Manuela Göbelt

Interfacing transitions of different alkali atoms and telecom bands using one narrowband photon pair source

Quantum information technology strongly relies on coupling of optical photons with narrowband quantum systems, such as quantum dots, color centers, and atomic systems. This coupling requires matching the optical wavelength and bandwidth to the desired system, which presents a considerable problem for most available sources of quantum light. Here we demonstrate coupling of alkali dipole transitions with a tunable source of photon pairs. Our source is based on spontaneous parametric down-conversion in a triply-resonant whispering-gallery mode resonator. For this, we have developed novel wavelength tuning mechanisms, which allow for a coarse tuning to either cesium or rubidium wavelength with subsequent continuous fine-tuning to the desired transition. As a demonstration of the functionality of the source, we performed a heralded single photon measurement of the atomic decay. We present a major advance in controlling the spontaneous down-conversion process, which makes our bright source of single photons now compatible with a plethora of narrow-band resonant systems.

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.

Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal–Organic Vapor Phase Epitaxy

Vertically aligned hexagonal InN nanorods were grown mask-free by conventional metal-organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the nanorods indicate a self-catalytic vapor-liquid-solid growth mode. A systematic study on important growth parameters has been carried out for the optimization of nanorod morphology. The nanorod N-polarity, induced by high temperature nitridation of the sapphire substrate, is necessary to achieve vertical growth. Hydrogen, usually inapplicable during InN growth due to formation of metallic indium, and silane are needed to enhance the aspect ratio and to reduce parasitic deposition beside the nanorods on the sapphire surface. The results reveal many similarities between InN and GaN nanorod growth showing that the process despite the large difference in growth temperature is similar. Transmission electron microscopy, spatially resolved energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been performed to analyze the structural properties. Spatially resolved cathodoluminescence investigations are carried out to verify the optical activity of the InN nanorods. The InN nanorods are expected to be the material of choice for high-efficiency hot carrier solar cells.

Modeling the dielectric function of degenerately doped ZnO:Al thin films grown by ALD using physical parameters

Transparent conductive thin films are a key building block of modern optoelectronic devices. A promising alternative to expensive indium containing oxides is aluminum doped zinc oxide (AZO). By correlating spectroscopic ellipsometry and photoluminescence, we analyzed the contributions of different optical transitions in AZO grown by atomic layer deposition to a model dielectric function (MDF) over a wide range of photon energies. The derived MDF reflects the effects of the actual band structure and therefore describes the optical properties very accurately. The presented MDF is solely based on physically meaningful parameters in contrast to empirical models like e.g. the widely used Sellmeier equation, but nevertheless real and imaginary parts are expressed as closed-form expressions. We analyzed the influence of the position of the Fermi energy and the Fermi-edge singularity to the different parts of the MDF. This information is relevant for design and simulation of optoelectronic devices and can be determined by analyzing the results from spectroscopic ellipsometry.

Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques

High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3-ZnO core-shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence. Moreover, a model system based on the obtained results has been provided explaining the formation mechanism of the ZnGa2O4 NWs.

Low temperature solid-state wetting and formation of nanowelds in silver nanowires

This article focuses on the microscopic mechanism of thermally induced nanoweld formation between silver nanowires (AgNWs) which is a key process for improving electrical conductivity in NW networks employed for transparent electrodes. Focused ion beam sectioning and transmission electron microscopy were applied in order to elucidate the atomic structure of a welded NW including measurement of the wetting contact angle and characterization of defect structure with atomic accuracy, which provides fundamental information on the welding mechanism. Crystal lattice strain, obtained by direct evaluation of atomic column displacements in high resolution scanning transmission electron microscopy images, was shown to be non-uniform among the five twin segments of the AgNW pentagonal structure. It was found that the pentagonal cross-sectional morphology of AgNWs has a dominant effect on the formation of nanowelds by controlling initial wetting as well as diffusion of Ag atoms between the NWs. Due to complete solid-state wetting, at an angle of ∼4.8°, the welding process starts with homoepitaxial nucleation of an initial Ag layer on (100) surface facets, considered to have an infinitely large radius of curvature. However, the strong driving force for this process due to the Gibbs-Thomson effect, requires the NW contact to occur through the corner of the pentagonal cross-section of the second NW providing a small radius of curvature. After the initial layer is formed, the welded zone continues to grow and extends out epitaxially to the neighboring twin segments.

Silicon Nanowire Based Thin Film Solar Cell Concepts on Glass for the >15% Era

Nanoarchitectures for solar energy conversion are developed, characterized and integrated in device concepts. In particular thin film solar cells based on silicon nanostructures are proposed which have the potential for >15% efficiencies.