Szuheng Ho

Review of recent progress in multilayer solution-processed organic light-emitting diodes

Abstract. Organic light-emitting diodes (OLEDs) have become a promising candidate for lighting and display applications. High efficiency OLEDs require a multilayer device architecture to provide exciton confinement and balance charge transport. Conventional OLEDs are made by vacuum process, and the manufacturing cost can be reduced by solution processing. However, unlike vacuum-deposited OLEDs, solution-processed multilayer OLEDs are more challenging to make. The key for multilayer solution processing is to have the layer structure which can withstand solvents used in subsequent processing. We review the materials’ strategies to make multilayer solution-processed OLEDs. Specifically, we will discuss the use of cross-linkable organic materials, metal oxides, and orthogonal solvent systems to deposit various functional layers in an OLED.

Novel Patterning Method for Silver Nanowire Electrodes for Thermal-Evaporated Organic Light Emitting Diodes

UNLABELLED Silver nanowires (AgNWs) mesh has been used as transparent electrodes in optoelectronic devices. However, the lack of practical patterning techniques for the random percolating nanowire network has limited its applications in devices where a well-defined pixel is required. Here, by controlling the surface wetting properties of a polydimethylsiloxane (PDMS) release template, we are able to pattern the random AgNWs network with uniform conducting property; and due to the hydrophobic recovery nature of PDMS, a multilayer patterning and transferring process can be realized, resulting in a fine-patterned, smooth, and uniform AgNWs mesh/poly(3,4-ethylenedioxythiophene) polystyrenesulfonate ( PEDOT PSS) composite electrode. A thermal-evaporated organic light-emitting diode (OLED) is directly fabricated onto the patterned AgNWs/ PEDOT PSS composite electrode. The device shows well-defined pixel edges and a uniformly lighted pixel area. A uniform OLED with very low leakage current is realized. The enhanced efficiency compared to the controlled device with prepatterned indium tin oxide (ITO) electrode is attributed to the scattering effects of the AgNWs electrode.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.