Soo Sang Chae

Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.

We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide (ZrO(2)) dielectric with a maximum temperature of 350 °C. The formation of ZrO(2) films was investigated by TG-DTA, FT-IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H(2)O(2)). The H(2)O(2) forms peroxo groups in the ZrO(2) film producing a dense-amorphous phase and a smooth surface film. Because of these characteristics, the ZrO(2) film successfully blocked leakage current even in annealing at 300 °C. Finally, to demonstrate that the ZrO(2) film is dielectric, we fabricated thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on ZrO(2) films at 350 °C. These TFTs had a mobility of 7.21 cm(2)/(V s), a threshold voltage (V(th)) of 3.22 V, and a V(th) shift of 1.6 V under positive gate bias stress.

Boron-Doped Peroxo-Zirconium Oxide Dielectric for High-Performance, Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistor

We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO2 film. The ZrO2:B film effectively blocked the leakage current at 200 °C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 °C. The resulting mobilities were 1.25 and 39.3 cm(2)/(V s), respectively. Finally, we realized a flexible In2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 °C, and it successfully operated a switching device with a mobility of 4.01 cm(2)/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

Chemically exfoliated transition metal dichalcogenide nanosheet-based wearable thermoelectric generators

To utilize human heat energy as a permanent power source, we demonstrate, for the first time, an intrinsically highly foldable and stretchable thermoelectric generator that is based upon chemically exfoliated 1T-transition metal dichalcogenide (TMDC) nanosheets (NSs) for self-powered wearable electronics. The power factors of WS2 (n-type) and NbSe2 (p-type) NS films were evaluated to be 5–7 μ K−2 m−1 and 26–34 μW K−2 m−1, respectively, near room temperature. With these films, parallel-connected thermoelectric generators that were fabricated were able to constantly produce up to 38 nW of output power at Δ60 K. The thermoelectric device stably sustained its performance, even after 100 bending cycles and after 100 stretching cycles (50% strain). By direct observation, we found that the film is highly stretched by partial tearing and folding but still maintains an electrical percolation pathway. The morphology then is quickly recovered by a plug-in contact between the torn parts as the external strain is released. Finally, we demonstrate the electric power generation from a prototype wearable thermoelectric generator that was woven into a wristband fitted on a real human body.

Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors

Herein, we report a novel and easy strategy for fabricating solution-processed metal oxide thin-film transistors by controlling the dielectric constant of H2O through manipulation of the metal precursor solution temperature. As a result, indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated from IZO solution at 4 °C can be operated after annealing at low temperatures (∼250 °C). In contrast, IZO TFTs fabricated from IZO solutions at 25 and 60 °C must be annealed at 275 and 300 °C, respectively. We also found that IZO TFTs fabricated from the IZO precursor solution at 4 °C had the highest mobility of 12.65 cm2/(V s), whereas the IZO TFTs fabricated from IZO precursor solutions at 25 and 60 °C had field-effect mobility of 5.39 and 4.51 cm2/(V s), respectively, after annealing at 350 °C. When the IZO precursor solution is at 4 °C, metal cations such as indium (In3+) and zinc ions (Zn2+) can be fully surrounded by H2O molecules, because of the higher dielectric constant of H2O at lower temperatures. These chemical complexes in the IZO precursor solution at 4 °C are advantageous for thermal hydrolysis and condensation reactions yielding a metal oxide lattice, because of their high potential energies. The IZO TFTs fabricated from the IZO precursor solution at 4 °C had the highest mobility because of the formation of many metal-oxygen-metal (M-O-M) bonds under these conditions. In these bonds, the ns-orbitals of the metal cations overlap each other and form electron conduction pathways. Thus, the formation of a high proportion of M-O-M bonds in the IZO thin films is advantageous for electron conduction, because oxide lattices allow electrons to travel easily through the IZO.

Highly efficient inverted polymer solar cells with reduced graphene-oxide-zinc-oxide nanocomposites buffer layer

In this study, we reported a 36% improvement in the performance of inverted solar cells as a result of increased short-circuit current (JSC) obtained using a composition of zinc oxide (ZnO) and reduced graphene oxide (RGO) as an n-type buffer layer. RGO-ZnO nanocomposites show higher electron conductivity than intrinsic ZnO; moreover, they show reduced contact resistance at the interface between the active layer and n-type buffer layer. These factors prevent carrier loss resulting from defects and recombinations in the device, thereby significantly increasing the JSC value for the device. Thus, an efficiency of 4.15% was achieved for inverted solar cells with a controlled RGO-ZnO nanocomposites layer.

