Songbaek Choe

A high-efficient driving isolated Drive-by-Microwave half-bridge gate driver for a GaN inverter

A compact isolated Drive-by-Microwave (DBM) half-bridge gate driver is newly developed, which can drive GaN-GITs with its constant and low power consumption of 0.9 W even a high switching frequency up to 1.0 MHz due to the gate power time sharing by using the 2.4GHz microwave wireless power transmission. The fabricated GaN isolated DBM half-bridge gate driver provides enough output gate power for GaN-GITs driving under 140 °C (Ta). Moreover, the fabricated isolated power source free GaN-GIT inverter module with the isolated DBM half-bridge gate drivers successfully demonstrated a 3-phase motor drive with high power conversion efficiency by covering from its low output.

A compact GaN Bi-directional switching diode with a GaN Bi-directional power switch and an Isolated gate driver

A compact and fast GaN bi-directional switching diode is described, which is integrated with a GaN/Si bi-directional power switch and a Drive-by-Microwave (DBM) isolated gate driver using a microwave wireless power transfer. The fabricated 600V 15A GaN bi-directional switching diode exhibits its low Ron of 160 mΩ under 85 °C ambient temperature without an external heat sink. The compact 12mm × 25.5mm × 3mm module also has a cooling pad to directly release heat from the GaN bi-directional power switch. By the fabricated module, the 1.0 MHz fast current direction switching was successfully realized with constant low power consumption of 0.8W thank to a gate power sharing technic by the DBM gate driver.