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2014 20th International Conference on Ion Implantation Technology (IIT) | 2014

SAion - SEN's unique solution for 450mm ion implant

Noriyuki Suetsugu; Mitsukuni Tsukihara; Mitsuaki Kabasawa; Fumiaki Sato; Takanori Yagita

The SAion-450 is a leading-edge ion implanter developed for the upcoming 450mm wafer generation. The SAion-450 has extremely wide process coverage and productivity throughout both the medium current (MC) and high current (HC) process ranges. Although the area of a 450mm wafer is 2.25 times larger than that of a 300mm wafer, the SAion-450 can process typical MC recipes with higher productivity than the current 300mm MC implanter, the MC3-II/GP. Additionally, low energy (LE) productivity can be significantly enhanced with the addition of the LE beam line option. This can be easily installed (or removed) in a production fab. The SAion product line also includes a 300mm model. The SAion-300 is equipped with the same beamline as the SAion-450 in order to deliver the same process characteristics in 300mm fabs as in 450mm wafer lines. Thus, the SAion series can serve as a bridge tool to assure smooth wafer size transition from 300mm to 450mm.


2016 21st International Conference on Ion Implantation Technology (IIT) | 2016

A Beam Quality Control Method in SAion Ion Implanter

Shiro Ninomiya; Takanori Yagita; Kazuhisa Ishibasi; Noriyuki Suetsugu; Mitsuaki Kabasawa

The SAion is a leading-edge ion implanter developed for the upcoming generation. The SAion has extremely wide process coverage and high productivity throughout both the medium current (MC) and high current (HC) process ranges. In this paper, beam quality control method introduced for the SAion will be discussed. In order to carry out beam quality control, methods both to measure beam quality very precisely and to control beam quality very precisely must be satisfied simultaneously. These two technical elements have been developed and adopted in the SAion. A movable beam profiler has a beamangle measurement function in very high accuracy. A beam angle is measured very precisely at the wafer position. Based on the measurement, beam divergence control with extremely wide beam current coverage also can be carried out.


Archive | 2008

Beam processing apparatus

Mitsukuni Tsukihara; Mitsuaki Kabasawa; Hiroshi Matsushita; Takanori Yagita; Yoshitaka Amano; Yoshito Fujii


Archive | 2007

Beam processing system and beam processing method

Takanori Yagita; Hisaki Izutani; Mitsukuni Tsukihara; Takashi Kuroda


Archive | 2005

Beam space-charge compensation device and ion implantation system having the same

Hiroshi Kawaguchi; Takanori Yagita; Takashi Nishi; Junichi Murakami; Mitsukuni Tsukihara; Mitsuaki Kabasawa


Archive | 2005

Irradiation system with ion beam/charged particle beam

Takanori Yagita; Takashi Nishi; Michiro Sugitani; Junichi Murakami; Mitsukuni Tsukihara; Mitsuaki Kabasawa; Masaki Ishikawa; Tetsuya Kudo


Archive | 2013

Ion implantation apparatus and control method thereof

Hiroyuki Kariya; Masaki Ishikawa; Yoshiaki Inda; Takeshi Kurose; Takanori Yagita; Toshio Yumiyama


Archive | 2008

Ion Implantation Apparatus and Method of Converging/Shaping Ion Beam Used Therefor

Mitsukuni Tsukihara; Takanori Yagita; Yoshitaka Amano; Mitsuaki Kabasawa


Archive | 2015

ION IMPLANTATION APPARATUS, FINAL ENERGY FILTER, AND ION IMPLANTATION METHOD

Takanori Yagita


Archive | 2014

ION IMPLANTATION APPARATUS, BEAM PARALLELIZING APPARATUS, AND ION IMPLANTATION METHOD

Takanori Yagita; Mitsuaki Kabasawa; Haruka Sasaki

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Masaki Ishikawa

Sumitomo Heavy Industries

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Haruka Sasaki

Sumitomo Heavy Industries

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Hiroyuki Kariya

Sumitomo Heavy Industries

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Shiro Ninomiya

Sumitomo Heavy Industries

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