Vertical Alignment of Liquid Crystals with Negative Dielectric Anisotropy on an Inorganic Thin Film with a Hydrophilic Surface

The vertical alignment of liquid crystals having negative dielectric anisotropy on an amorphous silicon oxide (a-SiO(x)) thin film is the consequence of the anisotropic interaction between liquid crystals and a-SiO(x) thin films. To investigate the mechanism of the vertical alignment, we changed the physicochemical characteristics of alignment layers by controlling the composition, since the anisotropic interaction depends on the nature of both liquid crystals and an alignment layer. The variation of composition gives rise to a change in the polarizability, which is a simple measure of induced-dipole strength at the surface of the alignment layer. There is a critical transition point from planar to vertical alignment of liquid crystals, and it is the long-range van der Waals interaction that is responsible for the vertical alignment. The competition between long-range van der Waals interaction and short-range dipolar interaction were investigated and analyzed in terms of the interfacial energy between liquid crystals and an alignment layer.

Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors

We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs). The electrical property, crystallinity, and transmittance were investigated as a function of gallium content. Varying the gallium/indium ratio is found to have a significant effect on structural and electrical properties of thin films. The shrinkage of the lattice of a GIO film originates from substitution of Ga on In sites in the In2O3 lattice, which was verified by X-ray diffraction (XRD) analysis. By increasing the gallium ratio of the channel material, the GIO film shows an amorphous phase. The optimized GIO film (Ga/In= 0.35) has an electron mobility of 3.59 cm2 V-1 s-1, a threshold voltage of 0.1 V, an on/off current ratio of 8.2×107, and a subthreshold slope of 0.9 V/decade, and is highly transparent (~92%) in the visible region.

Homogeneous liquid crystal alignment on inorganic–organic hybrid silica thin films derived by the sol–gel method

We developed an inorganic–organic hybrid thin film via the sol–gel method for a new liquid crystal alignment layer and investigated the influence of an organic species on the alignment characteristics of the liquid crystals (LCs). A thin film of methyl-doped amorphous silicon oxide (a-SiOx:CH3) was fabricated from the hydrolysis and condensation reaction of the initial precursors of methyltriethoxysilane (MTES) and tetraethoxysilane (TEOS) at a proper ratio. A low-energy ion beam (IB) treatment gives rise to the homogeneous alignment of LC in an IB condition on a-SiOx:CH3 thin film; however, it is difficult to control the LC alignment on a-SiOx thin film derived only from TEOS as a precursor. The LC alignment depending on the chemical structure of the silica thin film was investigated and analyzed in terms of the sensitivity of the axis-selective destruction of the chemical bonding on the surface of the thin silica film.

Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor

We fabricate solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The solution used is prepared by precipitating metal hydroxide using NaOH and dissolving it using NH4OH. The X-ray diffraction (XRD) data of the spin-coated ZTO film demonstrates an amorphous phase, and the atomic force microscopy (AFM) image shows a smooth surface. The device performance of solution-processed TFTs was analyzed as a function of annealing temperature. The fabricated TFTs were operated in the enhancement mode, and exhibited a carrier mobility of 3.03 cm2 V-1 s-1, a threshold voltage of 10.2 V, an on/off current ratio of 1.23×107, a subthreshold slope of 0.78 V/decade, and high transparency (with ~90% transmittance) at a low annealing temperature of 300 °C.

Delicate Modification of Poly(dimethylsiloxane) Ultrathin Film by Low-Energy Ion Beam Treatment for Durable Intermediate Liquid Crystal Pretilt Angles

Long-term stability of intermediate liquid crystal pretilt angles on a poly(dimethylsiloxane) (PDMS) ultrathin film grafted onto a surface was realized simply and easily via low-energy ion beam (IB) treatment. The composition and surface energy of the thin film could be controlled by varying the low-energy IB treatment. This treatment results in the permanent chemical modification of the film surface, converting it from organic PDMS to a mixed layer of organic PDMS and inorganic silica. The partial transformation of a PDMS surface gives rise to the control of the pretilt angle via the formation of the inhomogeneous surface and the stabilization of the pretilt angle via the cross-linking reaction of broken chemical bonds through IB irradiation. As a result, a continuous variation of pretilt angles that maintained their initial value with long-term stability was obtained. Thus, the unique chemical transformation of the PDMS surface using IB treatment may allow for the production of durable intermediate liquid crystal pretilt angles.