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Featured researches published by Tadahiro Matsuzaki.


SID Symposium Digest of Technical Papers | 2004

54.1: A Low-Power SOG LCD with Integrated DACs and a DC-DC Converter for Mobile Applications

Yoshihiro Nonaka; Hiroshi Haga; Hiroshi Tsuchi; Youichi Kitagishi; Tadahiro Matsuzaki; Mitsuhiro Sugimoto; Hiroshi Hayama; Hideki Asada

A low-power 262k-color SOG (System-On-Glass) LCD has been developed for mobile applications. It is integrated with a DC-DC converter and driver circuits that contain 6- bit DACs, and it consumes less than 5 mW in operations with a single voltage power supply of 2.5 V.


Journal of The Society for Information Display | 2005

A 470 × 235-ppi poly-Si TFT-LCD for high-resolution 2-D and 3-D autostereoscopic displays

Shinichi Uehara; Naoyasu Ikeda; Nobuaki Takanashi; Masao Iriguchi; Mitsuhiro Sugimoto; Tadahiro Matsuzaki; Hideki Asada

— We have developed a 470 × 235-ppi poly-Si TFT-LCD with a novel pixel arrangement, called HDDP (horizontally double-density pixels), for high-resolution 2-D and 3-D autostereoscopic displays. 3-D image quality is especially high in a lenticular-lens-equipped 3-D mode because both the horizontal and vertical resolutions are high, and because these resolutions are equal. 3-D and 2-D images can be displayed simultaneously in the same picture. In addition, 3-D images can be displayed anywhere and 2-D characters can be made to appear at different depths with perfect legibility. No switching of 2-D/3-D modes is necessary, and the designs thin and uncomplicated structure makes it especially suitable for mobile terminals.


SID Symposium Digest of Technical Papers | 2005

24.4: A 510-Kb SOG-DRAM for Frame-Memory-Integrated Displays

Hiroshi Haga; Yoshihiro Nonaka; Youichi Kitagishi; Youichiro Kamon; Tadahiro Matsuzaki; Yoshinobu Sato; Hideki Asada; Tomohiko Otose; Daigo Sasaki

A system-on-glass (SOG) DRAM intended for integrated frame-memories of 262k-color QCIF+ displays has been developed. An integrated codec circuit reduces the number of memory cells and layout area by a factor of 2/3. By combining the SOG-DRAM, which has a data retention time of over 16.6 ms, with an embedded controller that enables simultaneous access for writing and reading, a frame-memory has been created. The operation was verified by chip measurement and demonstration.


Journal of The Society for Information Display | 2006

A 510-kb SOG-DRAM for mobile displays with embedded frame memories

H. Haga; Y. Nonaka; Y. Kamon; T. Otose; D. Sasaki; Y. Kitagishi; Tadahiro Matsuzaki; Y. Sato; Hideki Asada

— A system-on-glass (SOG) dynamic random access memory (DRAM), which enables the implementation of frame-memory-integrated displays, has been developed. A dynamic one-transistor-one-capacitor memory cell, which has a data retention time of over 16.6 msec, and a compression/decompression (CODEC) circuit were developed to reduce the layout area and power. The CODEC enables an 18-bit/pixel color display, while reducing the memory capacity from 18 to 12 bits/pixel. A frame-memory macro was created by combining the SOG-DRAM with an embedded controller that enables independent access for writing and reading. Its operation was verified by chip measurement and demonstration as a frame-memory operation of 262k-color QCIF+ displays. The work reported in this paper was the first step to creating a Zero-Chip Display with an integrated frame memory, and it proved the concept was feasible.


Archive | 1998

Process for production of field-emission cold cathode

Nobuya Seko; Tadahiro Matsuzaki


Archive | 2004

Thin film transistor substrate and method of manufacture

Kenichi Hayashi; Hirofumi Shimamoto; Tadahiro Matsuzaki


Archive | 1997

Field emission cold cathode with buried insulator layer

Naruaki Takada; Yoshino Tomihari; Tadahiro Matsuzaki


Archive | 2003

Thin film transistor substrate and its manufacturing method

Kenichi Hayashi; Tadahiro Matsuzaki; Hirofumi Shimamoto; 浩文 嶋本; 忠弘 松崎; 健一 林


Archive | 2005

Thin-film transistor array substrate and liquid crystal display device

Tadahiro Matsuzaki; Kenji Sera


Archive | 2006

Transistor with electrode-protecting insulating film

Shigeru Mori; Takahiro Korenari; Tadahiro Matsuzaki; Hiroshi Tanabe

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