Shunsuke A. Sato

Attosecond band-gap dynamics in silicon

Electron transfer from valence to conduction band states in semiconductors is the basis of modern electronics. Here, attosecond extreme ultraviolet (XUV) spectroscopy is used to resolve this process in silicon in real time. Electrons injected into the conduction band by few-cycle laser pulses alter the silicon XUV absorption spectrum in sharp steps synchronized with the laser electric field oscillations. The observed ~450-attosecond step rise time provides an upper limit for the carrier-induced band-gap reduction and the electron-electron scattering time in the conduction band. This electronic response is separated from the subsequent band-gap modifications due to lattice motion, which occurs on a time scale of 60 ± 10 femtoseconds, characteristic of the fastest optical phonon. Quantum dynamical simulations interpret the carrier injection step as light-field–induced electron tunneling. Excited electrons in semiconducting silicon are tracked on a time scale faster than the lattice vibrations. [Also see Perspective by Spielmann] Watching electrons dart through silicon The ultimate speed limit in electronic circuitry is set by the motion of the electrons themselves. Schultze et al. applied attosecond spectroscopy to glimpse this motion in a sample of silicon, the semiconducting building block of modern integrated circuits (see the Perspective by Spielmann). The technique distinguished the electron dynamics—which proceed faster than a quadrillionth of a second after laser excitation—from the comparatively slower lattice motion of the silicon atomic nuclei. Science, this issue p. 1348; see also p. 1293

Attosecond nonlinear polarization and light-matter energy transfer in solids

Electric-field-induced charge separation (polarization) is the most fundamental manifestation of the interaction of light with matter and a phenomenon of great technological relevance. Nonlinear optical polarization produces coherent radiation in spectral ranges inaccessible by lasers and constitutes the key to ultimate-speed signal manipulation. Terahertz techniques have provided experimental access to this important observable up to frequencies of several terahertz. Here we demonstrate that attosecond metrology extends the resolution to petahertz frequencies of visible light. Attosecond polarization spectroscopy allows measurement of the response of the electronic system of silica to strong (more than one volt per ångström) few-cycle optical (about 750u2009nanometres) fields. Our proof-of-concept study provides time-resolved insight into the attosecond nonlinear polarization and the light-matter energy transfer dynamics behind the optical Kerr effect and multi-photon absorption. Timing the nonlinear polarization relative to the driving laser electric field with sub-30-attosecond accuracy yields direct quantitative access to both the reversible and irreversible energy exchange between visible-infrared light and electrons. Quantitative determination of dissipation within a signal manipulation cycle of only a few femtoseconds duration (by measurement and ab initio calculation) reveals the feasibility of dielectric optical switching at clock rates above 100 terahertz. The observed sub-femtosecond rise of energy transfer from the field to the material (for a peak electric field strength exceeding 2.5 volts per ångström) in turn indicates the viability of petahertz-bandwidth metrology with a solid-state device.

Attosecond dynamical Franz-Keldysh effect in polycrystalline diamond

Shining a fast light on diamonds Conceptually, the electronic structure of matter is a fixed scaffold of energy levels, which electrons climb with the help of light absorption. In reality, the lights electromagnetic field distorts the scaffold, a phenomenon that becomes increasingly evident with rising field intensity. Lucchini et al. studied a manifestation of this phenomenon, termed the dynamical Franz Keldysh effect, in diamond substrates exposed to sudden, moderately intense infrared fields. Using attosecond probe pulses and accompanying theoretical simulations, they resolved and accounted for the extremely rapid ensuing electron dynamics. Science, this issue p. 916 Attosecond spectroscopy probes shifts in the electronic state structure of diamond induced by an intense infrared field. Short, intense laser pulses can be used to access the transition regime between classical and quantum optical responses in dielectrics. In this regime, the relative roles of inter- and intraband light-driven electronic transitions remain uncertain. We applied attosecond transient absorption spectroscopy to investigate the interaction between polycrystalline diamond and a few-femtosecond infrared pulse with intensity below the critical intensity of optical breakdown. Ab initio time-dependent density functional theory calculations, in tandem with a two-band parabolic model, accounted for the experimental results in the framework of the dynamical Franz-Keldysh effect and identified infrared induction of intraband currents as the main physical mechanism responsible for the observations.

