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Dive into the research topics where Stephen J. Hudgens is active.

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Featured researches published by Stephen J. Hudgens.


Electronic Materials Letters | 2012

Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits

Wally Czubatyj; Stephen J. Hudgens

The high current switching characteristics of the thin-film Ovonic Threshold Switch (OTS) offer unique advantages in modern applications. This paper covers the current theoretical understanding of the OTS switching process and highlights relevant material and device data. The paper discusses various modern applications of the OTS and OTS integration as a two terminal memory select element applicable for both PCM and RRAM. Also, a novel 3 terminal OTS device is discussed as well as other OTS application as they apply to switching and logic circuits.


Journal of Non-crystalline Solids | 1985

Low pressure microwave glow discharge process for high deposition rate amorphous silicon alloy

Stephen J. Hudgens; Annette G. Johncock; Stanford R. Ovshinsky

As glow discharge amorphous silicon alloys become more important for commercial production of photovoltaic, xerographic, optical sensing, and microelectronic devices, economic considerations have motivated considerable research aimed at increasing deposition rate and gas utilization efficiency. Recently, a low pressure microwave glow discharge process was reported (1) which produces good quality a-Si:F:H films, with essentially 100% gas utilization at deposition rates > 100A/sec.


Archive | 1991

Electrically erasable phase change memory

Stanford R. Ovshinsky; Stephen J. Hudgens; Wolodymyr Czubatyj; David Strand; Guy C. Wicker


Archive | 1991

Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements

Stanford R. Ovshinsky; Stephen J. Hudgens; David Strand; Wolodymyr Czubatyj; J. González-Hernández; Hellmut Fritzsche; Qiuyi Ye; Sergey Kostylev; Benjamin S. Chao


Archive | 2001

Reduced area intersection between electrode and programming element

Charles H. Dennison; Guy Wicker; Tyler Lowrey; Stephen J. Hudgens; Chien Chiang; Daniel Xu


Archive | 2001

Compositionally modified resistive electrode

Tyler Lowrey; Stephen J. Hudgens; Patrick Klersy


Iete Journal of Research | 1978

Thin film field effect transistor

Stanford R. Ovshinsky; Stephen J. Hudgens


Archive | 2002

Multiple layer phase-change memory

Stephen J. Hudgens; Tyler Lowrey; Patrick Klersy


Archive | 1987

Plasma deposited coatings, and low temperature plasma method of making same

Stephen J. Hudgens; Annette G. Johncock; Stanford R. Ovshinsky; Prem Nath


Archive | 1992

Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life

Stanford R. Ovshinsky; Stephen J. Hudgens; Wolodymyr Czubatyj; David Strand; Guy C. Wicker

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Tyler Lowrey

University of Rochester

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Patrick Klersy

Energy Conversion Devices

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Prem Nath

Energy Conversion Devices

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David Strand

Energy Conversion Devices

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Guy Wicker

University of Rochester

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Lee Walter

Energy Conversion Devices

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