Siamak Abedinpour
University of Illinois at Urbana–Champaign
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Publication
Featured researches published by Siamak Abedinpour.
ieee industry applications society annual meeting | 2000
Siamak Abedinpour; M. Trivedi; K. Shenai
With the increasing drive towards compactness and portability, there is a need for high power density power supplies. This paper presents a power supply suitable for monolithic implementation. A 5 V-10 V boost converter has been designed using 1.2 /spl mu/m Hewlett-Packard and 0.25 /spl mu/m SOI MITLL CMOS process technology. Design considerations, simulation and experimental results and layout of the power supply are presented. The power supply meets the design specifications over a reasonable span of input voltage and output load variations.
ieee international caracas conference on devices circuits and systems | 2000
Siamak Abedinpour; K. Shenai
Reviews the requirements of power electronics applications in electric utilities, transportation, aerospace, heavy industry and commercial electrical appliances for the new millennium. In particular, material and device technologies on silicon and wide band-gap semiconductors are discussed, along with switching circuits and topologies. Component- and system-level simulation, modeling and CAD requirements are evaluated. System-level optimization is essential in order to develop robust power systems at affordable cost.
ieee industry applications society annual meeting | 2001
Siamak Abedinpour; R. Burra; K. Shenai
This paper presents the MOSFET electrical stresses in a full bridge (FB) ZVS DC-DC converter with a detailed study of the MOSFET body diode reverse recovery stress under normal and low load operating conditions. Experimental results are presented under normal and low load operation for a 350 V-3.5 V, 225 A FB ZVS DC-DC converter. Two-dimensional (2-D) numerical simulation results of internal dynamics of the device during switching prove that the MOSFET body diode reverse recovery under no load conditions is stressful as opposed to the reverse recovery under normal operating condition. A test circuit is also designed to characterize the body diode reverse recovery performance. A detailed failure analysis for the MOSFETs failed in the reverse recovery test circuit under high stress conditions is also presented.
Archive | 2002
Krishna Shenai; Siamak Abedinpour
Archive | 2002
K. Shenai; Siamak Abedinpour
Archive | 2002
K. Shenai; Siamak Abedinpour
Archive | 2002
K. Shenai; Siamak Abedinpour
Drug Discovery Today | 2000
Siamak Abedinpour; Ruey-Wen Liu; G. Fasulloe; K. Shenai
Archive | 2002
K. Shenai; Siamak Abedinpour
Archive | 2002
K. Shenai; Siamak Abedinpour