T. Shirata

Characterization of transparent conducting CuI thin films prepared by pulse laser deposition technique

Abstract Thin films of CuI were prepared by pulse laser deposition technique and their characteristics are studied. These films exhibited optical transmittance over 80% in the wavelength range 400–900 nm and minimum resistivity of about 2 K Ω cm. Blue shift in the onset of optical absorption of the CuI films is observed to that of polycrystalline powder of CuI.

An approach for utilization of organic polymer as a sensitizer in solid-state cells

A solid-state cell was fabricated by sandwiching poly[2-methoxy-5(2 0 -ethyl-hexyloxy)-pphenylene vinylene] (MEH-PPV) in between micro-porous n-TiO2 and p-CuI films. The photo-excited polymer is found inject electrons into the conduction band of n-TiO2 and holes into the valance band of p-CuI. Maximum open-circuit voltage of 400 mV and short-circuit current of about 0.3 mA cm � 2 were observed for the TiO2|MEH-PPV|CuI cell, under white light illumination (100 mW cm � 2 ). r 2002 Elsevier Science B.V. All rights reserved.

Properties of Pulsed-Laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO2|Dye|CuI Solid-State Photovoltaic Solar Cells

Transparent semiconducting copper iodide (CuI) films were deposited by pulsed laser deposition and their characteristics were investigated. In this paper, the structural and optoelectrical properties of CuI thin films and the construction of dye-sensitized TiO2|Dye|CuI solid-state photovoltaic solar cells are reported. The optical absorption of these films shows a remarkable blue shift compared to that of polycrystalline CuI, which can be explained by the formation of ultrafine CuI grains. The CuI films exhibited an optical transmittance of over 80% in wavelengths ranging from 400 to 900 nm and a minimum resistivity of approximately 2 K??cm. The properties of pulsed-laser-deposited CuI in the power output of n-TiO2|Dye|p-CuI cells is studied. An efficient charge generation is observed through the illumination of the TiO2 layer of the fabricated n-TiO2|Dye|p-CuI cells. The cell performance has been characterized base on the current?voltage (I?V) working curve determined under AM 1.5 illumination conditions (100 mW/cm2, 25?C). The maximum short-circuit photocurrent density (Jsc) of approximately 12.2 mA/cm2 and open-circuit photovoltage (Voc) of approximately 480 mV were obtained for the TiO2|Dye|CuI solid-state photovoltaic solar cells with good reproducibility. The fill factor (FF) and power conversion efficiency (?) were about 47.8% and 2.8%, respectively.

Optical Band Gap Excitation And Photoelectron Generation In Titanium Dioxide-Based Solid State Solar Cells

The properties and optical band gap excitation of nanoporous titanium dioxide (TiO2) and transparent semiconducting copper iodide (CuI) films prepared by a XeCl excimer laser were investigated. The CuI films exhibited optical transmittance over 80% in the wavelength range from 400 to 900 nm with minimum resistivity of about 2 KΩcm. The optical absorption of these films showed a remarkable blue shift compared to that of polycrystalline of CuI, which can be explained from the formation of ultra fine of CuI grains. The properties of pulsed laser deposited CuI and TiO2 in power output of p-CuI|dye|n-TiO2 cells were studied. The photoelectron generation and mechanism in fabricated p-CuI|dye|n-TiO2 cells were also studied. An efficient charge generation was observed through the illumination of the TiO2 layer of the fabricated p-CuI|dye|n-TiO2 cells. The band gap excitation of TiO2 was observed only under illumination through TiO2 layer. The adsorbed dye molecules to the TiO2 surface act as a relay, especially under illumination through TiO2 layer in the wave range region of 300–400 nm.

Annealing temperature effects on synthesis of n-TiO2/dye/p-CuI solid-state solar cells

The effects of annealing temperature on the properties of titanium dioxide (TiO2) films for the fabrication of dye-sensitized solid-state photovoltaic solar cells using XeCl excimer pulsed laser-deposited copper iodide (CuI) thin films, n-TiO2|dye|p-CuI cells have been studied. An efficient enhancement of incident photon-to-current conversion efficiency (IPCE) charge generation is observed by illumination through the TiO2 layer of the fabricated n-TiO2|dye|p-CuI cells. Dye molecules adsorbed on the TiO2 surface act as a relay, particularly under illumination through the TiO2 layer in the wavelength range of 300–400 nm. The cell performances are shown by in the current–voltage (I–V) working curves under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The n-TiO2|dye|p-CuI solid-state photovoltaic solar cell fabricated using TiO2 films annealed at 450°C for 6 h shows maximum short circuit current density (Jsc) of approximately 12.2 mA/cm2 and an open circuit voltage (Voc) of approximately 480 mV with good reproducibility. The fill factor and power conversion efficiency were about 47.8% and 2.8%, respectively.

Characterization of transparent CuI films and charge generation in dye-sensitized CuI|Dye|TiO/sub 2/ solar cells

Transparent semiconducting copper iodide (CuI) films were prepared by XeCl excimer laser and their characteristics are investigated. These films exhibited optical transmittance over 80% in the wavelength range from 400 to 900 nm and minimum resistivity of about 2 K/spl Omega/cm/sup -1/. The optical absorption of the these films shows a remarkable blue shift compared to that of polycrystalline of CuI, which can be explained from the viewpoint formation of ultra fine of CuI grains. The properties of pulsed laser deposited Cul in power output of p-CuI|Dye|n-TiO/sub 2/ cells is studied. An efficient charge generation is observed through the illumination of TiO/sub 2/ layer of the fabricated p-CuI|Dye|n-TiO/sub 2/ cells.