Sneha G. Pandya

Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation

Nanoparticles (NPs) of indium antimonide (InSb) were synthesized using a vapor phase synthesis technique known as inert gas condensation (IGC). NPs were directly deposited, at room temperature and under high vacuum, on glass cover slides, TEM grids and (111) p-type silicon wafers. TEM studies showed a bimodal distribution in the size of the NPs with average particle size of 13.70 nm and 33.20 nm. The Raman spectra of InSb NPs exhibited a peak centered at 184.27 cm−1, which corresponds to the longitudinal optical (LO) modes of phonon vibration in InSb. A 1:1 In-to-Sb composition ratio was confirmed by energy dispersive X-ray (EDX). X-ray diffractometer (XRD) and high-resolution transmission electron microscopy (HRTEM) studies revealed polycrystalline behavior of these NPs with lattice spacing around 0.37 and 0.23 nm corresponding to the growth directions of (111) and (220), respectively. The average crystallite size of the NPs obtained using XRD peak broadening results and the Debye-Scherrer formula was 25.62 nm, and the value of strain in NPs was found to be 0.0015. NP’s band gap obtained using spectroscopy and Fourier transform infrared (FTIR) spectroscopy was around 0.43–0.52 eV at 300 K, which is a blue shift of 0.26–0.35 eV. The effects of increased particle density resulting into aggregation of NPs are also discussed in this paper.

Erbium doped aluminum nitride nanoparticles for nano-thermometer applications

We have synthesized nanoparticles (NPs) of aluminum nitride (AlN) doped in situ with erbium (Er) using the inert gas condensation technique. These NPs have optical properties that make them good candidates for nanoscale temperature sensors. The photoluminescence (PL) spectrum of Er3+ in these NPs shows two emission peaks in the green region at around 540 and 560 nm. The ratio of the intensities of these luminescence peaks is related to temperature. Using Boltzmanns distribution, the temperature of the NP and its surrounding can be calculated. The NPs were directly deposited on (111) p-type silicon wafers, transmission electron microscope grids and glass cover slips. XRD and HRTEM study indicates that most of the NPs have crystalline hexagonal AlN structure. An enhancement of the luminescence from these NPs was observed after heating in-air at 770 K for 3 h. The sample was then heated in air using a scanning optical microscope laser. The corresponding change in PL peak intensities of the NPs was recorded for laser powers ranging from 0.2 to 15.1 mW. Temperature calculated using the Boltzmanns distribution was in the range of 300–470 K. This temperature range is of interest for semiconductor device heating and for thermal treatment of cancerous cells, for example.