Simon R. Phillpot

Nanoscale thermal transport

Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

Mechanisms of heat flow in suspensions of nano-sized particles (nanofluids)

Recent measurements on nanofluids have demonstrated that the thermal conductivity increases with decreasing grain size. However, such increases cannot be explained by existing theories. We explore four possible explanations for this anomalous increase: Brownian motion of the particles, molecular-level layering of the liquid at the liquid/particle interface, the nature of heat transport in the nanoparticles, and the effects of nanoparticle clustering. We show that the key factors in understanding thermal properties of nanofluids are the ballistic, rather than diffusive, nature of heat transport in the nanoparticles, combined with direct or fluid-mediated clustering effects that provide paths for rapid heat transport.

Exact method for the simulation of Coulombic systems by spherically truncated, pairwise r−1 summation

Based on a recent result showing that the net Coulomb potential in condensed ionic systems is rather short ranged, an exact and physically transparent method permitting the evaluation of the Coulomb potential by direct summation over the r−1 Coulomb pair potential is presented. The key observation is that the problems encountered in determining the Coulomb energy by pairwise, spherically truncated r−1 summation are a direct consequence of the fact that the system summed over is practically never neutral. A simple method is developed that achieves charge neutralization wherever the r−1 pair potential is truncated. This enables the extraction of the Coulomb energy, forces, and stresses from a spherically truncated, usually charged environment in a manner that is independent of the grouping of the pair terms. The close connection of our approach with the Ewald method is demonstrated and exploited, providing an efficient method for the simulation of even highly disordered ionic systems by direct, pairwise r−1...

Nanoscale thermal transport. II. 2003–2012

A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ∼1 nm, the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interface...

Thermal barrier coating materials

Improved thermal barrier coatings (TBCs) will enable future gas turbines to operate at higher gas temperatures. Considerable effort is being invested, therefore, in identifying new materials with even better performance than the current industry standard, yttria-stabilized zirconia (YSZ). We review recent progress and suggest that an integrated strategy of experiment, intuitive arguments based on crystallography, and simulation may lead most rapidly to the development of new TBC materials.

Deformation twinning in nanocrystalline Al by molecular-dynamics simulation

Abstract We use a recently developed, massively parallel molecular-dynamics code for the simulation of polycrystal plasticity to elucidate the intricate interplay between dislocation and GB processes during room-temperature plastic deformation of model nanocrystalline-Al microstructures. Our simulations reveal that under relatively high stresses (of 2.5 GPa) and large plastic strains (of ~12%), extensive deformation twinning takes place, in addition to deformation by the conventional dislocation-slip mechanism. Both heterogeneous and homogeneous nucleation of deformation twins is observed. The heterogeneous mechanism involves the successive emission of Shockley partials from the grain boundaries onto neighboring slip planes. By contrast, the homogeneous process takes place in the grain interiors, by a nucleation mechanism involving the dynamical overlap of the stacking faults of intrinsically and/or extrinsically dissociated dislocations. Our simulations also reveal the mechanism for the formation of a new grain, via an intricate interplay between deformation twinning and dislocation nucleation from the grain boundaries during the deformation. The propensity for deformation twinning observed in our simulations is surprising, given that the process has never been observed in coarse-grained Al and that the well-known pole mechanism cannot operated for such a small grain size. It therefore appears that the basic models for deformation twinning should be extended with particular emphasis on the role of grain-boundary sources in nanocrystalline materials.

Length-scale effects in the nucleation of extended dislocations in nanocrystalline Al by molecular-dynamics simulation

The nucleation of extended dislocations from the grain boundaries in nanocrystalline aluminum is studied by molecular-dynamics simulation. The length of the stacking fault connecting the two Shockley partials that form the extended dislocation, i.e., the dislocation splitting distance, rsplit, depends not only on the stacking-fault energy but also on the resolved nucleation stress. Our simulations for columnar grain microstructures with a grain diameter, d, of up to 70 nm reveal that the magnitude of rsplit relative to d represents a critical length scale controlling the low-temperature mechanical behavior of nanocrystalline materials. For rsplit>d, the first partials nucleated from the boundaries glide across the grains and become incorporated into the boundaries on the opposite side, leaving behind a grain transected by a stacking fault. By contrast, for rsplit<d two Shockley partials connected by a stacking fault are emitted consecutively from the boundary, leading to a deformation microstructure similar to that of coarse-grained aluminum. The mechanical properties of nanocrystalline materials, such as the yield stress, therefore depend critically on the grain size.

Grain-boundary diffusion creep in nanocrystalline palladium by molecular-dynamics simulation

Molecular-dynamics (MD) simulations of fully three-dimensional (3D), model nanocrystalline face-centered cubic metal microstructures are used to study grain-boundary (GB) diffusion creep, one mechanism considered to contribute to the deformation of nanocrystalline materials. To overcome the well-known limitations associated with the relatively short time interval used in our MD simulation (typically <10−8 s), our simulations are performed at elevated temperatures where the distinct effects of GB diffusion are clearly identifiable. In order to prevent grain growth and thus to enable steady-state diffusion creep to be observed, our input microstructures were tailored to (1) have a uniform grain shape and a uniform grain size of nm dimensions and (2) contain only high-energy GBs which are known to exhibit rather fast, liquid-like self-diffusion. Our simulations reveal that under relatively high tensile stresses these microstructures, indeed, exhibit steady-state diffusion creep that is homogeneous, with a strain rate that agrees quantitatively with that given by the Coble-creep formula. The grain-size scaling of the Coble creep is found to decrease from d−3 to d−2 when the grain diameter becomes of the order of the GB width. For the first time a direct observation of the grain-boundary sliding as an accommodation mechanism for the Coble creep, known as Lifshitz sliding, is reported.

Mechanisms of grain growth in nanocrystalline fcc metals by molecular-dynamics simulation.

To elucidate the mechanisms of grain growth in nanocrystalline fcc metals, we have performed fully three-dimensional molecular-dynamics simulations with a columnar grain structure and an average grain diameter of 15 nm. Based on the study of coarse-grained materials, the conventional picture is that grain growth is governed by curvature-driven grain-boundary migration. However, our simulations reveal that in a nanocrystalline material grain rotations play an equally important role, at least during the early stages of grain growth. By eliminating the grain boundary between neighboring grains, such rotations lead to grain coalescence and the consequent formation of highly elongated grains. A detailed analysis exposes an intricate coupling between this mechanism and the conventional grain-boundary-migration dominated mechanism. Incorporation of these insights into mesoscopic models should enable more realistic mesoscopic simulations of grain growth in nanocrystalline materials. (A short movie showing the overall evolution of the grain microstructure can be viewed at http://www.msd.anl.gov/im/movies/graingrowth.html.)

Phonon wave-packet dynamics at semiconductor interfaces by molecular-dynamics simulation

We directly observe phonon wave packets of well-defined frequency and polarization scattering at a coherent semiconductor interface using molecular-dynamics simulations. We find that in the low-frequency limit the transmission coefficients of both longitudinal and transverse acoustic phonons agree well with those predicted by the continuum-level based acoustic mismatch model. However, the transmission coefficients rapidly decrease close to the cutoff frequency, a result that can be understood within a simple one-dimensional discrete atomic-chain model. We also find that the transmission coefficient for transverse acoustic phonons depends strongly on the relative orientation of the polarization and the Si-Si bonds in the diamond lattice structure.