Shunfeng Wang

Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V(-1) s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.

Exciton–Plasmon Coupling and Electromagnetically Induced Transparency in Monolayer Semiconductors Hybridized with Ag Nanoparticles

Hybrid systems of excitons strongly coupled to localized surface plasmons supported by metallic nanoparticles define a new approach to control light-matter interactions. Here, we report exciton-plasmon coupling in two-dimensional (2D) semiconductors, such as MoS2 and WS2, hybridized with silver nanoparticles. Prominent photoluminescence enhancement in monolayer MoS2 was observed with localized surface plasmon resonance (LSPR) tuned to the exciton resonance. By tuning the excitation energy, the contributions from near field enhancement and radiative emission rate enhancement via Purcell effect were resolved. Strong coherent dipole-dipole coupling between excitons and LSPR in resonant condition manifests as an electromagnetically induced transparency window in the extinction spectra of the localized surface plasmon. In this strong coupling regime a new quasi-particle, known as a plexciton, is expected to exhibit distinct properties, which exist in neither of the original particles. Our results demonstrate that 2D semiconductors hybridized with plasmonic structures not only hold great promise in the applications of energy-harvesting and light-emitting devices, but also provide an attractive platform for fundamental investigations of exciton-plasmon interactions in the strong coupling regime.Exciton-plasmon coupling in hybrids of a monolayer transition metal dichalcogenide and Ag nanoparticles is investigated in the weak and strong coupling regimes. In the weak coupling regime, both absorption enhancement and the Purcell effect collectively modify the photoluminescence properties of the semiconductor. In the strong coupling regime, electromagnetically induced transparency dips are displayed, evidencing coherent energy exchange between excitons and plasmons.

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate, which allows us to achieve high charge carrier (>1013 cm−2) densities. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities as low as 1 kΩ for monolayer and 420 Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm2 for all devices studied. The temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures.

Efficient Carrier-to-Exciton Conversion in Field Emission Tunnel Diodes Based on MIS-Type van der Waals Heterostack

We report on efficient carrier-to-exciton conversion and planar electroluminescence from tunnel diodes based on a metal-insulator-semiconductor (MIS) van der Waals heterostack consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer tungsten disulfide (WS2). These devices exhibit excitonic electroluminescence with extremely low threshold current density of a few pA·μm-2, which is several orders of magnitude lower compared to the previously reported values for the best planar EL devices. Using a reference dye, we estimate the EL quantum efficiency to be ∼1% at low current density limit, which is of the same order of magnitude as photoluminescence quantum yield at the equivalent excitation rate. Our observations reveal that the efficiency of our devices is not limited by carrier-to-exciton conversion efficiency but by the inherent exciton-to-photon yield of the material. The device characteristics indicate that the light emission is triggered by injection of hot minority carriers (holes) to n-doped WS2 by Fowler-Nordheim tunneling and that hBN serves as an efficient hole-transport and electron-blocking layer. Our findings offer insight into the intelligent design of van der Waals heterostructures and avenues for realizing efficient excitonic devices.