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Dive into the research topics where Slawomir Prucnal is active.

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Featured researches published by Slawomir Prucnal.


Applied Physics Letters | 2011

Rise and fall of defect induced ferromagnetism in SiC single crystals

Lin Li; Slawomir Prucnal; S.D. Yao; K. Potzger; W. Anwand; A. Wagner; Shengqiang Zhou

6H–SiC (silicon carbide) single crystals containing VSi–VC divacancies are investigated with respect to magnetic and structural properties. We found that an initial increase in structural disorder leads to pronounced ferromagnetic properties at room temperature. Further introduction of disorder lowers the saturation magnetization and is accompanied with the onset of lattice amorphization. Close to the threshold of full amorphization, also divacancy clusters are formed and the saturation magnetization nearly drops to zero.


Scientific Reports | 2016

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

Slawomir Prucnal; Fang Liu; M. Voelskow; Lasse Vines; L. Rebohle; Denny Lang; Yonder Berencén; Stefan Andric; Roman Boettger; Manfred Helm; Shengqiang Zhou; W. Skorupa

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.


Scientific Reports | 2015

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Shengqiang Zhou; Fang Liu; Slawomir Prucnal; Kun Gao; M. Khalid; C. Baehtz; M. Posselt; W. Skorupa; Manfred Helm

Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of ~ 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability.


Nano Letters | 2011

n-InAs nanopyramids fully integrated into silicon.

Slawomir Prucnal; Stefan Facsko; Christine Baumgart; Heidemarie Schmidt; Maciej Oskar Liedke; L. Rebohle; Artem Shalimov; Helfried Reuther; A. Kanjilal; A. Mücklich; Manfred Helm; J. Zuk; W. Skorupa

InAs with an extremely high electron mobility (up to 40,000 cm(2)/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a combined hot ion implantation and millisecond flash lamp annealing techniques. Conventional selective etching was used to form the InAs/Si heterojunction. The current-voltage measurement confirms the heterojunction diode formation with the ideality factor of η = 4.6. Kelvin probe force microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.


Physical Review B | 2014

Disentangling defect-induced ferromagnetism in SiC

Yutian Wang; Lin Li; Slawomir Prucnal; Xuliang Chen; Wei Tong; Zhaorong Yang; Frans Munnik; K. Potzger; W. Skorupa; Sibylle Gemming; Manfred Helm; Shengqiang Zhou

1. Institute of Ion Beam Physics and Materials Research,Helmholtz-Zentrum Dresden-Rossendorf(HZDR),P.O.Box 510119,01314 Dresden,Germany2. Department of Physics and Electronics, School of Science,Beijing University of Chemical Technology, Beijing 100029, China3. Key Laboratory of Materials Physics,Institute of Solid State Physics, Chinese Academy of Sciences,Hefei 230031, People’s Republic of China4. Technische Universita¨t Dresden, 01062 Dresden, Germany and5. High Magnetic Field Laboratory, Hefei Institutes of Physical Science,Chinese Academy of Sciences, Hefei 230031, People’s Republic of ChinaWe present a detailed investigation of the magnetic properties in SiC single crystals bom-barded with Neon ions. Through careful measuring the magnetization of virgin and irra-diated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagneticand ferromagnetic contributions. The ferromagnetic contribution persists well above roomtemperature and exhibits a pronounced magnetic anisotropy. We qualitatively explain themagnetic properties as a result of the intrinsic clustering tendency of defects.


Applied Physics Letters | 2014

Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing

Slawomir Prucnal; Kun Gao; Shengqiang Zhou; Jiada Wu; Hua Cai; Ovidiu D. Gordan; D. R. T. Zahn; G. Larkin; Manfred Helm; W. Skorupa

Zinc oxide thin film is one of the most promising candidates for the transparent conductive layer in microelectronic and photovoltaic applications, due to its low resistivity and high transmittance in the visible spectral range. In this letter, we present optoelectronic and structural properties of fluorine doped ZnO films deposited at low temperature on a silicon substrate. The fluorine doping was made by post-deposition SF6 plasma treatment and activation by the millisecond range flash lamp annealing. Both the microstructural and optical investigations confirm the formation of a high-quality, highly doped n-type ZnO layer. The current-voltage characteristics show a heterojunction between n+-ZnO and Si. Moreover, it is shown that the SF6 plasma treatment efficiently passivates the surface state and bulk defects in the ZnO film.


