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Featured researches published by Shunsuke Takimoto.


international solid-state circuits conference | 2007

A 1/2.7 inch Low-Noise CMOS Image Sensor for Full HD Camcorders

Hidekazu Takahashi; Tomoyuki Noda; Takashi Matsuda; Takanori Watanabe; Mahito Shinohara; Toshiaki Endo; Shunsuke Takimoto; Ryuuichi Mishima; Shigeru Nishimura; Katuhito Sakurai; Hiroshi Yuzurihara; Shunsuke Inoue

A 1/2.7 inch 1944times1092pixels CMOS image sensor with multi-gain column amplifier and double noise canceller is fabricated in a 0.18mum 1P3M CMOS process. It operates at 48MHz in a progressive scanning mode at 60fps. A 2T/pixel architecture and low optical stack with micro innerlens achieve 14.8ke<sup>-</sup>/1x-s sensitivity, 14ke<sup>-</sup> saturation, 3.7e<sup>-</sup> <sub>rms</sub> noise and 12.2e<sup>-</sup> dark current at 60degC.


international solid state circuits conference | 2007

A 1/2.7-in 2.96 MPixel CMOS Image Sensor With Double CDS Architecture for Full High-Definition Camcorders

Hidekazu Takahashi; Tomoyuki Noda; Takashi Matsuda; Takanori Watanabe; Mahito Shinohara; Toshiaki Endo; Shunsuke Takimoto; Ryuichi Mishima; Shigeru Nishimura; Katsuhito Sakurai; Hiroshi Yuzurihara; Shunsuke Inoue

A 1/2.7-in 1944 times 1484 pixel CMOS image sensor with double CDS architecture fabricated in a 0.18-mum single-poly triple-metal (1P3M) CMOS process is described. It operates at 48 MHz in a progressive scanning mode at 60 frames/s for full high-definition (HD) imaging. Two transistors/pixel architecture and low optical stack with double microlenses achieve 14.6 ke macr/1times ldr s sensitivity and 14 ke macr saturation. Double CDS architecture with a high-gain column amplifier realized a low noise floor of 3.5 e macrrms. Optimized shallow-trench isolation achieved very low dark current of 12.2 e macr/s (60degC). This image sensor also realizes low power consumption of 220 mW.


Archive | 2011

Photoelectric conversion device, method for producing photoelectric conversion device, and image pickup system

Takanori Watanabe; Tetsuya Itano; Hidekazu Takahashi; Shunsuke Takimoto; Kotaro Abukawa; Hiroaki Naruse; Shigeru Nishimura; Masatsugu Itahashi


Archive | 2008

Photoelectric-conversion apparatus and image-pickup system

Mineo Shimotsusa; Shigeru Nishimura; Shunsuke Takimoto


Archive | 2007

Photoelectric conversion device with a pixel region and a peripheral circuit region sharing a same substrate

Takanori Watanabe; Tetsuya Itano; Hidekazu Takahashi; Shunsuke Takimoto; Kotaro Abukawa; Hiroaki Naruse; Shigeru Nishimura; Masatsugu Itahashi


Archive | 2006

PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF, AND IMAGING SYSTEM

Kotaro Abukawa; Masaji Itabashi; Tetsuya Itano; Hiroaki Naruse; Shigeru Nishimura; Hidekazu Takahashi; Shunsuke Takimoto; Takanori Watanabe; 裕章 成瀬; 政次 板橋; 哲也 板野; 高典 渡邉; 俊介 滝本; 浩太郎 虻川; 茂 西村; 秀和 高橋


Archive | 2012

Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus

Takehito Okabe; Kentarou Suzuki; Taskashi Usui; Taro Kato; Mineo Shimotsusa; Shunsuke Takimoto


Archive | 2004

Photoelectric conversion device and image pickup system

Takanori Watanabe; Tetsuya Itano; Hidekazu Takahashi; Shunsuke Takimoto; Kotaro Abukawa; Hiroaki Naruse; Shigeru Nishimura; Masatsugu Itahashi


Archive | 2016

Method of manufacturing imaging apparatus

Toshiyuki Ogawa; Sho Suzuki; Shunsuke Takimoto


Archive | 2015

Method of manufacturing imaging apparatus having etched and planarized insulating layer

Toshiyuki Ogawa; Sho Suzuki; Shunsuke Takimoto

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