Ab initio simulation of electrical currents induced by ultrafast laser excitation of dielectric materials.

We theoretically investigate the generation of ultrafast currents in insulators induced by strong few-cycle laser pulses. Ab initio simulations based on time-dependent density functional theory give insight into the atomic-scale properties of the induced current signifying a femtosecond-scale insulator-metal transition. We observe the transition from nonlinear polarization currents during the laser pulse at low intensities to tunnelinglike excitation into the conduction band at higher laser intensities. At high intensities, the current persists after the conclusion of the laser pulse considered to be the precursor of the dielectric breakdown on the femtosecond scale. We show that the transferred charge sensitively depends on the orientation of the polarization axis relative to the crystal axis, suggesting that the induced charge separation reflects the anisotropic electronic structure. We find good agreement with very recent experimental data on the intensity and carrier-envelope phase dependence [A. Schiffrin et al., Nature (London) 493, 70 (2013).

Numerical pump-probe experiments of laser-excited silicon in nonequilibrium phase

S.A. Sato, K. Yabana, 1 Y. Shinohara, T. Otobe, and G.F. Bertsch Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan Center for Computational Sciences, University of Tsukuba, Tsukuba 305-8577, Japan Advanced Photon Research Center, JAEA, Kizugawa, Kyoto 619-0615, Japan Department of Physics and Institute for Nuclear Theory, University of Washington, Seattle 98195, U.S.A.

Femtosecond time-resolved dynamical Franz-Keldysh effect

We theoretically investigate the dynamical Franz-Keldysh effect in femtosecond time resolution, that is, the time-dependent modulation of a dielectric function at around the band gap under an irradiation of an intense laser field. We develop a pump-probe formalism in two distinct approaches: first-principles simulation based on real-time time-dependent density functional theory and analytic consideration of a simple two-band model. We find that, while time-average modulation may be reasonably described by the static Franz-Keldysh theory, a remarkable phase shift is found to appear between the dielectric response and the applied electric field.

Time-dependent density functional theory of high-intensity short-pulse laser irradiation on insulators

We calculate the energy deposition by very short laser pulses in SiO_2 (alpha-quartz) with a view to establishing systematics for predicting damage and nanoparticle production. The theoretical framework is time-dependent density functional theory, implemented by the real-time method in a multiscale representation. For the most realistic simulations we employ a meta-GGA Kohn-Sham potential similar to that of Becke and Johnson. We find that the deposited energy in the medium can be accurately modeled as a function of the local electromagnetic pulse fluence. The energy-deposition function can in turn be quite well fitted to the strong-field Keldysh formula for a range of intensities from below the melting threshold to well beyond the ablation threshold. We find reasonable agreement between the damage threshold and the energy required to melt the substrate. The ablation threshold estimated by the energy to convert the substrate to an atomic fluid is higher than the measurement, indicating significance of nonthermal nature of the process. A fair agreement is found for the depth of the ablation.

Ab initio multiscale simulation of high-order harmonic generation in solids

High-order-harmonic generation by a highly nonlinear interaction of infrared laser fields with matter allows for the generation of attosecond pulses in the XUV spectral regime. This process, well established for atoms, has been recently extended to the condensed phase. Remarkably well-pronounced harmonics up to order

Nonadiabatic generation of coherent phonons.

ensuremath{sim}30

Dielectric response of laser-excited silicon at finite electron temperature

have been observed for dielectrics. We establish a route toward an ab initio multiscale simulation of solid-state high-order-harmonic generation. We find that mesoscopic effects of the extended system, in particular the realistic sampling of the entire Brillouin zone, the pulse propagation in the dense medium, and the inhomogeneous illumination of the crystal, have a strong effect on the harmonic spectra. Our results provide an explanation for the formation of clean harmonics and have implications for a wide range of nonlinear optical processes in dense media.