Stephen J. Hudgens

Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits

The high current switching characteristics of the thin-film Ovonic Threshold Switch (OTS) offer unique advantages in modern applications. This paper covers the current theoretical understanding of the OTS switching process and highlights relevant material and device data. The paper discusses various modern applications of the OTS and OTS integration as a two terminal memory select element applicable for both PCM and RRAM. Also, a novel 3 terminal OTS device is discussed as well as other OTS application as they apply to switching and logic circuits.

Low pressure microwave glow discharge process for high deposition rate amorphous silicon alloy

As glow discharge amorphous silicon alloys become more important for commercial production of photovoltaic, xerographic, optical sensing, and microelectronic devices, economic considerations have motivated considerable research aimed at increasing deposition rate and gas utilization efficiency. Recently, a low pressure microwave glow discharge process was reported (1) which produces good quality a-Si:F:H films, with essentially 100% gas utilization at deposition rates > 100A/sec.