Shuyan Xu

Structural evolution of nanocrystalline silicon thin films synthesized in high-density, low-temperature reactive plasmas

Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using a silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 degrees C. The structural and optical properties of the deposited films are systematically investigated by Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/vis spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy. It is shown that the structure of the silicon thin films evolves from the purely amorphous phase to the nanocrystalline phase when the substrate temperature is increased from 100 to 150 degrees C. It is found that the variations of the crystalline fraction f(c), bonded hydrogen content C(H), optical bandgap E(Tauc), film microstructure and growth rate R(d) are closely related to the substrate temperature. In particular, at a substrate temperature of 300 degrees C, the nanocrystalline Si thin films of our interest feature a high growth rate of 1.63 nm s(-1), a low hydrogen content of 4.0 at.%, a high crystalline fraction of 69.1%, a low optical bandgap of 1.55 eV and an almost vertically aligned columnar structure with a mean grain size of approximately 10 nm. It is also shown that the low-temperature synthesis of nanocrystalline Si thin films without any hydrogen dilution is attributed to the outstanding dissociation ability of the high-density inductively coupled plasmas and effective plasma-surface interactions during the growth process. Our results offer a highly effective yet simple and environmentally friendly technique to synthesize high-quality nanocrystalline Si films, vitally needed for the development of new-generation solar cells and other emerging nanotechnologies.

Deterministic nanoassembly: Neutral or plasma route?

It is shown that, owing to selective delivery of ionic and neutral building blocks directly from the ionized gas phase and via surface migration, plasma environments offer a better deal of deterministic synthesis of ordered nanoassemblies compared to thermal chemical vapor deposition. The results of hybrid Monte Carlo (gas phase) and adatom self-organization (surface) simulation suggest that higher aspect ratios and better size and pattern uniformity of carbon nanotip microemitters can be achieved via the plasma route.

Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas: enabling nanocrystallinity at very low hydrogen dilution

Nanocrystalline silicon thin films were deposited on single-crystal silicon and glass substrates simultaneously by inductively coupled plasma-assisted chemical vapor deposition from the reactive silane reactant gas diluted with hydrogen at a substrate temperature of 200 °C. The effect of hydrogen dilution ratio X (X is defined as the flow rate ratio of hydrogen to silane gas), ranging from 1 to 20, on the structural and optical properties of the deposited films, is extensively investigated by Raman spectroscopy, X-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/VIS spectroscopy, and scanning electron microscopy. Our experimental results reveal that, with the increase of the hydrogen dilution ratio X, the deposition rate Rd and hydrogen content CH are reduced while the crystalline fraction Fc, mean grain size δ and optical bandgap ETauc are increased. In comparison with other plasma enhanced chemical vapor deposition methods of nanocrystalline silicon films where a very high hydrogen dilution ratio X is routinely required (e.g. X > 16), we have achieved nanocrystalline silicon films at a very low hydrogen dilution ratio of 1, featuring a high deposition rate of 1.57 nm/s, a high crystalline fraction of 67.1%, a very low hydrogen content of 4.4 at.%, an optical bandgap of 1.89 eV, and an almost vertically aligned columnar structure with a mean grain size of approximately 19 nm. We have also shown that a sufficient amount of atomic hydrogen on the growth surface essential for the formation of nanocrystalline silicon is obtained through highly-effective dissociation of silane and hydrogen molecules in the high-density inductively coupled plasmas.

Growth kinetics of carbon nanowall-like structures in low-temperature plasmas

The results of a hybrid numerical simulation of the growth kinetics of carbon nanowall-like nanostructures in the plasma and neutral gas synthesis processes are presented. The low-temperature plasma-based process was found to have a significant advantage over the purely neutral flux deposition in providing the uniform size distribution of the nanostructures. It is shown that the nanowall width uniformity is the best (square deviations not exceeding 1.05) in high-density plasmas of 3.0× 1018 m-3, worsens in lower-density plasmas (up to 1.5 in 1.0× 1017 m-3 plasmas), and is the worst (up to 1.9) in the neutral gas-based process. This effect has been attributed to the focusing of ion fluxes by irregular electric field in the vicinity of plasma-grown nanostructures on substrate biased with -20 V potential, and differences in the two-dimensional adatom diffusion fluxes in the plasma and neutral gas-based processes. The results of our numerical simulations are consistent with the available experimental reports on the effect of the plasma process parameters on the sizes and shapes of relevant nanostructures.

Self-organized nanoarrays : Plasma-related controls

The paper presents an investigation of self-organizational and -assembly processes of nanostructure growth on surfaces exposed to low-temperature plasmas. We have considered three main growth stages-initial, or sub-monolayer growth stage, separate nanostructure growth stage, and array growth stages with the characteristic sizes of several nm, several tens of nm, and several hundreds of nm, respectively, and have demonstrated, by the experimental data and hybrid multiscale numerical simulations, that the plasma parameters can strongly influence the surface processes and hence the kinetics of self-organization and -assembly. Our results show that plasma-controlled self-organization is a promising way to assemble large regular arrays of nanostructures.

