Srikant Sridevan

High voltage vertical conduction superjunction semiconductor device

Angle implant process for cellular deep trench sidewall doping

MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance

Superjunction device with self compensated trench walls

Bidirectional shallow trench superjunction device with resurf region

Hybrid semiconductor device

Lateral conduction superjunction semiconductor device

Trench fill process

POLYSILICON FET BUILT ON SILICON CARBIDE DIODE SUBSTRATE

High power silicon carbide and silicon semiconductor device package