Susanne C. Kehr

Luneburg lens in silicon photonics

The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

Near-field examination of perovskite-based superlenses and superlens-enhanced probe-object coupling

A planar slab of negative-index material works as a superlens with sub-diffraction-limited resolution, as propagating waves are focused and, moreover, evanescent waves are reconstructed in the image plane. Here we demonstrate a superlens for electric evanescent fields with low losses using perovskites in the mid-infrared regime. The combination of near-field microscopy with a tunable free-electron laser allows us to address precisely the polariton modes, which are critical for super-resolution imaging. We spectrally study the lateral and vertical distributions of evanescent waves around the image plane of such a lens, and achieve imaging resolution of λ/14 at the superlensing wavelength. Interestingly, at certain distances between the probe and sample surface, we observe a maximum of these evanescent fields. Comparisons with numerical simulations indicate that this maximum originates from an enhanced coupling between probe and object, which might be applicable for multifunctional circuits, infrared spectroscopy and thermal sensors.

Negative frequency resonant radiation

Soliton resonant radiation emission is predicted to lead to a second mode that originates from the negative frequency branch of the dispersion relation. Measurements in both bulk media and photonic crystal fibres confirm our predictions.

Plasmonic Superlensing in Doped GaAs

We demonstrate a semiconductor based broadband near-field superlens in the mid-infrared regime. Here, the Drude response of a highly doped n-GaAs layer induces a resonant enhancement of evanescent waves accompanied by a significantly improved spatial resolution at radiation wavelengths around λ = 20 μm, adjustable by changing the doping concentration. In our experiments, gold stripes below the GaAs superlens are imaged with a λ/6 subwavelength resolution by an apertureless near-field optical microscope utilizing infrared radiation from a free-electron laser. The resonant behavior of the observed superlensing effect is in excellent agreement with simulations based on the Drude-Lorentz model. Our results demonstrate a rather simple superlens implementation for infrared nanospectroscopy.

Microspectroscopy on perovskite-based superlenses [Invited]

Superlenses create sub-diffraction-limit images by reconstructing the evanescent fields arising from an object. We study the lateral, vertical, and spectral field distribution of three different perovskite-based superlenses by means of scattering-type near-field microscopy. Sub-diffraction-limit resolution is observed for all samples with an image contrast depending on losses such as scattering and absorption. For the three lenses superlensing is observed at slightly different frequencies resulting in an overall broad frequency range of 3.6 THz around 20 THz.

Quantitative determination of the charge carrier concentration of ion implanted silicon by IR-near-field spectroscopy.

We use a combination of a scattering-type near-field infrared microscope with a free-electron laser as an intense, tunable radiation source to spatially and spectrally resolve buried doped layers in silicon. To this end, boron implanted stripes in silicon are raster scanned at different wavelengths in the range from 10 to 14 µm. An analysis based on a simple Drude model for the dielectric function of the sample yields quantitatively correct values for the concentration of the activated carriers. In a control experiment at the fixed wavelength of 10.6 µm, interferometric near-field signals are recorded. The phase information gained in this experiment is fully consistent with the carrier concentration obtained in the spectrally resolved experiments.

Gold nanoparticle tips for optical field confinement in infrared scattering near-field optical microscopy

We report on the implementation of metal nanoparticles as probes for scattering and apertureless near-field optical investigations in the mid-infrared (mid-IR) spectral regime. At these wavelengths, an efficient electric-field confinement is necessary and achieved here through a gold metal nanoparticle of 80 nm in diameter (Au80-MNP) acting as the optical antenna. The Au80-MNP is attached to a standard AFM cantilever used as the spatial manipulator. When approached to a sample surface while being illuminated with an infrared beam, the Au80-MNP produces a considerably improved spatial confinement of the electric field compared to an ordinary scattering AFM tip. We demonstrate here the confinement normal to the sample surface by making use of a sample-induced phonon polariton resonance in a ferroelectric lithium niobate sample. Our experimental findings are in very good agreement with the quasistatic dipole model and show improved optical resolution via well-selected antenna particles.

Near-field resonance shifts of ferroelectric barium titanate domains upon low-temperature phase transition

Scattering scanning near-field optical microscopy (s-SNOM) has been established as an excellent tool to probe domains in ferroelectric crystals at room temperature. Here, we apply the s-SNOM possibilities to quantify low-temperature phase transitions in barium titanate single crystals by both temperature-dependent resonance spectroscopy and domain distribution imaging. The orthorhombic-to-tetragonal structural phase transition at 263 K manifests in a change of the spatial arrangement of ferroelectric domains as probed with a tunable free-electron laser. More intriguingly, the domain distribution unravels non-favored domain configurations upon sample recovery to room temperature as explainable by increased sample disorder. Ferroelectric domains and topographic influences are clearly deconvolved even at low temperatures, since complementing our s-SNOM nano-spectroscopy with piezoresponse force microscopy and topographic imaging using one and the same atomic force microscope and tip.

Characteristics of ferroelectric-ferroelastic domains in Néel-type skyrmion host GaV 4 S 8

GaV4S8 is a multiferroic semiconductor hosting Néel-type magnetic skyrmions dressed with electric polarization. At Ts = 42 K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below Ts, ferroelectric domains are formed with the electric polarization pointing along any of the four 〈111〉 axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the Néel-type skyrmion lattice emerging below TC = 13 K, the characteristics of polar domains in GaV4S8 have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV4S8 using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm–1.2 μm. Since the magnetic pattern, imaged by atomic force microscopy using a magnetically coated tip, abruptly changes at the domain boundaries, we expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manipulation of Néel-type skyrmions.

Narrow-band near-field nanoscopy in the spectral range from 1.3 to 8.5 THz

Nano-spectroscopy in the terahertz frequency range remains challenging despite recent technological progress in developing both THz emitter sources and near-field optical microscopy (SNOM). Here, we combine scattering-type SNOM with a free-electron laser light source, to tune into the 1.3–8.5 THz range. A significant portion of this range, namely, the frequencies above ∼3 THz, is not covered by previously reported near-field microscopy systems. However, it constitutes an indispensable regime where many elementary processes in solids including collective lattice excitations, charge, and spin transport occur. Our approach of nano-spectroscopy and nano-imaging provides a versatile analysis of nanostructures as small as 50 nm, hence beating the optical diffraction limit by λ/4600.