Somnath Bhowmick

Electric field induced gap modification in ultrathin blue phosphorus

We investigate the possibility of band structure engineering in the recently predicted 2D layered form of blue phosphorus via an electric field

Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene

({mathrm{E}}_{z})

Effective Doping of Monolayer Phosphorene by Surface Adsorption of Atoms for Electronic and Spintronic Applications

applied perpendicular to the layer(s). Using density functional theory, we study the effect of a transverse electric field in monolayer as well as three differently stacked bilayer structures of blue phosphorus. We find that for

Ferromagnetism in α-Mn nanorods

{mathrm{E}}_{z}g0.2

Powder metallurgical processing of equiatomic AlCoCrFeNi high entropy alloy: Microstructure and mechanical properties

V/AA{} the direct energy gap at the

First-principles cluster expansion study of functionalization of black phosphorene via fluorination and oxidation

ensuremath{Gamma}

Polymorphs of two dimensional phosphorus and arsenic: insight from an evolutionary search

point, which is much larger than the default indirect band gap of mono- and bilayer blue phosphorus, decreases linearly with the increasing electric field, becomes comparable to the default indirect band gap at

Ab-initio study of doping versus adsorption in monolayer M0S2

{mathrm{E}}_{z}ensuremath{approx}0.45(0.35)

Strain Dependent Carrier Mobility in 8 − Pmmn Borophene: ab-initio study

V/AA{} for monolayer (bilayers), and decreases further until the semiconductor to metal transition of 2D blue phosphorus takes place at

Significant Enhancement of the Stark Effect in Rippled Monolayer Blue Phosphorus

{mathrm{E}}_{z}ensuremath{approx}0.7(0.5)