Susumu Yoshimoto
Sumitomo Electric Industries
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Publication
Featured researches published by Susumu Yoshimoto.
international symposium on power semiconductor devices and ic's | 2014
Masaki Ueno; Susumu Yoshimoto; Kuniaki Ishihara; Masaya Okada; Kazuhide Sumiyoshi; Hidenori Hirano; Fuminori Mitsuhashi; Yusuke Yoshizumi; Takashi Ishizuka; Makoto Kiyama
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.
Archive | 2005
Susumu Yoshimoto; Hideki Matsubara; Hirohisa Saitou; Takashi Misaki; Fumitake Nakanishi; Hiroki Mori
Archive | 2005
Masaki Ueno; Susumu Yoshimoto; Satoshi Matsuba
Archive | 2005
Keiichiro Tanabe; Susumu Yoshimoto
Archive | 2008
Susumu Yoshimoto; Hideki Matsubara
Archive | 2006
Katsushi Akita; Koji Katayama; Takashi Kyono; Fumitake Nakanishi; Susumu Yoshimoto; 文毅 中西; 孝史 京野; 晋 吉本; 浩二 片山; 勝史 秋田
Archive | 2015
Mitsuhiko Sakai; Susumu Yoshimoto
Archive | 2015
Mitsuhiko Sakai; Susumu Yoshimoto
Archive | 2012
Susumu Yoshimoto; Fuminori Mitsuhashi
Archive | 2005
Masaki Ueno; Susumu Yoshimoto; Satoshi Matsuba
