Song Yin

Synthesis and photoluminescence properties of In2Ge2O7 nanobelts

Large-scale In2Ge2O7 nanobelts were successfully synthesized by a simple thermal evaporation method without the presence of catalyst. The process of growth of the ternary In2Ge2O7 nanobelts is based on the vapour?solid growth mechanism. Its morphology and microstructures were determined by scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence spectroscopy. The as-synthesized In2Ge2O7 products are single crystals with a monoclinic thortveitite-type structure growing along the [210] direction. The nanobelts have widths of 300?500?nm, thickness of 50?70?nm and lengths ranging from several tens to several hundreds of micrometres. A strong and broad violet emission peak at about 410?nm was observed in the room temperature photoluminescence measurements.

Preparation and Photoluminescence of ZnO Comb-Like Structure and Nanorod Arrays

A large quantity of Zinc oxide (ZnO) comb-like structure and high-density well-aligned ZnO nanorod arrays were prepared on silicon substrate via thermal evaporation process without any catalyst. The morphology, growth mechanism, and optical properties of the both structures were investigated using XRD, SEM, TEM and PL. The resulting comb-teeth, with a diameter about 20 nm, growing along the [0001] direction have a well-defined epitaxial relationship with the comb ribbon. The ZnO nanorod arrays have a diameter about 200 nm and length up to several micrometers growing approximately vertical to the Si substrate. A ZnO film was obtained before the nanorods growth. A growth model is proposed for interpreting the growth mechanism of comb-like zigzag-notch nanostructure. Room temperature photoluminescence measurements under excitation wavelength of 325 nm showed that the ZnO comb-like nanostructure has a weak UV emission at around 384 nm and a strong green emission around 491 nm, which correspond to a near band-edge transition and the singly ionized oxygen vacancy, respectively. In contrast, a strong and sharp UV peak and a weak green peak was obtained from the ZnO nanorod arrays.

Structural and optical properties of the three-dimensional CdS nanocone arrays on the self-assembled Cd∕CdS core-shell microspheres

The authors report on an approach to homoepitaxial growth of the three-dimensional CdS nanocone arrays, in which the Cd∕CdS core-shell sphere is designed to serve as a template. The alternation of the wurtzite (WZ) and zinc blende (ZB) phases along the growth direction of the nanocones is observed in the as-synthesized CdS nanocones. The WZ/ZB admixtures exhibit the features of a quantum well, which causes the two peaks centered at 506 and 503nm in the room-temperature photoluminescence spectrum.

Synthesis and photoluminescence properties ofIn2Ge2O7 nanobelts

Large-scale In2Ge2O7 nanobelts were successfully synthesized by a simple thermal evaporation method without the presence of catalyst. The process of growth of the ternary In2Ge2O7 nanobelts is based on the vapour?solid growth mechanism. Its morphology and microstructures were determined by scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence spectroscopy. The as-synthesized In2Ge2O7 products are single crystals with a monoclinic thortveitite-type structure growing along the [210] direction. The nanobelts have widths of 300?500?nm, thickness of 50?70?nm and lengths ranging from several tens to several hundreds of micrometres. A strong and broad violet emission peak at about 410?nm was observed in the room temperature photoluminescence measurements.

Synthesis and photoluminescence properties of In2Ge2O7nanobelts

Large-scale In2Ge2O7 nanobelts were successfully synthesized by a simple thermal evaporation method without the presence of catalyst. The process of growth of the ternary In2Ge2O7 nanobelts is based on the vapour?solid growth mechanism. Its morphology and microstructures were determined by scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence spectroscopy. The as-synthesized In2Ge2O7 products are single crystals with a monoclinic thortveitite-type structure growing along the [210] direction. The nanobelts have widths of 300?500?nm, thickness of 50?70?nm and lengths ranging from several tens to several hundreds of micrometres. A strong and broad violet emission peak at about 410?nm was observed in the room temperature photoluminescence measurements.