Matthew R. Semler

Laser-Enabled Advanced Packaging of Ultrathin Bare Dice in Flexible Substrates

Embedding ultrathin semiconductor dice in flexible substrates provides unique capabilities for product designers and makes products such as smart bank cards and radio-frequency identification banknotes possible. Most of the current work in this area is directed toward handling, embedding, and interconnecting the ultrathin chips. Relatively little attention is paid to another critical process step-placing the flexible and very fragile ultrathin die onto the flexible substrate reliably and in a cost-efficient manner, suitable for high throughput assembly. The presented laser-enabled technology for embedding ultrathin dice in a flexible substrate was developed at the Center for Nanoscale Science and Engineering, North Dakota State University, Fargo, ND, to address this problem. The technology has been successfully demonstrated and proven for the fabrication of an RFID tag.

Elasticity and rigidity percolation in flexible carbon nanotube films on PDMS substrates

The evolution of wrinkles and folds in compressed thin films of type-purified single-wall carbon nanotubes (SWCNTs) on polydimethylsiloxane (PDMS) substrates is used to study the mechanical response of pristine nanotube networks. While the low-strain moduli are consistent with the exceptional mechanical properties of individual nanotubes, the films are remarkably fragile, exhibiting small yield strains that decrease with increasing thickness. We find significant differences in the mechanical response of semiconducting as compared to metallic SWCNT networks, and we use simple scaling arguments to relate these differences to previously determined Hamaker constants associated with each electronic type. A comparison with conductivity measurements performed on identical films suggests more than a two-fold variation in the onset of rigidity vs. connectivity percolation, and we discuss the potential implications of this for both rigid-rod networks and the use of type-purified SWCNTs in flexible electronics.

Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.