Suk-Won Jung

A highly sensitive and low‐noise IR photosensor based on a‐SiGe as a sensing and noise filter: Toward large‐sized touch‐screen LCD panels

— The a-SiGe TFT photosensor for embedded touch-screen panels (TSPs) was characterized by comparison with an a-Si sensor. The photoresponse of an a-SiGe sensor at a 850-nm wavelength was much higher than that of a-Si, indicating that a-SiGe is a strong candidate material for an IR sensor. In order to increase the signal-to-noise ratio, the incident visible light was filtered by incorporating a bandpass-filter layer. An a-SiGe IR-sensor-embedded LCD panel was successfully demonstrated, showing an excellent multitouch property independent of ambient-light conditions. This technology can be widely used in multifunctional TSPs.

19.1: The Most PowerEfficient 11.6” Full HD LCD Using PenTile Technology for Notebook Application

We have developed an 11.6” full high definition FHD, 1920* 1080 product with PenTile RGBW™ L6W pixel structure for notebook applications. with the increase of aperture ratio due to the reduced number of subpixels and additional white subpixel, this new product has approximately twice the brightness of comparable conventional RGB stripe products. The crosstalk that appeared when displaying a single colored pattern, which is an intrinsic problem for an even modulo subpixel repeat cell, was solved by means of a Vest feedback design. Furthermore, subpixel rendering SPR and dynamic backlight control DBLC algorithm gives us a cost effective, low power and high brightness solution.

Design of a Multifunctional Double-Active-Layer Thin-Film Transistor for Photosensing Applications

Photocurrent generation from infrared and thin-film transistor (TFT) driving properties were simultaneously achieved with a hydrogenated amorphous silicon/a-SiGe:H double-active-layer structure. The proposed double layer showed electrical performance degradation due to the large series resistance from the thick active structure. By reducing the thickness of a-SiGe:H only in the driving TFT, a compatible field-effect mobility of 0.29 cm2/V·s was achieved, which can fully drive the TFT. In the photosensor TFT, a higher photosensitivity was obtained with a thick a-SiGe:H layer. This implies that the multifunctional double active layer and new process effectively realized the two different properties at the same time.