High-Efficiency Silicon Solar Cells—Materials and Devices Physics

High-efficiency Si solar cells have attracted great attention from researchers, scientists, engineers of photovoltaic (PV) industry for the past few decades. Many researchers, scientists, and engineers in both academia and industry seek solutions to improve the cell efficiency and reduce the cost. This desire has drawn stronger support from major funding agencies and industry and stimulated a growing number of major research and research infrastructure programs, and a rapidly increasing number of publications in this filed. This article reviews materials, devices, and physics of high-efficiency Si solar cells developed over the last 20 years and presents representative examples of superior performances and competitive advantages. In this paper there is a fair number of topics, not only from the material viewpoint, introducing various materials that are required for high-efficiency Si solar cells, such as base materials (FZ-Si, CZ-Si, MCZ-Si, and multi-Si), emitter materials (diffused emitter and deposited emitter), passivation materials (Al-BSF, high-low junction, SiO2, SiOx, SiNx, Al2O3 and a-Si:H), and other functional materials (antireflective layer, transparent conductive oxide and metal electrode), but also from the device and physics point of view, elaborating on physics, cell concept, development, and status of most types of high-efficiency Si solar cells, including passivated emitter and rear contact (PERC), passivated emitter and rear locally diffused (PERL), passivated emitter and rear totally-diffused (PERT), Pluto, PANDA, interdigitated back-contacted (IBC), emitter-wrap-through (EWT), metallization-wrap-through (MWT), heterojunction with intrinsic thin-layer (HIT), and so on. Finally, the technical data of these high-efficiency Si solar cells has been tabulated.

Hierarchical Multicomponent Inorganic Metamaterials: Intrinsically Driven Self‐Assembly at the Nanoscale

Increasingly intricate in their composition and structural organization, hierarchical multicomponent metamaterials with nonlinear spatially reconfigurable functionalities challenge the intrinsic constraints of natural materials, revealing tremendous potential for the advancement of biochemistry, nanophotonics, and medicine. Recent breakthroughs in high-resolution nanofabrication utilizing ultranarrow, precisely controlled ion or laser beams have enabled assembly of architectures of unprecedented structural and functional complexity, yet costly, time- and energy-consuming high-resolution sequential techniques do not operate effectively at industry-required scale. Inspired by the fictional Baron Munchausens fruitless attempt to pull himself up, it is demonstrated that metamaterials can undergo intrinsically driven self-assembly, metaphorically pulling themselves up into existence. These internal drivers hold a key to unlocking the potential of metamaterials and mapping a new direction for the large-area, cost-efficient self-organized fabrication of practical devices. A systematic exploration of these efforts is presently missing, and the driving forces governing the intrinsically driven self-assembly are yet to be fully understood. Here, recent progress in the self-organized formation and self-propelled growth of complex hierarchical multicomponent metamaterials is reviewed, with emphasis on key principles, salient features, and potential limitations of this family of approaches. Special stress is placed on self-assembly driven by plasma, current in liquid, ultrasonic, and similar highly energetic effects, which enable self-directed formation of metamaterials with unique properties and structures.

Plasma-aided fabrication in Si-based photovoltaic applications: an overview

Plasma-aided fabrication has been largely employed in the photovoltaic industry and widely reported in the literature for the growth of Si-based solar cells and the dry etching of Si substrates. This paper reviews the current status of plasma technologies for the synthesis of Si-based thin films (including silicon nitride: SiN) and solar cells, removal of phosphorus silicate glass or parasitic emitters, wafer cleaning, masked or mask-free surface texturization and the direct formation of a p–n junction by means of p-to-n type conductivity conversion. The plasma physics and chemistry involved in these processes and their fundamental mechanisms are briefly discussed. Some examples of superior performance and competitive advantages of plasma processes and techniques are selected to represent a range of applications for solar cells. Finally, an outlook in the field of plasma-aided fabrication for photovoltaic applications is given.

Space micropropulsion systems for Cubesats and small satellites: From proximate targets to furthermost frontiers

Rapid evolution of miniaturized, automatic, robotized, function-centered devices has redefined space technology, bringing closer the realization of most ambitious interplanetary missions and intense near-Earth space exploration. Small unmanned satellites and probes are now being launched in hundreds at a time, resurrecting a dream of satellite constellations, i.e., wide, all-covering networks of small satellites capable of forming universal multifunctional, intelligent platforms for global communication, navigation, ubiquitous data mining, Earth observation, and many other functions, which was once doomed by the extraordinary cost of such systems. The ingression of novel nanostructured materials provided a solid base that enabled the advancement of these affordable systems in aspects of power, instrumentation, and communication. However, absence of efficient and reliable thrust systems with the capacity to support precise maneuvering of small satellites and CubeSats over long periods of deployment remains a real stumbling block both for the deployment of large satellite systems and for further exploration of deep space using a new generation of spacecraft. The last few years have seen tremendous global efforts to develop various miniaturized space thrusters, with great success stories. Yet, there are critical challenges that still face the space technology. These have been outlined at an inaugural International Workshop on Micropropulsion and Cubesats, MPCS-2017, a joint effort between Plasma Sources and Application Centre/Space Propulsion Centre (Singapore) and the Micropropulsion and Nanotechnology Lab, the G. Washington University (USA) devoted to miniaturized space propulsion systems, and hosted by CNR-Nanotec—P.Las.M.I. lab in Bari, Italy. This focused review aims to highlight the most promising developments reported at MPCS-2017 by leading world-reputed experts in miniaturized space propulsion systems. Recent advances in several major types of small thrusters including Hall thrusters, ion engines, helicon, and vacuum arc devices are presented, and trends and perspectives are outlined.

Amorphous/crystalline silicon heterojunction solar cells via remote inductively coupled plasma processing.

Low-frequency inductively coupled plasma (ICP) has been widely used to deposit amorphous or microcrystalline Si thin films, but the intrinsic drawback namely ion bombardment effect limits its application in Si heterojunction solar cells. In this letter, we redesigned typical ICP and realized a remote plasma deposition with suppressed ion bombardment effect. This remote ICP system enables the synthesis of high quality amorphous Si layers with a compact network and a high hydrogen content (10.5%). By using this remote ICP system, we achieved amorphous/crystalline silicon heterojunction solar cells with an efficiency of 14.1% without any back surface field or textures.