

MITSUBISHI MATERIALS CORPORATION

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Toshiyuki Nagase

MITSUBISHI MATERIALS CORPORATION

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Toshiharu Hayashi

MITSUBISHI MATERIALS CORPORATION

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Toyo Ohashi

MITSUBISHI MATERIALS CORPORATION

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