Soo-Ryong Kim
Changwon National University
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Featured researches published by Soo-Ryong Kim.
Materials Letters | 2002
Younghee Kim; Doh-Hyung Riu; Soo-Ryong Kim; Byung-Ik Kim
Abstract Shape-controlled copper oxides have been recovered from copper-containing waste etchant by neutralization with alkali hydroxide. Large amounts of copper-containing waste etchant composed of copper chloride, hydrochloric acid and water are generated from the printed circuit board (PCB) industry. In an environmental and economic point of view, the retrieval of the valuable natural resource from waste is important. In the recycling process of copper oxide from the waste etchant, reaction temperature controls the shapes and sizes of the products. Copper oxide recovered below the reaction temperature of 40 °C was of the needle shape, while copper oxide comes in a platy shape above 40 °C. As a result of the experiments, more than 99% of the copper in the waste etchant was recovered as copper oxide, and its by-products are only sodium chloride and water. Physical properties of the samples have been characterized using scanning electron microscopy (SEM), X-ray powder diffraction (XRD), thermal gravimetric analysis (TGA) and atomic absorption spectroscopy. The particle size scatters in the range of 0.5–10 μm. Shape-controlled copper oxides are expected to be promising precursors for synthesizing copper powder by reduction.
Journal of The Korean Ceramic Society | 2007
Jae-Jin Kyung; Jung-Ju Kim; Soo-Ryong Kim; Woo-Teck Kwon; Kwang-Youn Cho; Younghee Kim
Graphite is widely used in electronic industry due to its excellent electrical and thermal properties. However, graphite starts to oxidize around 400℃ that seriously degrades its properties. SiC coating can be applied to graphite foam to improve its high temperature oxidation resistance. In this research, SiC coating on graphite foam was made via preceramic polymer using a polyphenylcarbosilane. 20% of polyphenylcarbosilane in hexane solution was coated onto graphite by dip coating method. Thermal oxidation was carried out at 200℃ for crosslink of the preceramic polymer and the sample were pyrolysized at 800℃~1200℃ under nitrogen to convert the preceramic polymer to SiC film. The microstructure of the SiC coating after pyrolysis was investigated using FESEM and oxidation resistance up to 800℃ was evaluated.
Korean Journal of Materials Research | 2011
Jong Il Kim; Yoon Joo Lee; Soo-Ryong Kim; Younghee Kim; Jung-Il Kim; Chang-Hyn Woo; Doo Jin Choi
【To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at
Materials Science and Engineering: C | 2017
Yoon Joo Lee; Bo Yeon Kim; Dong-Geun Shin; Soo-Ryong Kim; Woo-Teck Kwon; Young-Hee Kim
200^{\circ}C
Journal of materials science & engineering | 2016
Yoon Joo Lee; Dong-Geun Shin; Young-Hee Kim; Woo-Teck Kwon; Soo-Ryong Kim; Doh-Hyung Riu
for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at
Korean Journal of Materials Research | 2010
Doug-Young Han; Jae-hyun Park Klepeis; Yoon Joo Lee; Jung Hyun Lee; Soo-Ryong Kim; Younghee Kim
800^{\circ}C
Key Engineering Materials | 2006
Jung-Uk Kim; Soo-Ryong Kim; K.S. Park; Jung-Ahn Lee; Byung Ik Kim; Dong Sik Bae
under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were
IEEE Transactions on Software Engineering | 2016
Yoon Joo Lee; Hyeon Myeong Lee; Young-Hee Kim; Woo-Teck Kwon; Soo-Ryong Kim; Dong-Geun Shin
2.36{\mu}m
Korean Journal of Materials Research | 2006
Hyo-Won Lee; Soo-Ryong Kim; Woo-Teck Kwon; Duckkyun Choi; Younghee Kim
and
Journal of The Korean Ceramic Society | 2002
Sang-jin Jung; Hyung-Mi Lim; Seung-In Lee; Younghee Kim; Soo-Ryong Kim; Yong-Ick Cho
3.16{\mu}m