Sudiksha Khadka
Ohio University
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Publication
Featured researches published by Sudiksha Khadka.
Physical Review B | 2016
Shrouq Aleithan; Maksim Y. Livshits; Sudiksha Khadka; Jeffrey J. Rack; Martin E. Kordesch; Eric Stinaff
Carrier dynamics in monolayer
Applied Physics Letters | 2017
Sudiksha Khadka; Thushan Wickramasinghe; Miles Lindquist; Ruhi Thorat; Shrouq Aleithan; Martin E. Kordesch; Eric Stinaff
\mathrm{Mo}{\mathrm{S}}_{2}
Advanced Materials Interfaces | 2017
Sudiksha Khadka; Miles Lindquist; Shrouq Aleithan; Ari N. Blumer; Thushan Wickramasinghe; Martin E. Kordesch; Eric Stinaff
have been investigated using broadband femtosecond transient absorption spectroscopy (FTAS). A tunable pump pulse was used while a broadband probe pulse revealed ground and excited state carrier dynamics. Interestingly, for pump wavelengths both resonant and nonresonant with the A and B excitons, we observe a broad ground state bleach around 2.9 eV, with decay components similar to A and B. Associating this bleach with the band nesting region between
Bulletin of the American Physical Society | 2018
Thushan Wickramasinghe; Shrouq Aleithan; Sudiksha Khadka; Ruhi Thorat; Eric Stinaff
K
Bulletin of the American Physical Society | 2018
Sudiksha Khadka; Shrouq Aleithan; Thushan Wickramasinghe; Ruhi Thorat; Eric Stinaff
and \ensuremath{\Gamma} in the band structure indicates significant k-space delocalization and overlap among excitonic wave functions identified as A, B, C, and D. Comparison of time dynamics for all features in resonance and nonresonance excitation is consistent with this finding.
Bulletin of the American Physical Society | 2017
Shrouq Aleithan; Maksim Y. Livshits; Sudiksha Khadka; Jeffrey J. Rack; Martin E. Kordesch; Eric Stinaff
Scalable fabrication of two-dimensional materials-based devices with consistent characteristics remains a significant impediment in the field. Here, we report on as-grown monolayer MoS2 metal-semiconductor-metal photodetectors produced using a CVD process which results in self-contacted two-dimensional material-based devices. The photodetectors show high responsivity (∼1 A/W) even at a low drain-source voltage (VDS) of 1.5 V and a maximum responsivity of up to 15 A/W when VDS = 4 V with an applied gate voltage of 8 V. The response time of the devices is found to be on the order of 1 μs, an order of magnitude faster than previous reports. These devices demonstrate the potential of this simple, scalable, and reproducible method for creating as-grown two-dimensional materials-based devices with broad implications for basic research and industrial applications.
Bulletin of the American Physical Society | 2017
Sudiksha Khadka; Miles Lindquists; Thushan Wickramasinghe; Ruhi Thorat; Shrouq Aleithan; Martin E. Kordesch; Eric Stinaff
Bulletin of the American Physical Society | 2017
Eric Stinaff; Sudiksha Khadka; Miles Lindquist; Shrouq Aleithan; Ari N. Blumer; Thushan Wickramasinghe; Ruhi Thorat; Martin E. Kordesch
Bulletin of the American Physical Society | 2017
Miles Lindquist; Sudiksha Khadka; Shrouq Aleithan; Ari N. Blumer; Thushan Wickramasinghe; Ruhi Thorat; Martin E. Kordesch; Eric Stinaff
Advanced Materials Interfaces | 2017
Sudiksha Khadka; Miles Lindquist; Shrouq Aleithan; Ari N. Blumer; Thushan Wickramasinghe; Martin E. Kordesch; Eric Stinaff