T. W. Noh

Novel Jeff=1/2 Mott state induced by relativistic spin-orbit coupling in Sr2IrO4.

We investigated the electronic structure of 5d transition-metal oxide Sr2IrO4 using angle-resolved photoemission, optical conductivity, x-ray absorption measurements, and first-principles band calculations. The system was found to be well described by novel effective total angular momentum Jeff states, in which the relativistic spin-orbit coupling is fully taken into account under a large crystal field. Despite delocalized Ir 5d states, the Jeff states form such narrow bands that even a small correlation energy leads to the Jeff=1/2 Mott ground state with unique electronic and magnetic behaviors, suggesting a new class of Jeff quantum spin driven correlated-electron phenomena.

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.

Occurrence of both unipolar memory and threshold resistance switching in a NiO film.

We observed two types of reversible resistance switching (RS) effects in a NiO film: memory RS at low temperature and threshold RS at high temperature. We were able to control the type of RS effects by thermal cycling. These phenomena were explained using a new dynamic percolation model that can describe the rupture and formation of conducting filaments. We showed that the RS effects are governed by the thermal stability of the filaments, which arise from competition between Joule heating and thermal dissipation. This work provides us understandings on basic mechanism of the RS effects and their interrelation.

Polarization Relaxation Induced by a Depolarization Field in Ultrathin Ferroelectric BaTiO~3 Capacitors

Time-dependent polarization relaxation behavior induced by a depolarization field E(d) was investigated on high-quality ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors. The E(d) values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large E(d) inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than the critical thickness issue.

Dimensionality-controlled insulator-metal transition and correlated metallic state in 5d transition metal oxides Sr n+1Ir nO3n+1 (n=1, 2, and infinity).

We investigated the electronic structures of the 5d Ruddlesden-Popper series Sr n+1Ir nO3n+1 (n=1, 2, and infinity) using optical spectroscopy and first-principles calculations. As 5d orbitals are spatially more extended than 3d or 4d orbitals, it has been widely accepted that correlation effects are minimal in 5d compounds. However, we observed a Mott insulator-metal transition with a change of bandwidth as we increased n. In addition, the artificially synthesized perovskite SrIrO3 showed a very large mass enhancement of about 6, indicating that it was in a correlated metallic state.

Critical thickness of ultrathin ferroelectric BaTiO3 films

To investigate the critical thickness of ferroelectric BaTiO3 (BTO) films, we fabricated fully strained SrRuO3∕BTO∕SrRuO3 heterostructures on SrTiO3 substrates by pulsed laser deposition with in situ reflection high-energy electron diffraction. We varied the BTO layer thickness from 3to30nm. By fabricating 10×10μm2 capacitors, we could observe polarization versus electric-field hysteresis loops, which demonstrate the existence of ferroelectricity in BTO layers thicker than 5nm. This observation provides an experimental upper bound of 5nm for the critical thickness. The BTO thickness-dependent scaling of the remanent polarization agrees with the predictions of recent first-principle simulations [J. Junquera and P. Ghosez, Nature 422, 506 (2003)].

Bandwidth-Controlled Insulator-Metal Transition and Correlated Metallic State in 5

We investigated the electronic structures of the 5d Ruddlesden-Popper series Sr n+1Ir nO3n+1 (n=1, 2, and infinity) using optical spectroscopy and first-principles calculations. As 5d orbitals are spatially more extended than 3d or 4d orbitals, it has been widely accepted that correlation effects are minimal in 5d compounds. However, we observed a Mott insulator-metal transition with a change of bandwidth as we increased n. In addition, the artificially synthesized perovskite SrIrO3 showed a very large mass enhancement of about 6, indicating that it was in a correlated metallic state.

d

We fabricated Pt∕NiO∕Pt capacitor structures with various bottom electrode thicknesses tBE and investigated their resistance switching behaviors. The capacitors with tBE⩾50nm exhibited typical unipolar resistance memory switching, while those with tBE⩽30nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.

Transition Metal Oxides Sr

Asymmetric polarization switching of Pb(Zr,Ti)O3 (PZT) thin films with different electrode configuration has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 and/or LaCoO3 (LCO) have been used as an electrode. Polarization-voltage (P-V) hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 V and 0.12 V, respectively.

_{n+1}

We investigated domain kinetics by measuring the polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr,Ti)O3 films, which are widely used in ferroelectric memories. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of logarithmic domain-switching times. We suggested that the local field variation due to dipole defects at domain pinning sites could explain the Lorentzian distribution.