Stephen Kent Rockwell

Characterization and Modeling of Metal/Double-Insulator/Metal Diodes for Millimeter Wave Wireless Receiver Applications

In this paper we present measurements, models, and circuit implementations for a new low cost, thin film, metal/double-insulator/metal (MIIM) based tunneling diode technology. The device technology uses two insulators to form a tunneling device with very high speed performance capability, and is potentially compatible with many substrate technologies. This technology can potentially reduce cost, size, and improve performance for applications associated with high-speed communications, automotive collision avoidance and navigation, and homeland security weapons detection. Measured results of DC, S-parameter, and responsivity measurements in the 60 GHz band will be presented, including unmatched responsivity at 60 GHz of over 1000 V/W at -20 dBm, which is competitive with detector diodes on GaAs or Sb-based materials. ADS-compatible non-linear models are developed and demonstrated, and an envelope detector design and results is presented.

On-wafer characterization de-embedding and transmission line optimization on silicon for millimeter-wave applications

The design and implementation of transmission line based calibration standards, suitable for de-embedding on-wafer active and passive elements for millimeter-wave applications on silicon BiCMOS backend process technology, is investigated. Loss mechanisms, accuracy requirements, layout considerations, and impedance dependent characteristics of transmission line structures are discussed. The application of popular on-wafer, in situ calibration de-embedding approaches is evaluated. Methods to improve backend process technology for millimeter-wave applications are suggested, based upon transmission modeling using EM simulation tools. Modeled versus measured results are presented in support of conclusions.