Tadashi Tomikawa
Sumitomo Electric Industries
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Featured researches published by Tadashi Tomikawa.
Applied Physics Letters | 1994
Takashi Tsuno; Tadashi Tomikawa; Shin-Ichi Shikata; Takahiro Imai; Naoji Fujimori
Diamond homoepitaxial films were grown on an off‐angle (001) substrate with a misorientation of 4.3° toward the [110] direction by microwave plasma‐assisted chemical vapor deposition from a methane‐hydrogen gas mixture. The single domain 2×1 surface was observed by low‐energy electron diffraction (LEED) and scanning tunneling microscopy, after growth with methane concentration of 2%. With a methane concentration of 6%, the LEED superstructure spot intensity from another domain increased, suggesting a higher rate of two‐dimensional nucleation.
Journal of Applied Physics | 1994
Takashi Tsuno; Tadashi Tomikawa; Shin-Ichi Shikata; Naoji Fujimori
Epitaxial films were grown on diamond(111) substrates by microwave‐plasma‐assisted chemical vapor deposition, and their surfaces were studied by scanning tunneling microscope (STM). STM images with atomic order resolution were obtained, and showed 1×1 periodicity, which was also observed by low‐energy electron diffraction. 〈112〉 single bilayer steps, 〈112〉 single bilayer steps, and 〈112〉 double bilayer steps were observed, and the majority of the steps were found to be of the first type. Steps were found to be very straight in the atomic scale, and there were suggestions of the incorporation of carbon atoms at the kinks. Even a small island with a nanometer order size showed a triangular shape surrounded by three 〈112〉 single bilayer steps.
Japanese Journal of Applied Physics | 1993
Tadashi Tomikawa; Shinichi Shikata
Diamond thin films grown from low-pressure methane-hydrogen gas mixture utilizing microwave plasma-enhanced chemical vapor deposition (CVD) on sintered polycrystalline cubic boron nitride (c-BN) substrates were examined by conventional and high-resolution transmission electron microscopy (TEM) techniques and also by the selected-area transmission electron diffraction (SATED) technique. On different planes of c-BN, such as (311), (310) and (211), epitaxial growth of diamond films was confirmed. The dislocations correspond to the mismatching of the lattice constants of diamond and c-BN were observed. One dislocation appeared per 82 to 84 diamond lattice planes. Due to the small grain size of the c-BN polycrystalline substrate, other defects, such as micro-twins, slips and stacking faults, were not observed at the interfaces in this investigation.
Archive | 1991
Tadashi Tomikawa; Nobuhiko Fujita; Shyoji Nakagama; Akira Nakayama
Archive | 1990
Tsunenobu Kimoto; Tadashi Tomikawa; Nobuhiko Fujita
Archive | 1990
Tunenobu Kimoto; Tadashi Tomikawa; Nobuhiko Fujita
Archive | 1996
Hiromu Shiomi; Yoshiki Nishibayashi; Tadashi Tomikawa; Shin-Ichi Shikata
Archive | 2004
Tadashi Tomikawa; Shigeki Yamane; Tomoki Yokkaichi Kano; Tsuyoshi Yokkaichi Hosokawa
Archive | 1993
Yoshiki Nishibayashi; Tadashi Tomikawa; Shin-Ichi Shikata
Archive | 1992
Tunenobu Kimoto; Tadashi Tomikawa; Shoji Nakagama; Masayuki Ishii; Nobuhiko Fujita