T. Grange

Near-optimal single-photon sources in the solid state

A single photon with near-unity indistinguishability is generated from quantum dots in electrically controlled cavity structures. The cavity allows for efficient photon collection while application of an electrical bias cancels charge noise effects.

Long lifetimes of quantum-dot intersublevel transitions in the terahertz range

Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot excited-state lifetimes. For example, the population inversion required for terahertz laser operation in quantum-well-based devices (quantum-cascade lasers) is fundamentally limited by efficient scattering between the laser levels, which form a continuum in the plane of the quantum well. In this context, semiconductor quantum dots are a highly attractive alternative for terahertz devices, because of their intrinsic discrete energy levels. Here, we present the first measurements, and theoretical description, of the intersublevel carrier relaxation in quantum dots for transition energies in the few terahertz range. Long intradot relaxation times (1.5 ns) are found for level separations of 14 meV (3.4 THz), decreasing very strongly to approximately 2 ps at 30 meV (7 THz), in very good agreement with our microscopic theory of the carrier relaxation process. Our studies pave the way for quantum-dot terahertz device development, providing the fundamental knowledge of carrier relaxation times required for optimum device design.

Polaron relaxation in self-assembled quantum dots: Breakdown of the semiclassical model

We calculate the lifetime of conduction band excited states in self-assembled quantum dots by taking into account LO-phonon-electron interaction and various anharmonic phonon couplings. We show that polaron relaxation cannot be accurately described by a semiclassical model. The contributions of different anharmonic decay channels are shown to depend strongly on the polaron energy. We calculate the energy dependence of the polaron lifetime and compare our results to available experimental measurements of polaron decay time in InAs/GaAs quantum dots.

Scalable performance in solid-state single-photon sources

The desiderata for an ideal photon source are high brightness, high single-photon purity, and high indistinguishability. Defining brightness at the first collection lens, these properties have been simultaneously demonstrated with solid-state sources; however, absolute source efficiencies remain close to the 1% level and indistinguishability has only been demonstrated for photons emitted consecutively on the few-nanoseconds scale. Here, we employ deterministic quantum dot-micropillar devices to demonstrate solid-state single-photon sources with scalable performances. In one device, an absolute brightness at the output of a single-mode fiber of 14% and purities of 97.1%–99.0% are demonstrated. When nonresontantly excited, it emits a long stream of photons that exhibit indistinguishability up to 70%—above the classical limit of 50%—even after 33 consecutively emitted photons with a 400 ns separation between them. Resonant excitation in other devices results in near-optimal indistinguishability values: 96% at short timescales, remaining at 88% in timescales as large as 463 ns after 39 emitted photons. The performance attained by our devices brings solid-state sources into a regime suitable for scalable implementations.

Homogeneous Array of Nanowire-Embedded Quantum Light Emitters

The potential for scale-up coupled with minimized system size is likely to be a major determining factor in the realization of applicable quantum information systems. Nanofabrication technology utilizing the III-V semiconductor system provides a path to scalable quantum bit (qubit) integration and a materials platform with combined electronic/photonic functionality. Here, we address the key requirement of qubit-site and emission energy control for scale-up by demonstrating uniform arrays of III-V nanowires, where each nanowire contains a single quantum dot. Optical studies of single nanowire quantum dots reveal narrow linewidth exciton and biexciton emission and clear state-filling at higher powers. Individual nanowire quantum dots are shown to emit nonclassically with clear evidence of photon antibunching. A model is developed to explain unexpectedly large excited state separations as revealed by photoluminescence emission spectra. From measurements of more than 40 nanowire quantum dots, we find emission energies with an ensemble broadening of 15 meV. The combination of deterministic site control and the narrow distribution in ensemble emission energy results in a system readily capable of scaling for multiqubit quantum information applications.

Coherent manipulation of a solid-state artificial atom with few photons

In a quantum network based on atoms and photons, a single atom should control the photon state and, reciprocally, a single photon should allow the coherent manipulation of the atom. Both operations require controlling the atom environment and developing efficient atom–photon interfaces, for instance by coupling the natural or artificial atom to cavities. So far, much attention has been drown on manipulating the light field with atomic transitions, recently at the few-photon limit. Here we report on the reciprocal operation and demonstrate the coherent manipulation of an artificial atom by few photons. We study a quantum dot-cavity system with a record cooperativity of 13. Incident photons interact with the atom with probability 0.95, which radiates back in the cavity mode with probability 0.96. Inversion of the atomic transition is achieved for 3.8 photons on average, showing that our artificial atom performs as if fully isolated from the solid-state environment.