Applied Physics Letters | 2014

Ge1−xSnx alloys synthesized by ion implantation and pulsed laser melting

Kun Gao; Slawomir Prucnal; R. Huebner; C. Baehtz; I. Skorupa; Yutian Wang; W. Skorupa; Manfred Helm; Shengqiang Zhou

The tunable bandgap and the high carrier mobility of Ge1−xSnx alloys stimulate a large effort for bandgap and strain engineering for Ge based materials using silicon compatible technology. In this Letter, we present the fabrication of highly mismatched Ge1−xSnx alloys by ion implantation and pulsed laser melting with Sn concentration ranging from 0.5 at. % up to 1.5 at. %. According to the structural investigations, the formed Ge1−xSnx alloys are monocrystalline with high Sn-incorporation rate. The shrinkage of the bandgap of Ge1−xSnx alloys with increasing Sn content is proven by the red-shift of the E1 and E1 + Δ1 critical points in spectroscopic ellipsometry. Our investigation provides a chip technology compatible route to prepare high quality monocrystalline Ge1−xSnx alloys.


Nano Research | 2014

III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy

Slawomir Prucnal; Markus Glaser; Alois Lugstein; Emmerich Bertagnolli; Michael Stöger-Pollach; Shengqiang Zhou; Manfred Helm; Denis Reichel; L. Rebohle; M. Turek; J. Zuk; W. Skorupa

AbstractDirect integration of high-mobility III–V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor (CMOS) processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III–V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.


Journal of Applied Physics | 2016

The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures

Per Lindberg; F. Lipp Bregolin; K. Wiesenhütter; U. Wiesenhütter; Heine N. Riise; Lasse Vines; Slawomir Prucnal; W. Skorupa; B. G. Svensson; Edouard Monakhov

The effect of millisecond flash lamp annealing (FLA) on aluminum doped ZnO (AZO) films and their interface with Si have been studied. The AZO films were deposited by magnetron sputtering on Si (100) substrates. The electrical and structural properties of the film and AZO/Si structures were characterized by current–voltage, capacitance–voltage, and deep level transient spectroscopy measurements, X-ray diffraction, and secondary ion mass spectrometry. The resistivity of the AZO film is reduced to a close to state-of-the-art value of 2 × 10−4 Ω cm after FLA for 3 ms with an average energy density of 29 J/cm2. In addition, most of the interfacial defects energy levels are simultaneously annealed out, except for one persisting shallow level, tentatively assigned to the vacancy-oxygen complex in Si, which was not affected by FLA. Subsequent to the FLA, the samples were treated in N2 or forming gas (FG) (N2/H2, 90/10%mole) ambient at 200–500 °C. The latter samples maintained the low resistivity achieved after th...


Journal of Applied Physics | 2014

Hydrogen engineering via plasma immersion ion implantation and flash lamp annealing in silicon-based solar cell substrates

F. L. Bregolin; K. Krockert; Slawomir Prucnal; Lasse Vines; René Hübner; B. G. Svensson; K. Wiesenhütter; H.-J. Möller; W. Skorupa

Higher conversion efficiencies while reducing costs at the same time is the ultimate goal driving the advancement of solar cell development. In this work, solar cell emitters are formed in Si substrates by plasma immersion ion implantation (PIII) of phosphine and posterior millisecond-range flash lamp annealing (FLA). In Si-based solar cells, hydrogen plays a fundamental role due to its excellent passivation properties. The optical and electrical properties of the fabricated emitters will be studied, with particular interest in their dependence on the hydrogen content present in the samples. The influence of different FLA annealing parameters and a comparison with traditional thermal treatments such as rapid thermal annealing (RTA) and furnace annealing (FA) will be presented. The samples treated by FLA at 1200 °C for 20 ms in forming gas show sheet resistance values of the order of 60 Ω/◻, and minority carrier diffusion lengths in the range of ∼200 μm without the use of a capping layer for surface passiv...

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W. Skorupa

Helmholtz-Zentrum Dresden-Rossendorf

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Manfred Helm

Helmholtz-Zentrum Dresden-Rossendorf

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Shengqiang Zhou

Helmholtz-Zentrum Dresden-Rossendorf

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L. Rebohle

Helmholtz-Zentrum Dresden-Rossendorf

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René Hübner

Helmholtz-Zentrum Dresden-Rossendorf

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Roman Böttger

Helmholtz-Zentrum Dresden-Rossendorf

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Ye Yuan

Helmholtz-Zentrum Dresden-Rossendorf

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R. Heller

Helmholtz-Zentrum Dresden-Rossendorf

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Yonder Berencén

Helmholtz-Zentrum Dresden-Rossendorf

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Fang Liu

Helmholtz-Zentrum Dresden-Rossendorf

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