Srinivasan Guruvenket

Large-area, freestanding, single-layer graphene-gold: a hybrid plasmonic nanostructure.

Graphene-based plasmonic devices have recently drawn great attention. However, practical limitations in fabrication and device architectures prevent studies from being carried out on the intrinsic properties of graphene and their change by plasmonic structures. The influence of a quasi-infinite object (i.e., the substrate) on graphene, being a single sheet of carbon atoms, and the plasmonic device is overwhelming. To address this and put the intrinsic properties of the graphene-plasmonic nanostructures in focus, we fabricate large-area, freestanding, single-layer graphene-gold (LFG-Au) sandwich structures and Au nanoparticle decorated graphene (formed via thermal treatment) hybrid plasmonic nanostructures. We observed two distinct plasmonic enhancement routes of graphene unique to each structure via surface-enhanced Raman spectroscopy. The localized electronic structure variation in the LFG due to graphene-Au interaction at the nanoscale is mapped using scanning transmission X-ray microscopy. The measurements show an optical density of ∼0.007, which is the smallest experimentally determined for single-layer graphene thus far. Our results on freestanding graphene-Au plasmonic structures provide great insight for the rational design and future fabrication of graphene plasmonic hybrid nanostructures.

Atmospheric-pressure plasma-enhanced chemical vapor deposition of a-SiCN:H films: role of precursors on the film growth and properties.

Atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using Surfx Atomflow(TM) 250D APPJ was utilized to synthesize amorphous silicon carbonitride coatings using tetramethyldisilizane (TMDZ) and hexamethyldisilizane (HMDZ) as the single source precursors. The effect of precursor chemistry and substrate temperature (T(s)) on the properties of a-SiCN:H films were evaluated, while nitrogen was used as the reactive gas. Surface morphology of the films was evaluated using atomic force microscopy (AFM); chemical properties were determined using Fourier transform infrared spectroscopy (FTIR); thickness and optical properties were determined using spectroscopic ellipsometry and mechanical properties were determined using nanoindentation. In general, films deposited at substrate temperature (T(s)) < 200 °C contained organic moieties, while the films deposited at T(s) > 200 °C depicted strong Si-N and Si-CN absorption. Refractive indices (n) of the thin films showed values between 1.5 and 2.0, depending on the deposition parameters. Mechanical properties of the films determined using nanoindentation revealed that these films have hardness between 0.5 GPa and 15 GPa, depending on the T(s) value. AFM evaluation of the films showed high roughness (R(a)) values of 2-3 nm for the films grown at low T(s) (<250 °C) while the films grown at T(s) ≥ 300 °C exhibited atomically smooth surface with R(a) of ~0.5 nm. Based on the gas-phase (plasma) chemistry, precursor chemistry and the other experimental observations, a possible growth model that prevails in the AP-PECVD of a-SiCN:H thin films is proposed.

Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing

We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si(6)H(12)). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder-order transition in a bonded Si network. Our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient postprocessing to produce crystalline silicon thin films.

Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.

Synthesis of silicon quantum dots using cyclohexasilane (Si6H12)

We report a novel, ambient pressure, continuous gas-phase, synthesis of Si-QDs by direct pyrolysis of cyclohexasilane (CHS, Si6H12), a liquid hydrosilane. We also report that using a low activation energy precursor such as Si6H12 enabled effective gas-phase reduction of the hydrosilane leading to better nucleation of Si nanoparticles than other hydrosilanes. By suitably designing the reactor length and its temperature profile, the structure of the Si-QDs are rendered amorphous or crystalline. The as-synthesized Si-QDs were thermally hydrosilylated with 1-dodecene and their properties examined. High resolution transmission electron microscopic (HRTEM) analysis revealed that the nano-crystalline Si-QDs (Si-NCs) have an average size of 2.0 nm. The amorphous Si-QDs (a-Si-QDs) and the Si-NCs samples exhibited UV-Vis absorptions below 300 and 375 nm, respectively. The a-Si-QDs and Si-NCs excited at 300 nm showed PL emissions at ∼370 nm and 374 nm, respectively, while the latter showed additional characteristic emissions at 403, 425 and 457 nm. The quantum yields were determined to be 9 and 13%, respectively, with PL relaxation life times of 6.5 and 13 ns, respectively.

Atmospheric pressure chemical vapor deposition of silicon thin films using cyclohexasilane

We report the deposition of silicon thin films at high rates using atmospheric pressure chemical vapor deposition (AP-CVD) with cyclohexasilane (CHS), a liquid-hydrosilane. A precursor solution of CHS in cyclooctane was aerosolized and subsequently vaporized prior to contacting with the substrate. Using CHS, Si thin films were obtained at temperatures as low as 300°C. A deposition rate of ~50 nm/s was observed at 500°C; while good-quality Si films were realized at 400°C. Structural analysis of the films indicates a combination of amorphous and nano-crystalline Si phases, withe 2-3 orders of photoconductivity.

Atmospheric-pressure plasma deposition of indium tin oxide

Indium tin oxide (ITO) films were deposited via atmospheric-pressure plasma-enhanced chemical vapor deposition (APPD) using indium acetylacetonate, indium trifluoroacetylacetonate and tin trifluoroacetylacetonate as metal-organic precursors. A film growth temperature of 300 °C gave highly-transparent films with modest conductivity. Post-deposition thermal treatments gave ITO films with resistivities one to two orders of magnitude higher than those available commercially. Compositional analysis revealed a high carbon content and annealing the films in oxygen at 400 C did not affect the C concentration. A decrease in the fluorine content in the films was observed after annealing with and the onset of crystallization was noted via XRD.