Intersublevel polaron dephasing in self-assembled quantum dots

Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy conduction band transition due to coherent acoustic phonon generation. The subsequent single exponential decay yields long intraband dephasing times of 90 ps. We find excellent agreement between our measured and calculated FWM dynamics, and show that both real and virtual acoustic phonon processes are necessary to explain the temperature dependence of the polarization decay. PACS numbers: 78.67.Hc, 78.47.+p, 42.50.Md, 71.38.-k The strong spatial confinement of carriers in semiconductor quantum dots (QDs) leads to striking differences in the carrier-phonon interaction compared with systems of higher dimensionality. In particular, the discrete energy level s tructure in QDs results in long exciton and electron dephasing times [1, 2, 3, 4], making these semiconductor nanostructures highly attractive for implementation in quantum information processing applications. The study of dephasing mechanisms in QDs is commonly carried out using transient four wave mixing (FWM) spectroscopy. Using resonant interband excitation, FWM measurements have revealed the absorption lineshape of single QDs to consist of a narrow zero phonon line (ZPL) and an acoustic phonon-related broadband centred at the same energy. The only intraband FWM study [5] involved resonant excitation of high energy transitions in th e valence band of p-doped QDs yielding dephasing times ∼ 15 ps. However it was not possible to determine the dephasing mechanisms in this case. Intraband studies of the well-resolved lowest energy conduction band electron transitions in InAs/GaAs QDs have provided deep insight into the electron-phonon interaction and carrier relaxation processes in n-doped samples. Clear evidence of strong coupling between electrons and phonons, resulting in polaron formation, has been demonstrated using magneto-transmission measurements [6]. Ultrafast studies [7, 8] of polaron decay have shown that the previously assumed ’phonon bottleneck’ picture is not valid. Compared with semiconductor quantum wells, the intraband population relaxation time in QDs is long (∼ 50 ps) suggesting relatively long dephasing times. However there have been no reports of direct dephasing measurements to date. In the present letter we present the first investigations of i ntraband dephasing in n-doped QDs using degenerate FWM. Our calculations of the absorption lineshape in this case sh ow marked differences in comparison with the interband absorption [9]. The intraband lineshape consists of peaked acoustic phonon sidebands separated by ∼ 1.5 meV from the ZPL, which corresponds to phonons with wavelength close to the dot size, and is reminiscent of the lineshape associated wit h impurity-bound electron transitions [10]. Using pulse durations short enough to excite both the ZPL and acoustic phonon sidebands we find damped oscillations in the FWM signal, indicative of coherent acoustic phonon generation, followed by a single exponential decay. In contrast with the interband case, where the origin of the strong temperature dependence of the excitonic linewidth is still subject to debate, the simple 3 -level structure of the lowest energy conduction band states in InAs QDs permits an accurate simulation of the temperature dependence of the FWM signal. The excellent agreement found between experiment and theory, shows that virtual transitions between the p-states is the dominant dephasing mechanism at high temperature. At low temperature, we have measured an intersublevel dephasing time of T2 ∼ 90 ps. It is also interesting to compare our results with previous intraband dephasing measurements in higher dimensional (quantum well) systems [11]. Here phonon-mediated processes are not significant with the intraband dephasing instead determined by electronelectron interactions, yielding typical dephasing times ∼ 0.3 ps which are approximately 2 orders of magnitude faster than for the QD samples studied here. The relatively long intraband dephasing time in QDs is key to the efficient operation of new types of mid-infrared QD-based devices, such as intersublevel polaron lasers [12] and may be relevant for potential device applications such as qubits for quantum information processors [13]. The investigated samples were grown on (100) GaAs substrates by molecular beam epitaxy in the Stranski-Krastranow mode. They comprise 80 layers of InAs self-assembled QDs separated by 50 nm wide GaAs barriers, thus preventing both structural and electronic coupling between QD layers. The polaron transitions were studied between s-like ground (s) and p-like first excited ( p) states within the conduction band. To populate the s state, the samples were delta-doped with Si 2 nm below each QD layer. The doping density was controlled in such a way that the average doping did not exceed 1 electron per dot (see Ref. [14] for more details). Absorp

Cavity-funneled generation of indistinguishable single photons from strongly dissipative quantum emitters.

We investigate theoretically the generation of indistinguishable single photons from a strongly dissipative quantum system placed inside an optical cavity. The degree of indistinguishability of photons emitted by the cavity is calculated as a function of the emitter-cavity coupling strength and the cavity linewidth. For a quantum emitter subject to strong pure dephasing, our calculations reveal that an unconventional regime of high indistinguishability can be reached for moderate emitter-cavity coupling strengths and high-quality factor cavities. In this regime, the broad spectrum of the dissipative quantum system is funneled into the narrow line shape of the cavity. The associated efficiency is found to greatly surpass spectral filtering effects. Our findings open the path towards on-chip scalable indistinguishable-photon-emitting devices operating at room temperature.

Cavity-enhanced two-photon interference using remote quantum dot sources

This work was partially supported by the ERC Starting Grant No. 277885 QD-CQED, the French RENATECH network, the Labex NanoSaclay, the CHISTERA project SSQN, and the EU FP7 Grant No. 618078 (WASPS). C.A. acknowledges financial support from the Spanish FPU scholarship

Tunable cavity coupling of the zero phonon line of a nitrogen-vacancy defect in diamond

© 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate the tunable enhancement of the zero phonon line of a single nitrogen-vacancy colour centre in diamond at cryogenic temperature. An open cavity fabricated using focused ion beam milling provides mode volumes as small as 1.24 μm3 (4.7 ) and quality factor In situ tuning of the cavity resonance is achieved with piezoelectric actuators. At optimal coupling to a TEM00 cavity mode, the signal from individual zero phonon line transitions is enhanced by a factor of 6.25 and the overall emission rate of the NV- centre is increased by 40% compared with that measured from the same centre in the absence of cavity field confinement. This result represents a step forward in the realisation of efficient spin-photon interfaces and scalable quantum computing using optically addressable solid state spin qubits.