Simon M. Sze

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohms law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

In this letter, a double-active-layer <formula formulatype=inline><tex Notation=TeX>

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

({rm Zr}{:}{rm SiO}_{x}/{rm C}{:}{rm SiO}_{x})

Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical

</tex></formula> resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the <formula formulatype=inline><tex Notation=TeX>

\hbox{CO}_{2}

{rm C}{:}{rm SiO}_{x}

Fluid Treatment

</tex></formula> layer. It can be observed that <formula formulatype=inline><tex Notation=TeX>

Low Temperature Improvement Method on

{rm Zr}{:}{rm SiO}_{x}/{rm C}{:}{rm SiO}_{x}

{\rm Zn{:}SiO}_{x}

</tex></formula> structure has superior switching performance and higher stability compared with the single-active-layer <formula formulatype=inline><tex Notation=TeX>

Resistive Random Access Memory Devices

({rm Zr}{:}{rm SiO}_{x})

Asymmetric Carrier Conduction Mechanism by Tip Electric Field in

</tex></formula> structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. <formula formulatype=inline><tex Notation=TeX>